Thin-film flexible solar cells are lightweight and mechanically robust.Along with rapidly advancing battery technology,flexible solar panels are expected to create niche products that require lightweight,mechanical fl...Thin-film flexible solar cells are lightweight and mechanically robust.Along with rapidly advancing battery technology,flexible solar panels are expected to create niche products that require lightweight,mechanical flexibility,and moldability into complex shapes,such as roof-panel for electric automobiles,foldable umbrellas,camping tents,etc.In this paper,we provide a comprehensive assessment of relevant materials suitable for making flexible solar cells.Substrate materials reviewed include metals,ceramics,glasses,and plastics.For active materials,we focus primarily on emerging new semiconductors including small organic donor/acceptor molecules,conjugated donor/acceptor polymers,and organometal halide perovskites.For electrode materials,transparent conducting oxides,thin metal films/nanowires,nanocarbons,and conducting polymers are reviewed.We also discuss the merits,weaknesses,and future perspectives of these materials for developing next-generation flexible photovoltaics.展开更多
This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-Si...This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.展开更多
Solar cells are now widely used as a clean method for electric energy generation. Among various type of solar cells, we compared the ability between amorphous and tandem (amorphous and polycrystalline) silicon solar c...Solar cells are now widely used as a clean method for electric energy generation. Among various type of solar cells, we compared the ability between amorphous and tandem (amorphous and polycrystalline) silicon solar cells by means of simultaneous running test. This kind of comparison is of importance practically, because the comparison of only inherent characteristics cannot include environmental parameters such as temperature totally. It was concluded that both types of solar cells provided almost the same energy for one year. The amorphous silicon solar cell provided more energy in summer while the tandem solar cell was advantageous in winter. It is due to the fact that the decrease in energy conversion at the higher cell temperature is more noticeable in tandem solar cells.展开更多
Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the prod...Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.展开更多
Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-...Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the overstrong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap (Es) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.展开更多
We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction st...We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.展开更多
Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer′s thickness of emitter layer. The highest of Vo...Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer′s thickness of emitter layer. The highest of Voc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the Voc of 549.8 mV, Jsc of 32.19 mA·cm-2 and the cell′s area of 1 cm2.展开更多
Poly[decaphenylcyclopentasilane] (PDPS)-based photovoltaic cells were fabricated by using mixture solution of PDPS including boron and phosphorous elements. A doping effect of phosphorus and boron into PDPS was invest...Poly[decaphenylcyclopentasilane] (PDPS)-based photovoltaic cells were fabricated by using mixture solution of PDPS including boron and phosphorous elements. A doping effect of phosphorus and boron into PDPS was investigated on the performance of the photovoltaic devices. The solar cell provided short-circuit current density of 0.11 mA/cm2 and open-circuit voltage of 0.81 V under simulated sunlight. Microstructural analysis indicated that PDPS had an amor-phous structure, which would result in the photovoltaic properties.展开更多
The application of a p~+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID program.The differences between p~+-p-i-n configura...The application of a p~+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID program.The differences between p~+-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out.The effects of dopant concentration, thickness of p~+-layer,contact barrier height and defect density on solar cells are analyzed.Our results indicate that solar cells with a p~+-p-i-n configuration have a better performance.The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p~+ layer and lowering the front contact barrier height.The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.展开更多
Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost,less material consumption and easy mass production.Among them,micro-crystalline Si and Ge based thin film solar cel...Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost,less material consumption and easy mass production.Among them,micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers.Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber.In this work,w e designed a nd simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet,green,red as well as near infrared range,respectively.B y tuning the G e content,the record efficiency of 24.80%has been realized with the typical quadruple junction structure of a-Si:H/a-Si0.9Ge0.1:H/μc-Si:H/μc-Si0.5Ge0.5:H.To further reduce the material cost,thickness dependent device performances have been conducted.It can be found that the design of total thickness of 4μm is the optimal device design in balancing the thickness a nd the PCE.While the design of ultrathin quadruple junction device with total thickness of 2μm is the optimized device design regarding cost and long-term stability with a little bit more reduction in PCE.These results indicated that our solar cells combine the advantages of low cost and high stability.Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.展开更多
This work deals with the design evaluation and influence of absorber doping for aSi:H/aSiC:H/a SiGe:H based thinfilm solar cells using a twodimensional computer aided design (TCAD) tool. Various physical paramete...This work deals with the design evaluation and influence of absorber doping for aSi:H/aSiC:H/a SiGe:H based thinfilm solar cells using a twodimensional computer aided design (TCAD) tool. Various physical parameters of the layered structure, such as doping and thickness of the absorber layer, have been studied. For reliable device simulation with realistic predictability, the device performance is evaluated by implementing nec essary models (e.g., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction, SchokleyRead Hall recombination model, Auger recombination model, bandgap narrowing ef fects, doping and temperature dependent mobility model and using FermiDirac statistics). A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption. Similarly, a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top aSi and bottom aSiGe component cells. A moderate ndoping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the Voc (and fill factor) of the device.展开更多
基金Z.H.Lu would like to acknowledge the Natural Science and Engineering Research Council of Canada,and the National Natural Science Foundation of China(Grant No.11774304)for providing research fund.H.Y.Yu would like to acknowledge the financial support by Research and Application of Key Technologies of GaN-based Power Devices on Si Substrate(Grant No:2019B010128001)Research on key technologies for optimization of IoT chips and product development(Grant No.2019B010142001)+1 种基金and Study and optimization of electrostatic discharge mechanism for GaN HEMT devices(Grant No:JCYJ20180305180619573)Research of AlGaN HEMT MEMS sensor for work in extreme environment(Grant No:JCYJ20170412153356899).
文摘Thin-film flexible solar cells are lightweight and mechanically robust.Along with rapidly advancing battery technology,flexible solar panels are expected to create niche products that require lightweight,mechanical flexibility,and moldability into complex shapes,such as roof-panel for electric automobiles,foldable umbrellas,camping tents,etc.In this paper,we provide a comprehensive assessment of relevant materials suitable for making flexible solar cells.Substrate materials reviewed include metals,ceramics,glasses,and plastics.For active materials,we focus primarily on emerging new semiconductors including small organic donor/acceptor molecules,conjugated donor/acceptor polymers,and organometal halide perovskites.For electrode materials,transparent conducting oxides,thin metal films/nanowires,nanocarbons,and conducting polymers are reviewed.We also discuss the merits,weaknesses,and future perspectives of these materials for developing next-generation flexible photovoltaics.
基金Project supported by the National High Technology Research and Development Program of China (Grant No. 2009AA05Z422), the National Basic Research Program of China (Grant Nos. 2011CBA00705, 2011CBA00706, and 2011CBA00707), and the Natural Science Foundation of Tianjin (Grant No. 08JCZDJC22200).
文摘This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125℃. We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p-~SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions.
文摘Solar cells are now widely used as a clean method for electric energy generation. Among various type of solar cells, we compared the ability between amorphous and tandem (amorphous and polycrystalline) silicon solar cells by means of simultaneous running test. This kind of comparison is of importance practically, because the comparison of only inherent characteristics cannot include environmental parameters such as temperature totally. It was concluded that both types of solar cells provided almost the same energy for one year. The amorphous silicon solar cell provided more energy in summer while the tandem solar cell was advantageous in winter. It is due to the fact that the decrease in energy conversion at the higher cell temperature is more noticeable in tandem solar cells.
基金The work has been supported by the Science and Engineering Research Board(SERB),Department of Science and Technology(SR/FTP/PS-175/2012)。
文摘Reactive sputtered boron-doped zinc oxide(BZO) film was deposited from argon,hydrogen and boron gas mixture.The reactive sputtering technique provides us the flexibility of changing the boron concentration in the produced films by using the same intrinsic zinc oxide target.Textured surface was obtained in the as-deposited films.The surface morphology and the opto-electronic properties of the films can be controlled by simply varying the gas concentration ratio.By varying the gas concentration ratio,the best obtained resistivity ~6.51×10^-4Ω-cm,mobility ~19.05 cm^2 V^-1 s^-1 and sheet resistance ~7.23Ω/□ were obtained.At lower wavelength of light,the response of the deposited films improves with the increase of boron in the gas mixture and the overall transmission in the wavelength region 350-1100 nm of all the films are>85 %.We also fabricated amorphous silicon(a-Si) thin film solar cell on the best obtained BZO layers.The overall efficiency of the a-Si solar cell is 8.14 %,found on optimized BZO layer.
基金Acknowledgements This work is supported by the National Natural Science Foundation of China (Grant Nos. 11104319, 11274346, 51202285, 61234005, 51172268 and 51402347), the Solar Energy Action Plan of the Chinese Academy of Sciences (Grant Nos. Y1YT064001, Y1YF034001 and Y2YF014001), and Sci. & Tech. Commission Project of Beijing Municipality (Grant No. Z 151100003515003).
文摘Interdigitated back contact-heterojunction (IBC-HJ) solar cells can have a conversion efficiency of over 25%. However, the front surface passivation and structure have a great influence on the properties of the IBC-HJ solar cell. In this paper, detailed numerical simulations have been performed to investigate the potential of front surface field (FSF) offered by stack of n-type doped and intrinsic amorphous silicon (a-Si) layers on the front surface of IBC-HJ solar cells. Simulations results clearly indicate that the electric field of FSF should be strong enough to repel minority carries and cumulate major carriers near the front surface. However, the overstrong electric field tends to drive electrons into a-Si layer, leading to severe recombination loss. The n-type doped amorphous silicon (n-a-Si) layer has been optimized in terms of doping level and thickness. The optimized intrinsic amorphous silicon (i-a-Si) layer should be as thin as possible with an energy band gap (Es) larger than 1.4 eV. In addition, the simulations concerning interface defects strongly suggest that FSF is essential when the front surface is not passivated perfectly. Without FSF, the IBC-HJ solar cells may become more sensitive to interface defect density.
基金supported by the Hi-Tech Research and Development Program of China (Grant Nos. 2007AA05Z436 and 2009AA050602)the Science and Technology Support Project of Tianjin (Grant No. 08ZCKFGX03500)+2 种基金the National Natural Science Foundation of China (Grant No. 60976051)the International Cooperation Project between China–Greece Government (GrantNo. 2009DFA62580)the Program for New Century Excellent Talents in University of China (NCET-08-0295)
文摘We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO2 or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.
基金This project was financially supported by the National Science Foundation of Beijing, China (No.04D063)
文摘Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer′s thickness of emitter layer. The highest of Voc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the Voc of 549.8 mV, Jsc of 32.19 mA·cm-2 and the cell′s area of 1 cm2.
文摘Poly[decaphenylcyclopentasilane] (PDPS)-based photovoltaic cells were fabricated by using mixture solution of PDPS including boron and phosphorous elements. A doping effect of phosphorus and boron into PDPS was investigated on the performance of the photovoltaic devices. The solar cell provided short-circuit current density of 0.11 mA/cm2 and open-circuit voltage of 0.81 V under simulated sunlight. Microstructural analysis indicated that PDPS had an amor-phous structure, which would result in the photovoltaic properties.
基金supported by the Key Programs for Science and Technology Development of Jiangsu,China(Nos.BE20080030,BE2009028)the Qing Lan Project,China(No.2008-04)the Jiangsu"333"Project,China(No.201041)
文摘The application of a p~+/p configuration in the window layer of hydrogenated amorphous silicon thin film solar cells is simulated and analyzed utilizing an AMPS-ID program.The differences between p~+-p-i-n configuration solar cells and p-i-n configuration solar cells are pointed out.The effects of dopant concentration, thickness of p~+-layer,contact barrier height and defect density on solar cells are analyzed.Our results indicate that solar cells with a p~+-p-i-n configuration have a better performance.The open circuit voltage and short circuit current were improved by increasing the dopant concentration of the p~+ layer and lowering the front contact barrier height.The defect density at the p/i interface which exceeds two orders of magnitude in the intrinsic layer will deteriorate the cell property.
基金the National Natural Science Foundation of China(Grant No.51772049)the Jilin Scientific and Technological Development Program,China(Grant No.20170520159JH)+5 种基金the Thirteenth Five-Year'Scientific and Technological Research Project of the Education Department of Jilin Province,China(Grant No.JJKH20190705IG)the project of Jilin Development and Reform Commission(Grant No.2019C042)The authors also show their gratitude to the National Natural Science Foundation of China(Grant No.51802116)the Natural Science Foundation of Shandong Province(No.ZR2019BE M040)Jinbo Pang acknowledges the National Key Research and Development Program of China(Grant No.2017YFE0102700)from the Ministry of Science and Technology(MOST)of China and the Key Research and Development program of Shandong Province(Major Innovation Project of Science and Technology of Shandong Province)(No.2018YFJH0503)the University of Jinan for the Scientific Research Starting Funds.
文摘Thin film solar cells have been proved the next generation photovoltaic devices due to their low cost,less material consumption and easy mass production.Among them,micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiency and ultrathin absorber layers.Yet individual junction devices are limited in photoelectric conversion efficiency because of the restricted solar spectrum range for its specific absorber.In this work,w e designed a nd simulated a multi-junction solar cell with its four sub-cells selectively absorbing the full solar spectrum including the ultraviolet,green,red as well as near infrared range,respectively.B y tuning the G e content,the record efficiency of 24.80%has been realized with the typical quadruple junction structure of a-Si:H/a-Si0.9Ge0.1:H/μc-Si:H/μc-Si0.5Ge0.5:H.To further reduce the material cost,thickness dependent device performances have been conducted.It can be found that the design of total thickness of 4μm is the optimal device design in balancing the thickness a nd the PCE.While the design of ultrathin quadruple junction device with total thickness of 2μm is the optimized device design regarding cost and long-term stability with a little bit more reduction in PCE.These results indicated that our solar cells combine the advantages of low cost and high stability.Our work may provide a general guidance rule of utilizing the full solar spectrum for developing high efficiency and ultrathin multi-junction solar cells.
文摘This work deals with the design evaluation and influence of absorber doping for aSi:H/aSiC:H/a SiGe:H based thinfilm solar cells using a twodimensional computer aided design (TCAD) tool. Various physical parameters of the layered structure, such as doping and thickness of the absorber layer, have been studied. For reliable device simulation with realistic predictability, the device performance is evaluated by implementing nec essary models (e.g., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction, SchokleyRead Hall recombination model, Auger recombination model, bandgap narrowing ef fects, doping and temperature dependent mobility model and using FermiDirac statistics). A single absorber with a graded design gives an efficiency of 10.1% for 800 nm thick multiband absorption. Similarly, a tandem design shows an efficiency of 10.4% with a total absorber of thickness of 800 nm at a bandgap of 1.75 eV and 1.0 eV for the top aSi and bottom aSiGe component cells. A moderate ndoping in the absorber helps to improve the efficiency while p doping in the absorber degrades efficiency due to a decrease in the Voc (and fill factor) of the device.