High linearity and low noise column readout chain are two key factors in CMOS image sensor.However,offset mismatch and charge sharing always exist in the conventional column wise readout implementation,even adopting t...High linearity and low noise column readout chain are two key factors in CMOS image sensor.However,offset mismatch and charge sharing always exist in the conventional column wise readout implementation,even adopting the technology of correlated double sample.A simple column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor is proposed in this paper.Based on the bottom plate sampling and fixed common level method,this novel design can avoid the offset nonuniformity between the two buffers.Also,the single buffer and switched capacitor technique can effectively suppress the charge sharing caused by the varied operating point.The proposed approach is experimentally verified in a 1024×1024 prototype chip designed and fabricated in 55 nm low power CMOS process.The measurement results show that the linear range is extended by 20%,the readout noise of bright and dark fields is reduced by 40%and 30%respectively,and the improved photo response nonuniformity is up to 1.16%.Finally,a raw sample image taken by the prototype sensor shows the excellent practical performance.展开更多
设计一种用于高速高精度流水线ADC的流水线ADC子级电路,采用伪随机序列控制子ADC电路中比较器阵列的参考比较电压。比较器的高低位被随机分配,消除某个比较器的固有失调对子ADC量化的影响,温度计码的伪随机性可以消除MDAC电容的失配误...设计一种用于高速高精度流水线ADC的流水线ADC子级电路,采用伪随机序列控制子ADC电路中比较器阵列的参考比较电压。比较器的高低位被随机分配,消除某个比较器的固有失调对子ADC量化的影响,温度计码的伪随机性可以消除MDAC电容的失配误差对余量输出的影响。电路采用0.18μm 1P5M 1.8 V CMOS工艺,运用于12 bit 250 Msample/s流水线ADC电路中,实际测得流水线ADC电路的SNR为69.92 dB,SFDR为81.17 dB。展开更多
基金supported by Shaanxi Education Department (No. 19JC029)
文摘High linearity and low noise column readout chain are two key factors in CMOS image sensor.However,offset mismatch and charge sharing always exist in the conventional column wise readout implementation,even adopting the technology of correlated double sample.A simple column readout circuit with improved offset mismatch and charge sharing for CMOS image sensor is proposed in this paper.Based on the bottom plate sampling and fixed common level method,this novel design can avoid the offset nonuniformity between the two buffers.Also,the single buffer and switched capacitor technique can effectively suppress the charge sharing caused by the varied operating point.The proposed approach is experimentally verified in a 1024×1024 prototype chip designed and fabricated in 55 nm low power CMOS process.The measurement results show that the linear range is extended by 20%,the readout noise of bright and dark fields is reduced by 40%and 30%respectively,and the improved photo response nonuniformity is up to 1.16%.Finally,a raw sample image taken by the prototype sensor shows the excellent practical performance.
文摘设计一种用于高速高精度流水线ADC的流水线ADC子级电路,采用伪随机序列控制子ADC电路中比较器阵列的参考比较电压。比较器的高低位被随机分配,消除某个比较器的固有失调对子ADC量化的影响,温度计码的伪随机性可以消除MDAC电容的失配误差对余量输出的影响。电路采用0.18μm 1P5M 1.8 V CMOS工艺,运用于12 bit 250 Msample/s流水线ADC电路中,实际测得流水线ADC电路的SNR为69.92 dB,SFDR为81.17 dB。
