This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al...This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.展开更多
The microwave radiation method was introduced to prepare the Fe_2O_3/SO solid superacid.Its structure and properties were investigated by means of X-ray diffraction and infrared spectrum analyses as well as measuremen...The microwave radiation method was introduced to prepare the Fe_2O_3/SO solid superacid.Its structure and properties were investigated by means of X-ray diffraction and infrared spectrum analyses as well as measurement of magnetic susceptibility and rate of esterification. The structure of the superacids prepared in microwave field can be crystalline or non-crystalline, the latter has not been reported yet in literatures. Comparing with the traditional superacid, the non-crystalline Fe2O3/SO superacid prepared in microwave field has the highest magnetic susceptibility and catalytic activity. The di-coordination of Fe2O3 and SO and the S=O bi-bond were reinforced by microwave radiation, which is favorable for increasing the acid intensity of the Fe2O3/SO catalyst展开更多
Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are cr...Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.展开更多
In this paper,the functional polymeric active materials were prepared by the grafting copolymerization and their structure and properties were studied.The results show that the structure and properties of these ac- ti...In this paper,the functional polymeric active materials were prepared by the grafting copolymerization and their structure and properties were studied.The results show that the structure and properties of these ac- tive materials have the relative large effects on the properties of gadolinium ion selective electrodes.展开更多
In GaN-based green light-emitting diodes（LEDs） with different green quantum well numbers grown on Si（111）substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits ap...In GaN-based green light-emitting diodes（LEDs） with different green quantum well numbers grown on Si（111）substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.展开更多
We perform comprehensive density functional theory calculations of strain effect on electronic structure of black phosphorus（BP） and on BP nanoribbons. Both uniaxial and biaxial strain are applied, and the dramatic ...We perform comprehensive density functional theory calculations of strain effect on electronic structure of black phosphorus（BP） and on BP nanoribbons. Both uniaxial and biaxial strain are applied, and the dramatic change of BP＇s band structure is observed. Under 0-8% uniaxial strain, the band gap can be modulated in the range of 0.55-1.06 eV, and a direct-indirect band gap transition causes strain over 4% in the y direction. Under 0-8% biaxial strain, the band gap can be modulated in the range of 0.35-1.09 eV, and the band gap maintains directly.Applying strain to BP nanoribbon, the band gap value reduces or enlarges markedly either zigzag nanoribbon or armchair nanoribbon. Analyzing the orbital composition and using a tight-binding model we ascribe this band gap behavior to the competition between effects of different bond lengths on band gap. These results would enhance our understanding on strain effects on properties of BP and phosphorene nanoribbon.展开更多
基金This work is supported by the National Natural Srience Foundation of China(No.69876025 and No.60076006)Science and Technology Committee of Shandong Province and the Natural Science Foundation of Shandong Province.
文摘This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r f sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with resistivities in the range from 4.1×10-3to 5.3×104 Ωcm, carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on substrate temperature during film fabrication.
文摘The microwave radiation method was introduced to prepare the Fe_2O_3/SO solid superacid.Its structure and properties were investigated by means of X-ray diffraction and infrared spectrum analyses as well as measurement of magnetic susceptibility and rate of esterification. The structure of the superacids prepared in microwave field can be crystalline or non-crystalline, the latter has not been reported yet in literatures. Comparing with the traditional superacid, the non-crystalline Fe2O3/SO superacid prepared in microwave field has the highest magnetic susceptibility and catalytic activity. The di-coordination of Fe2O3 and SO and the S=O bi-bond were reinforced by microwave radiation, which is favorable for increasing the acid intensity of the Fe2O3/SO catalyst
基金Supported by the National Natural Science Foundation of China under Grant No 11374114
文摘Ta-doped titanium dioxide films are deposited on fused quartz substrates using the rf magnetron sputtering technique at different substrate temperatures. After post-annealing at 550℃ in a vacuum, all the films are crystallized into the polycrystalline anatase TiO2 structure. The effects of substrate temperature from room temperature up to 350℃ on the structure, morphology, and photoelectric properties of Ta-doped titanium dioxide films are analyzed. The average transmittance in the visible region（400-800 nm） of all films is more than 73%.The resistivity decreases firstly and then increases moderately with the increasing substrate temperature. The polycrystalline film deposited at 150℃ exhibits a lowest resistivity of 7.7 × 10^-4Ω·cm with the highest carrier density of 1.1×10^21 cm^-3 and the Hall mobility of 7.4 cm^2·V^-1s^-1.
文摘In this paper,the functional polymeric active materials were prepared by the grafting copolymerization and their structure and properties were studied.The results show that the structure and properties of these ac- tive materials have the relative large effects on the properties of gadolinium ion selective electrodes.
基金Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400601the National Natural Science Foundation of China under Grant Nos 61704069,11674147,61604066,51602141 and 11604137
文摘In GaN-based green light-emitting diodes（LEDs） with different green quantum well numbers grown on Si（111）substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7.
基金Supported by the National Natural Science Foundation of China under Grant Nos 51572219 and 11447030the Natural Science Foundation of Shaanxi Province of China under Grant Nos 2014JM2-1008 and 2015JM1018the State Key Laboratory of Transient Optics and Photonics Technology 2015 Annual Open Fund under Grant No SKLST200915
文摘We perform comprehensive density functional theory calculations of strain effect on electronic structure of black phosphorus（BP） and on BP nanoribbons. Both uniaxial and biaxial strain are applied, and the dramatic change of BP＇s band structure is observed. Under 0-8% uniaxial strain, the band gap can be modulated in the range of 0.55-1.06 eV, and a direct-indirect band gap transition causes strain over 4% in the y direction. Under 0-8% biaxial strain, the band gap can be modulated in the range of 0.35-1.09 eV, and the band gap maintains directly.Applying strain to BP nanoribbon, the band gap value reduces or enlarges markedly either zigzag nanoribbon or armchair nanoribbon. Analyzing the orbital composition and using a tight-binding model we ascribe this band gap behavior to the competition between effects of different bond lengths on band gap. These results would enhance our understanding on strain effects on properties of BP and phosphorene nanoribbon.
