Photoic crystal nanobeam cavity devices for on-chip integrated silicon photonics

Integrated circuit(IC)industry has fully considered the fact that the Moore’s Law is slowing down or ending.Alternative solutions are highly and urgently desired to break the physical size limits in the More-than-Moore era.Integrated silicon photonics technology exhibits distinguished potential to achieve faster operation speed,less power dissipation,and lower cost in IC industry,because their COMS compatibility,fast response,and high monolithic integration capability.Particularly,compared with other on-chip resonators(e.g.microrings,2D photonic crystal cavities)silicon-on-insulator(SOI)-based photonic crystal nanobeam cavity(PCNC)has emerged as a promising platform for on-chip integration,due to their attractive properties of ultra-high Q/V,ultra-compact footprints and convenient integration with silicon bus-waveguides.In this paper,we present a comprehensive review on recent progress of on-chip PCNC devices for lasing,modulation,switching/filting and label-free sensing,etc.

High-intensity spatial-mode steerable frequency up-converter toward on-chip integration

Integrated photonic devices are essential for on-chip optical communication,optical-electronic systems,and quantum information sciences.To develop a high-fidelity interface between photonics in various frequency domains without disturbing their quantum properties,nonlinear frequency conversion,typically steered with the quadratic(χ2)process,should be considered.Furthermore,another degree of freedom in steering the spatial modes during theχ2 process,with unprecedent mode intensity is proposed here by modulating the lithium niobate(LN)waveguide-based inter-mode quasi-phasematching conditions with both temperature and wavelength parameters.Under high incident light intensities(25 and 27.8 dBm for the pump and the signal lights,respectively),mode conversion at the sum-frequency wavelength with sufficient high output power(−7–8 dBm)among the TM01,TM10,and TM00 modes is realized automatically with characterized broad temperature(ΔT≥8°C)and wavelength windows(Δλ≥1 nm),avoiding the previous efforts in carefully preparing the signal or pump modes.The results prove that high-intensity spatial modes can be prepared at arbitrary transparent wavelength of theχ2 media toward on-chip integration,which facilitates the development of chip-based communication and quantum information systems because spatial correlations can be applied to generate hyperentangled states and provide additional robustness in quantum error correction with the extended Hilbert space.

Two-dimensional optoelectronic devices for silicon photonic integration

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.

Subwavelength grating waveguide devices in siliconon-insulators for integrated microwave photonics

We provide an overview of our recent work on developing subwavelength grating （SWG） waveguide devices as an enabling technology for integrated microwave photonics. First, we describe wavelength-selective SWG waveguide filters, including ring resonators, Bragg gratings, and contradirectional couplers. Second, we discuss the development of an index variable optical true time delay line that exploits spatial diversity in an equal-length waveguide array. These SWG waveguide components are fundamental building blocks for realizing more complex structures for advanced microwave photonic signal processing.

A compact in-plane photonic crystal channel drop filter

This paper presents a novel in-plane photonic crystal channel drop filter. The device is composed of a resonant cavity sandwiched by two parallel waveguides. The cavity has two resonant modes with opposite symmetries. Tuning these two modes into degeneracy causes destructive interference in bus waveguide, which results in high forward drop efficiency at the resonant wavelength. From the result of numerical analysis by using two-dimensional finite-difference time-domain method, the channel drop filter has a drop efficiency of 96% and a Q value of over 3000, which can be used in dense wavelength division multiplexing systems.

Robust optical mode converter based on topological waveguide arrays

Optical mode converters are essential for enhancing the capacity of optical communication systems. However, fabrication errors restrict the further improvement of conventional mode converters. To address this challenge, we have designed an on-chip TE0–TE1mode converter based on topologically protected waveguide arrays. The simulation results demonstrate that the converter exhibits a mode coupling efficiency of 93.5% near 1550 nm and can tolerate a relative fabrication error of 30%. Our design approach can be extended to enhance the robustness for other integrated photonic devices, beneficial for future development of optical network systems.

低损耗薄膜铌酸锂光集成器件的研究进展

近年来得益于薄膜铌酸锂晶圆离子切片技术和低损耗微纳刻蚀工艺的飞速发展,薄膜铌酸锂光集成结构提供了光场紧束缚、快速电光调谐、高效频率转换和声光转换的空前能力,各种高性能的薄膜铌酸锂光集成器件不断涌现,且朝着大规模光集成芯片的方向迅猛发展,为高速信息处理、精密测量、量子信息、人工智能等重要应用提供了全新的发展动力。本文主要围绕铌酸锂晶体发展历史、薄膜铌酸锂离子切片技术发展历程、极低损耗微纳刻蚀技术演化进程,以及高性能的薄膜铌酸锂光集成器件进展进行总结,并展望了未来的发展趋势。

On-chip wireless silicon photonics: from reconfigurable interconnects to lab-on-chip devices

Photonic integrated circuits are developing as key enabling components for high-performance computing and advanced networkon-chip,as well as other emerging technologies such as lab-on-chip sensors,with relevant applications in areas from medicine and biotechnology to aerospace.These demanding applications will require novel features,such as dynamically reconfigurable light pathways,obtained by properly harnessing on-chip optical radiation.In this paper,we introduce a broadband,high directivity(4150),low loss and reconfigurable silicon photonics nanoantenna that fully enables on-chip radiation control.We propose the use of these nanoantennas as versatile building blocks to develop wireless(unguided)silicon photonic devices,which considerably enhance the range of achievable integrated photonic functionalities.As examples of applications,we demonstrate 160 Gbit s−1 data transmission over mm-scale wireless interconnects,a compact low-crosstalk 12-port crossing and electrically reconfigurable pathways via optical beam steering.Moreover,the realization of a flow micro-cytometer for particle characterization demonstrates the smart system integration potential of our approach as lab-on-chip devices.

基于边缘优化设计的低损耗Si3N4光功率分束器

随着信息技术的发展,市场对于更小型化、更高效光器件的需求不断增加.采用互补金属氧化物半导体(complementary metal oxide semiconductor,CMOS)工艺,成功制备了Si_(3)N_(4)光功率分束器并对其进行测试.结果表明,在1550 nm波长下,边缘优化的1×8功率分束器的总损耗仅为1.30 dB,且其体积相较于传统设计可减小30%.本研究应用逆向优化算法,突破了传统设计仅能针对规则图形设计的限制,为实现小尺寸、低损耗的光功率分束器提供了一种可行途径.

High-fidelity mode scaling via topologicaloptimized on-chip metalens for compact photonic interconnection

Photonic integrated circuits(PICs)have attracted significant interest in communication,computation,and biomedical applications.However,most rely on highly integrated PICs devices,which require a low-loss and high-integration guided wave path.Owing to the various dimensions of different integrated photonic devices,their interconnections typically require waveguide tapers.Although a waveguide taper can overcome the width mismatch of different devices,its inherent tapering width typically results in a long length,which fundamentally limits the efficient interconnection between devices with a high scaling ratio over a short distance.Herein,we proposed a highly integrated on-chip metalens that enables optical interconnections between devices with high width-scaling ratios by embedding a free-form metasurface in a silicon-on-insulator film.The special geometric features endow the designed metalens with high coupling efficiency and high integration.The device has a footprint of only 2.35μm in the longitudinal direction and numerical aperture of 2.03,enabling beam focusing and collimation of less than 10μm between devices with width-scaling ratio of 11.For the fundamental transverse electric field(TE0)mode,the relative transmittance is as high as 96%for forward incidence(from wide to narrow waveguides),whereas the metalens can realize wavefront shaping for backward incidence,which can be used in optical phase arrays.This study provides new ideas for optical interconnect design and wavefront shaping in high-integration PICs.Our design approach has potential applications in directional radiators,LiDAR,on-chip optical information processing,analogue computing,and imaging.

大规模集成光学微腔传感研究进展(特邀)

近年来,集成光学微腔因其高灵敏度、高拓展性和高集成度在传感领域得到了广泛应用。利用低成本的互补金属氧化物半导体(CMOS)兼容的微纳加工工艺,集成光学微腔在实现大规模制备的小型化传感系统中具有显著潜力。然而,实现大规模传感阵列系统仍然面临着诸多挑战,包括传感通量不足、全集成难度大、封装和测试成本高等。这些挑战主要是由传感器的系统架构复杂、光谱利用率低、加工工艺成本高等各种因素导致。本文旨在阐述常见阵列传感架构设计、集成光学谐振微腔传感器基本单元(主要包括微环、缺陷型光子晶体以及Fabry-Pérot型光子晶体谐振腔结构)及其传感阵列应用工作的研究进展。此外,还探讨了传感阵列系统的可拓展性和优化方案,并对其未来的发展方向进行了展望。

一种基于多模干涉波导的超低尺寸波分复用器

波分复用/解复用器作为数据传输的核心器件,广泛应用于片上光互联网络中,其中最重要的指标就是器件的尺寸,插入损耗和串扰大小,为解决传统硅基阵列波导光栅尺寸较大,阵列波导光栅光强不均的问题,我们提出了一种基于绝缘体上硅(SOI)的环形反射器辅助多模干涉波导的四通道波分复用器,可以实现不同通道的波长分离。其核心尺寸仅为10μm×34μm,最小相邻通道串扰为-14.42 dB。

基于亚波长光栅辅助定向耦合器的集成铌酸锂偏振分束器

绝缘体上铌酸锂(LNOI)是实现高速光子集成回路(PICs)的理想平台。通过充分利用铌酸锂(LN)的优势,LNOI平台能够实现高速电光和高效非线性光学集成器件。偏振分束器(PBS)作为分离和组合两种正交偏振光模式的关键无源器件之一,在实现片上偏振复用系统并提升光通信系统数据传输容量方面发挥着至关重要的作用。近年来,基于不同结构的PBS已经被成功实现,其中,基于亚波长光栅辅助定向耦合结构的PBS表现出优异的器件性能和紧凑的器件尺寸。本文基于氮化硅-铌酸锂异质集成的间接刻蚀方案,实现了一种亚波长光栅辅助定向耦合结构的高性能PBS。仿真结果表明,当波长在1500~1600 nm时,器件的偏振消光比均大于24.49 dB。实验数据进一步证实,当波长在1500~1580 nm时,器件偏振消光比均大于18.06 dB。

Photonic circuits written by femtosecond laser in glass:improved fabrication and recent progress in photonic devices

Integrated photonics is attracting considerable attention and has found many applications in both classical and quantum optics,fulfilling the requirements for the ever-growing complexity in modern optical experiments and big data communication.Femtosecond(fs)laser direct writing(FLDW)is an acknowledged technique for producing waveguides(WGs)in transparent glass that have been used to construct complex integrated photonic devices.FLDW possesses unique features,such as three-dimensional fabrication geometry,rapid prototyping,and single step fabrication,which are important for integrated communication devices and quantum photonic and astrophotonic technologies.To fully take advantage of FLDW,considerable efforts have been made to produce WGs over a large depth with low propagation loss,coupling loss,bend loss,and highly symmetrical mode field.We summarize the improved techniques as well as the mechanisms for writing high-performance WGs with controllable morphology of cross-section,highly symmetrical mode field,low loss,and high processing uniformity and efficiency,and discuss the recent progress of WGs in photonic integrated devices for communication,topological physics,quantum information processing,and astrophotonics.Prospective challenges and future research directions in this field are also pointed out.

Broadband on-chip integrator based on silicon photonic phase-shifted Bragg grating

All-optical integrators are key devices for the realization of ultra-fast passive photonic networks, and, despite their broad applicability range(e.g., photonic bit counting, optical memory units, analogue computing, etc.), their realization in an integrated form is still a challenge. In this work, an all-optical integrator based on a silicon photonic phase-shifted Bragg grating is proposed and experimentally demonstrated, which shows a wide operation bandwidth of 750 GHz and integration time window of 9 ps. The integral operation for single pulse, inphase pulses, and π-shifted pulses with different delays has been successfully achieved.

Subwavelength on-chip light focusing with bigradient all-dielectric metamaterials for dense photonic integration

Photonic integrated circuits(PICs)provide a promising platform for miniaturized on-chip optical systems for communication,computation,and sensing applications.The dense integration of photonic components is one of the keys to exploit the advantages of PIC.Although light focusing is a fundamental and indispensable function in PICs,focusing light at the micro/nanometer-scale is challenging.Here,a bigradient on-chip metalens(BOML)is proposed to achieve ultrasmall focal lengths and spot sizes at the subwavelength scale for dense PICs.The design of BOML combines gradient geometry and gradient refractive index into one metalens by simultaneously engineering the length and width of subwavelength silicon slots.With a small device footprint of only 168μm,the BOML achieves efficient on-chip focusing with the recordbreaking figure-of-merits,which are the ratio of wavelength to focal length/spot size(0.268 and 2.83)and numerical aperture(1.78).Leveraging on the Fresnel design,the footprint of BOML is further reduced by 55.1%,and the numerical aperture is enhanced to 1.9.The demonstration of mode conversion and beam steering with efficiency over 80%and a tilting range of 7.2°holds the potential for highly dense on-chip photonic systems for optical communication,optical sensing,nonlinear optics,and neural networks for deep learning.

Topology-empowered membrane devices for terahertz photonics

Control of terahertz waves offers a profound platform for next-generation sensing,imaging,and information communications.However,all conventional terahertz components and systems suffer from bulky design,sensitivity to imperfections,and transmission loss.We propose and experimentally demonstrate onchip integration and miniaturization of topological devices,which may address many existing drawbacks of the terahertz technology.We design and fabricate topological devices based on valley-Hall photonic structures that can be employed for various integrated components of on-chip terahertz systems.We demonstrate valleylocked asymmetric energy flow and mode conversion with topological waveguide,multiport couplers,wave division,and whispering gallery mode resonators.Our devices are based on topological membrane metasurfaces,which are of great importance for developing on-chip photonics and bring many features into terahertz technology.

Waveguide-coupled deterministic quantum light sources and post-growth engineering methods for integrated quantum photonics

Integrated photonic quantum circuits(IPQCs)have attracted increasing attention in recent years due to their widespread applications in quantum information science.While the most envisioned quantum technologies such as quantum communications,quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light sources.By introducing sizeconfined nanostructures or crystal imperfections,low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources(SPSs).Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms,including molecules,quantum dots,color centers and two-dimensional materials.With the rapid development of the chip-scale generation of single photons with deterministic quantum emitters,the field of IPQCs has raised new challenges and opportunities.In this paper,we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs,and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled SPSs.Future prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.

基于压电效应的光电子集成技术研究进展(特邀)

压电效应是一种实现电能与机械能之间相互转换的重要物理现象。随着集成光电子技术和压电薄膜材料制备技术的日益成熟,压电效应在光电子集成芯片领域引起广泛的研究。在压电效应的作用下,外部电场可以操控薄膜材料的形变,从而改变折射率,实现光电调谐和声光调制。本文首先介绍常见压电薄膜材料及其研究进展,随后回顾和探讨基于压电效应的光电子集成器件的研究进展。最后,对压电调谐器件和声光调制器的应用进行介绍和展望,分析其大规模应用面临的挑战和问题。

片上光互连器件的智能化设计研究进展

光互连技术相比于电互连等传统通信技术具有带宽大、能耗低、抗干扰等系列优势,正在逐渐成为短距离、甚短距离数据终端间通信的重要手段和发展趋势.基于绝缘体上硅的片上光互连技术作为光互连在芯片尺度上的实现,在一系列复用技术的支持下得到了非常广泛的应用.智能设计方法具有原理直观、设计自由度高、材料兼容性好等优点.随着智能设计方法在片上光互连器件设计活动中的广泛应用,目前片上光互连器件逐渐呈现出超紧凑化、可调控化、系统集成化等重要发展趋势.本文首先归纳了几种目前最常用的片上光互连器件的智能设计方法,然后详细分析了智能化设计的片上光互连器件的几个重大研究进展与趋势,最后对未来智能化设计的片上光互连器件的发展进行了展望.