A single-ended 10-bit 200 kS/s 607 μ W SAR ADC with an auto-zeroing offset cancellation technique

Thispaperpresentsasingle-ended8-channel 10-bit200kS/s 607 #W synchronous successiveapproxi- mation register （SAR） analog-to-digital converter （ADC） using HLMC 55 nm low leakage （LL） CMOS technology with a 3.3 V/1.2 V supply voltage. In conventional binary-encoded SAR ADCs the total capacitance grows expo- nentially with resolution. In this paper a CR hybrid DAC is adopted to reduce both capacitance and core area. The capacitor array resolves 4 bits and the other 6 bits are resolved by the resistor array. The 10-bit data is acquired by thermometer encoding to reduce the probability of DNL errors which are typically present in binary weighted architectures. This paper uses an auto-zeroing offset cancellation technique that can reduce the offset to 0.286 mV. The prototype chip realized the 10-bit SAR ADC fabricated in HLMC 55 nm CMOS technology with a core area of 167 × 87 μm2. It shows a sampling rate of 200 kS/s and low power dissipation of 607/μW operates at a 3.3 V analog supply voltage and a 1.2 V digital supply voltage. At the input frequency of 10 kHz the signal-to-noise-and- distortion ratio （SNDR） is 60.1 dB and the spurious-free dynamic range （SFDR） is 68.1 dB. The measured DNL is ±0.37/-0.06 LSB and INL is ±0.58/-0.22 LSB.

A novel analog/digital reconfigurable automatic gain control with a novel DC offset cancellation circuit

An analog/digital reconfigurable automatic gain control （AGC） circuit with a novel DC offset cancel- lation circuit for a direct-conversion receiver is presented. The AGC is analog/digital reconfigurable in order to be compatible with different baseband chips. What＇s more, a novel DC offset cancellation （DCOC） circuit with an HPCF （high pass cutoff frequency） less than 10 kHz is proposed. The AGC is fabricated by a 0.18μm CMOS process. Under analog control mode, the AGC achieves a 70 dB dynamic range with a 3 dB-bandwidth larger than 60 MHz. Under digital control mode, through a 5-bit digital control word, the AGC shows a 64 dB gain control range by 2 dB each step with a gain error of less than 0.3 dB. The DC offset cancellation circuits can suppress the output DC offset voltage to be less than 1.5 mV, while the offset voltage of 40 mV is introduced into the input. The overall power consumption is less than 3.5 mA, and the die area is 800 ×300μm2.

CMOS linear-in-dB VGA with DC offset cancellation for direct-conversion receivers

A low-power high-linearity linear-in-dB variable gain amplifier（VGA） with novel DC offset calibration loop for direct-conversion receiver（DCR） is proposed.The proposed VGA uses the differential-ramp based technique,a digitally programmable gain amplifier（PGA） can be converted to an analog controlled dB-linear VGA. An operational amplifier（OPAMP） utilizing an improved Miller compensation approach is adopted in this VGA design.The proposed VGA shows a 57 dB linear range.The DC offset cancellation（DCOC） loop is based on a continuous-time feedback that includes the Miller effect and a linear range operation MOS transistor to realize high-value capacitors and resistors to solve the DC offset problem,respectively.The proposed approach requires no external components and demonstrates excellent DCOC capability in measurement.Fabricated using SMIC 0.13μm CMOS technology,this VGA dissipates 4.5 mW from a 1.2 V supply voltage while occupying 0.58 mm^2 of chip area including bondpads.In addition,the DCOC circuit shows 500 Hz high pass cutoff frequency（HPCF） and the measured residual DC offset at the output of VGA is less than 2 mV.

Robust power-on reset circuit with brown-out detection

An on-chip power-on reset circuit with a brown-out detection capability is implemented in a 0. 18 μm CMOS. A pF-order capacitor is charged with a proportional-to-absolute-temperature （PTAT） current from a bandgap reference with limited loop bandwidth and slow start-up feature, to generate a reset signal with high robustness and wide-range supply rise time. An embedded brown- out detector based on complementary voltage-to-current （V-to-I） conversion and current comparison can accurately respond to the brown-out event with high robustness over process and temperature when the supply is lower than 1.5 V and the brown-out duration is longer than 0. 1 ms. The presented design with embedded offset voltage cancellation consumes a quiescent current of 8. 5 μA from a 1. 8 V supply and works over ambient temperature of -40° to 120°.

An integrated front-end vertical hall magnetic sensor fabricated in 0.18μm low-voltage CMOS technology

An integrated front-end vertical CMOS Hall magnetic sensor is proposed for the in-plane magnetic field measure-ment.To improve the magnetic sensitivity and to obtain low offset,a fully symmetric vertical Hall device(FSVHD)has been op-timized with a minimum size design.A new four-phase spinning current modulation associated with a correlated double sampling(CDS)demodulation technique has been further applied to compensate for the offset and also to provide a linear Hall output voltage.The vertical Hall sensor chip has been manufactured in a 0.18μm low-voltage CMOS technology and it occu-pies an area of 1.54 mm2.The experimental results show in the magnetic field range from-200 to 200 mT,the entire vertical Hall sensor performs with the linearity of 99.9%and the system magnetic sensitivity of 1.22 V/T and the residual offset of 60μT.Meanwhile,it consumes 4.5 mW at a 3.3 V supply voltage.The proposed vertical Hall sensor is very suitable for the low-cost sys-tem-on-chip(SOC)implementation of 2D or 3D magnetic microsystems.

A programmable gain amplifier with digitally assisted DC offset calibration for a direct-conversion WLAN receiver

This paper presents a programmable gain amplifier（PGA） circuit with a digitally assisted DC offset cancellation（DCOC） scheme for a direct conversion WLAN receiver.Implemented in a standard 0.13-μm CMOS process,the PGA occupies 0.39 mm2 die area and dissipates 6.5 mW power from a 1.2 V power supply.By using a single loop single digital-to-analog converter（DAC） mixed signal DC offset cancellation topology,the minimum DCOC settling time achieved is as short as 1.6μs with the PGA gain ranging from -8 to 54 dB in a 2 dB step.The DCOC loop utilizes a segmented DAC structure to lower the design complexity without sacrificing accuracy and a digital control algorithm to dynamically set the DCOC loop to fast or normal response mode,making the PGA circuit in compliance with the targeted WLAN specifications.

A low-power 10-bit 250-KSPS cyclic ADC with offset and mismatch correction

A low power 10-bit 250-k sample per second （KSPS） cyclic analog to digital converter （ADC） is presented. The ADC＇s offset errors are successfully cancelled out through the proper choice of a capacitor switching sequence. The improved redundant signed digit algorithm used in the ADC can tolerate high levels of the comparator＇s offset errors and switched capacitor mismatch errors. With this structure, it has the advantages of simple circuit configuration, small chip area and low power dissipation. The cyclic ADC manufactured with the Chartered 0.35 μm 2P4M process shows a 58.5 dB signal to noise and distortion ratio and a 9.4 bit effective number of bits at a 250 KSPS sample rate. It dissipates 0.72 mW with a 3.3 V power supply and occupies dimensions of 0.42 × 0.68 mm2.

A 10-bit column-parallel cyclic ADC for high-speed CMOS image sensors

This paper presents a high-speed column-parallel cyclic analog-to-digital converter（ADC） for a CMOS image sensor.A correlated double sampling（CDS） circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise（FPN） effectively.One single channel ADC with an area less than 0.02 mm^2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.

A baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness

This paper proposes a baseband circuit for wake-up receivers with double-mode detection and enhanced sensitivity robustness for use in the electronic toll collection system.A double-mode detection method,including amplitude detection and frequency detection,is proposed to reject interference and reduce false wake-ups.An improved closed-loop band-pass filter and a DC offset cancellation technique are also newly introduced to enhance the sensitivity robustness.The circuit is fabricated in TSMC 0.18μm 3.3 V CMOS technology with an area of 0.12 mm2.Measurement results show that the sensitivity is -54.5 dBm with only a±0.95 dBm variation from the 1.8 to 3.3 V power supply,and that the temperature variation of the sensitivity is±1.4 dBm from -50 to 100℃. The current consumption is 1.4 to 1.7μA under a 1.8 to 3.3 V power supply.

A 10-bit 100-MS/s CMOS pipelined folding A/D converter

This paper presents a 10-bit 100-MSample/s analog-to-digital （A/D） converter with pipelined folding architecture. The linearity is improved by using an offset cancellation technique and a resistive averaging interpolation network. Cascading alleviates the wide bandwidth requirement of the folding amplifier and distributed interstage track/hold amplifiers are used to realize the pipeline technique for obtaining high resolution. In SMIC 0.18 μm CMOS, the A/D converter is measured as follows： the peak integral nonlinearity and differential nonlin- earity are 4-0.48 LSB and 4-0.33 LSB, respectively. Input range is 1.0 Vp-p with a 2.29 mm2 active area. At 20 MHz input @ 100 MHz sample clock, 9.59 effective number of bits, 59.5 dB of the signal-to-noise-and-distortion ratio and 82.49 dB of the spurious-free dynamic range are achieved. The dissipation power is only 95 mW with a 1.8 V power supply.

A high dynamic range linear RF power detector with a preceding LNA

A design of high dynamic range linear radio frequency power detector （PD）, aimed for transmitter carrier leakage suppression is presented in this paper. Based on the logarithmic amplifier principle, this detector utilizes the successive detection method to achieve a high dynamic range in the radio frequency band. In order to increase sensitivity, a low noise amplifier （LNA） is placed in the front of this detector. DC coupling is adopted in this architecture to reduce parasitics and save area, but this will unavoidably cause DC offsets in the circuit which are detrimental to the dynamic range. So a DC offset cancelling （DCOC） technique is proposed to solve the problem. Finally, this detector was fabricated in the SMIC 0.13μm CMOS process. The measured results show that it achieves a wide dynamic range of 50 dB/40 dB with log errors in 4-1 dB at 900 MHz/2 GHz, while draws 16 mA from a 1.5 V power supply. The active chip area is 0.27×0.67 mm2.