Due to the wide application of ceramics in electronic device packaging,the performance of ceramic metallization layer directly determines the performance of the whole package device.This paper introduces the main prep...Due to the wide application of ceramics in electronic device packaging,the performance of ceramic metallization layer directly determines the performance of the whole package device.This paper introduces the main preparation methods of ceramic metallization,discusses the influence of Mo powder size,metallization formula,sintering temperature and other factors on the performance of ceramic metallization layer prepared by activated Mo-Mn method,and introduces several kinds of methods that can be tested to test the performance of ceramic metallized sealing samples.A new research direction of Ceramic Metallization Technology in the advanced field is put forward.展开更多
Using newly developed Cu58Ni12Ti30 alloy as brazing filler metal, this paper has carried out the joining wxperiments of Si3N4 and the joint shength tests at room temperature.The joint brazed at 1,293K for 10 min exhib...Using newly developed Cu58Ni12Ti30 alloy as brazing filler metal, this paper has carried out the joining wxperiments of Si3N4 and the joint shength tests at room temperature.The joint brazed at 1,293K for 10 min exhibited the maximum strength value of 157.2 MPa.The microstructures of the joint cross-section were observed and the elements area distributions on the interface were examined by means of scanning electron microscope with X-ray wave-dispersion spectrometer.The phases formed in the joint were determined by X-ray diffraction analysis method.The results showed that during the brazing process the active element Ti diffused to the interfaces and reacted with Si3N4,resulted in forming the reaction products TiN NiTiSi, and Ti4Si3(or TiSi)on the interfaces.Some effects on the trend to produce these compounds were attempted to explain from α thermodynalic point of view.展开更多
基金The authors are grateful to National Science Foundation of China(51602347)Hunan Natural Science Foundation(2019JJ50282)for financial support.The authors are also grateful to Aid Program for Innovative Group of National University of Defense Technology and Aid Program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province.
文摘Due to the wide application of ceramics in electronic device packaging,the performance of ceramic metallization layer directly determines the performance of the whole package device.This paper introduces the main preparation methods of ceramic metallization,discusses the influence of Mo powder size,metallization formula,sintering temperature and other factors on the performance of ceramic metallization layer prepared by activated Mo-Mn method,and introduces several kinds of methods that can be tested to test the performance of ceramic metallized sealing samples.A new research direction of Ceramic Metallization Technology in the advanced field is put forward.
文摘Using newly developed Cu58Ni12Ti30 alloy as brazing filler metal, this paper has carried out the joining wxperiments of Si3N4 and the joint shength tests at room temperature.The joint brazed at 1,293K for 10 min exhibited the maximum strength value of 157.2 MPa.The microstructures of the joint cross-section were observed and the elements area distributions on the interface were examined by means of scanning electron microscope with X-ray wave-dispersion spectrometer.The phases formed in the joint were determined by X-ray diffraction analysis method.The results showed that during the brazing process the active element Ti diffused to the interfaces and reacted with Si3N4,resulted in forming the reaction products TiN NiTiSi, and Ti4Si3(or TiSi)on the interfaces.Some effects on the trend to produce these compounds were attempted to explain from α thermodynalic point of view.
