High on-state current p-type tunnel effect transistor based on doping modulation

To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier.Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure.This method provides a new idea for the realization of high on-state current TFET devices.

SiC gate-controlled bipolar field effect composite transistor with polysilicon region for improving on-state current

A novel silicon carbide gate-controlled bipolar field effect composite transistor with poly silicon region(SiC GCBTP)is proposed.Different from the traditional electrode connection mode of SiC vertical diffused MOS(VDMOS),the P+region of P-well is connected with the gate in SiC GCBTP,and the polysilicon region is added between the P+region and the gate.By this method,additional minority carriers can be injected into the drift region at on-state,and the distribution of minority carriers in the drift region will be optimized,so the on-state current is increased.In terms of static characteristics,it has the same high breakdown voltage(811 V)as SiC VDMOS whose length of drift is 5.5μm.The on-state current of SiC GCBTP is 2.47×10^(-3)A/μm(V_(G)=10 V,V_(D)=10 V)which is 5.7 times of that of SiC IGBT and 36.4 times of that of SiC VDMOS.In terms of dynamic characteristics,the turn-on time of SiC GCBTP is only 0.425 ns.And the turn-off time of SiC GCBTP is similar to that of SIC insulated gate bipolar transistor(IGBT),which is 114.72 ns.

Effects of spot size on the operation mode of Ga As photoconductive semiconductor switch employing extrinsic photoconductivity

To guide the illuminating design to improve the on-state performances of gallium arsenide(GaAs)photoconductive semiconductor switch(PCSS),the effect of spot size on the operation mode of GaAsPCSS based on a semi-insulating wafer with a thickness of 1 mm,triggered by a 1064-nm extrinsic laser beam with the rectangular spot,has been investigated experimentally.It is found that the variation of the spot size in length and width can act on the different parts of the output waveform integrating the characteristics of the linear and nonlinear modes,and then significantly boosts the PCSS toward different operation modes.On this basis,a two-channel model containing the active and passive parts is introduced to interpret the relevant influencing mechanisms.Results indicate that the increased spot length can peak the amplitude of static domains in the active part to enhance the development of the nonlinear switching,while the extended spot width can change the distribution of photogenerated carriers on both parts to facilitate the linear switching and weaken the nonlinear switching,which have been proved by comparing the domain evolutions under different spot sizes.

Performance of Lateral 4H-SiC Photoconductive Semiconductor Switches by Extrinsic Backside Trigger

Photoconductive semiconductor switch(PCSS)can be applied in pulsed high power systems and microwave techniques.However,reducing the damage and increasing the lifetime of silicon carbide(SiC)PCSS are still faced severe challenges.In this study,PCSSs with various structures were prepared on 4-inch diameter,500μm thick high-purity semi-insulating 4H-SiC substrates and their on-state resistance and damage mechanisms were investigated.It was found that the PCSS of an Au/TiW/Ni electrode system annealed at 950℃had a minimum on-state resistance of 6.0Ωat 1 kV bias voltage with a 532 nm and 170 mJ pulsed laser by backside illumination single trigger.The backside illumination single trigger could reduce on-state resistance and alleviate the damage of PCSS compared to the frontside trigger when the diameter of the laser spot was larger than the channel length of PCSS.For the 200 s trigger test by a 10 Hz laser,the black branch-like ablation on Au/TiW/Ni PCSS was mainly caused by thermal stress owing to hot carriers.Replacing metal Ni with boron gallium co-doped zinc oxide(BGZO)thin films annealed at 400℃,black branch-like ablation was alleviated while concentric arc damage was obvious at the anode.The major causes of concentric arc are both pulsed laser diffraction and thermal effect.

Sub-5 nm bilayer GaSe MOSFETs towards ultrahigh on-state current

Dielectric engineering plays a crucial role in the process of device miniaturization.Herein we investigate the electrical properties of bilayer GaSe metal-oxide-semiconductor field-effect transistors(MOSFETs),considering hetero-gate-dielectric construction,dielectric materials and GaSe stacking pattern.The results show that device performance strongly depends on the dielectric constants and locations of insulators.When highk dielectric is placed close to the drain,it behaves with a larger on-state current(I_(on))of 5052μA/μm when the channel is 5 nm.Additionally,when the channel is 5 nm and insulator is HfO2,the largest I_(on) is 5134μA/μm for devices with AC stacking GaSe channel.In particular,when the gate length is 2 nm,it still meets the HP requirements of ITRS 2028 for the device with AA stacking when high-k dielectric is used.Hence,the work provides guidance to regulate the performance of the two-dimensional nanodevices by dielectric engineering.

Analysis of rotor eddy current loss and thermal deformation of magnetic liquid double suspension bearing

Magnetic-liquid double suspension bearing(MLDSB)is a new type of suspension bearing based on electromagnetic suspension and supplemented by hydrostatic supporting.Without affecting the electromagnetic suspension force,the hydrostatic supporting effect is increased,and the real-time coupling of magnetic and liquid supporting can be realized.However,due to the high rotation speed,the rotor part produces eddy current loss,resulting in a large temperature rise and large ther-mal deformation,which makes the oil film thickness deviate from the initial design.The support and bearing characteristics are seriously affected.Therefore,this paper intends to explore the internal effects of eddy current loss of the rotor on the temperature rise and thermal deformation of MLDSB.Firstly,the 2D magnetic flow coupling mathematical model of MLDSB is established,and the eddy current loss distribution characteristics of the rotor are numerically simulated by Maxwell software.Secondly,the internal influence of mapping relationship of structural operating parameters such as input current,coil turns and rotor speed on rotor eddy current loss is revealed,and the changing trend of rotor eddy current loss under different design parameters is explored.Thirdly,the eddy cur-rent loss is loaded into the heat transfer finite element calculation model as a heat source,and the temperature rise of the rotor and its thermal deformation are simulated and analyzed,and the influ-ence of eddy current loss on rotor temperature rise and thermal deformation is revealed.Finally,the pressure-flow curve and the distribution law of the internal flow field are tested by the particle image velocimetry(PIV)system.The results show that eddy current loss increases linearly with the in-crease of coil current,coil turns and rotor speed.The effect of rotational speed on eddy current loss is much higher than that of coil current and coil turns.The maximum temperature rise,minimum temperature rise and maximum thermal deformation of the rotor increase with the increase of eddy current loss.The test results of flow-pressure and internal trace curves are basically consistent with the theoretical simulation,which effectively verifies the correctness of the theoretical simulation.The research results can provide theoretical basis for the design and safe and stable operation of magnetic fluid double suspension bearings.

Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current

The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor(IGBT)power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips.Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT,increasing the power density of the motor controller of electric vehicles,and reducing the cost of electric vehicles.

Application of an Al-doped zinc oxide subcontact layer on vanadium-compensated 6H–SiC photoconductive switches

Al-doped ZnO thin film （AZO） is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches （PCSSs） to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n＋-AZO subcontact layer is 14.7% lower than that of PCSS without an n＋-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.

Simulation study of device physics and design of GeOI TFET with PNN structure and buried layer for high performance

Large threshold voltage and small on-state current are the main limitations of the normal tunneling field effect transistor (TFET). In this paper, a novel TFET with gate-controlled P+N+N+ structure based on partially depleted GeOI (PD-GeOI) substrate is proposed. With the buried P+-doped layer (BP layer) introduced under P+N+N+ structure, the proposed device behaves as a two-tunneling line device and can be shut off by the BP junction, resulting in a high on-state current and low threshold voltage. Simulation results show that the on-state current density Ion of the proposed TFET can be as large as 3.4 × 10^−4 A/μm, and the average subthreshold swing (SS) is 55 mV/decade. Moreover, both of Ion and SS can be optimized by lengthening channel and buried P+ layer. The off-state current density of TTP TFET is 4.4 × 10^−10 A/μm, and the threshold voltage is 0.13 V, showing better performance than normal germanium-based TFET. Furthermore, the physics and device design of this novel structure are explored in detail.

A novel planar vertical double-diffused metal-oxide-semiconductor field-effect transistor with inhomogeneous floating islands

A novel planar vertical double-diffused metal-oxide-semiconductor （VDMOS） structure with an ultra-low specific on-resistance （Ron,sp）, whose distinctive feature is the use of inhomogeneous floating p-islands in the n-drift region, is proposed. The theoretical limit of its Ron,sp is deduced, the influence of structure parameters on the breakdown voltage （BV） and Ron,sp are investigated, and the optimized results with BV of 83 V and Ron,sp of 54 mΩ.mm2 are obtained. Simulations show that the inhomogeneous-floating-islands metal-oxide-semiconductor field-effect transistor （MOSFET） has a superior ＂Ron,sp/BV＂ trade-off to the conventional VDMOS （a 38% reduction of Ron,sp with the same BV） and the homogeneous-floating-islands MOSFET （a 10% reduction of Ron,sp with the same BV）. The inhomogeneous-floatingislands MOSFET also has a much better body-diode characteristic than the superjunction MOSFET. Its reverse recovery peak current, reverse recovery time and reverse recovery charge are about 50, 80 and 40% of those of the superjunction MOSFET, respectively.

Effects of topography on the sub-tidal circulation in the southwestern Huanghai Sea(Yellow Sea)in summer

A nested circulation model system based on the Princeton ocean model （POM） is set up to simulate the currentmeter data from a bottom-mounted Acoustic Doppler Profiler （ADP） deployed at the 30 m depth in the Lunan（South Shandong Province, China） Trough south of the Shandong Peninsula in the summer of 2008, and to study the dynamics of the circulation in the southwestern Huanghai Sea （Yellow Sea）. The model has reproduced well the observed subtidal current at the mooring site. The results of the model simulation suggest that the bottom topography has strong steering effects on the regional circulation in summer. The model simulation shows that the Subei （North Jiangsu Province, China）coastal current flows north- ward in summer, in contrast to the southeastward current in the center of the Lunan Trough measured by the moored currentmeter. The analyses of the model results suggest that the southeastward current at the mooring site in the Lunan Trough is forced by the westward wind-driven current along the Lunan coast, which meets the northward Subei coastal current at the head of the Haizhou Bay to flow along an offshore path in the southeastward direction in the Lunan Trough. Analysis suggests that the Subei coastal current, the Lunan coastal current, and the circulation in the Lunan Trough are independent current systems con- trolled by different dynamics. Therefore, the current measurements in the Lunan Trough cannot be used to represent the Subei coastal current in general.

A 3D SiC MOSFET with poly-silicon/SiC heterojunction diode

A three-dimensional(3D)silicon-carbide(SiC)trench metal-oxide-semiconductor field-effect transistor(MOSFET)with a heterojunction diode(HJD-TMOS)is proposed and studied in this work.The SiC MOSFET is characterized by an HJD which is partially embedded on one side of the gate.When the device is in the turn-on state,the body parasitic diode can be effectively controlled by the embedded HJD,the switching loss thus decreases for the device.Moreover,a highly-doped P+layer is encircled the gate oxide on the same side as the HJD and under the gate oxide,which is used to lighten the electric field concentration and improve the reliability of gate oxide layer.Physical mechanism for the HJD-TMOS is analyzed.Comparing with the conventional device with the same level of on-resistance,the breakdown voltage of the HJD-TMOS is improved by 23.4%,and the miller charge and the switching loss decrease by 43.2%and 48.6%,respectively.

The Effect of Levobunolol Hydrochloride on the Calcium andPotassium Channels in Isolated Ventricular Myocytes of Guinea Pig

The effects of levobunolol hydrochlorid (Bun) on the type L calciumchannel currents (Ica) and delayed rectifier potassium channel currents (Ik) in isolated ventricular myocytes of guinea pig were studied by using patch clamp wholecell recording techniques. The results were showed that: 1) Bun caused a dosedependent decrease in Ica and a dose-dependent increase in Ik of the ventricular myocytes.The threshold concentrations of Bun for Ica and Ik were 10-8 mol/L and10-7 mol/L respectively. The maximum effective concentration of Bun for both Ica and Ik was 3 × 10-5 mol/L, and half-maximal concentration was 3 × 10-6 mol/L;2 ) Ik was blocked by 2× 10-6mol/L tetraethylammonium (TEA). A concentration of 3 × 10-6 mol/L Bun showed a decreasing effect on the Ica as revealed by the current-voltage relationship curve, i. e., Bun caused an elevation of the curve; 3)When Ica was blocked by 2 × 10-6 mol/L Isoptin (Verapamil), at a concentrationof 3 × 106- mol/L Bun showed an increasing effect on Ik and the effect could be blocked by TEA. The above-mentioned results indicated that Bun had an inhibito-ry effect on Ica and a fascilitatory effect on Ik The results suggested that themolecular mechanisms of antihypertensive, heart rate slowing and β-receptorblocking effects of Bun might be due to decrease of Ica and increase of Ik.

Low working loss Si/4H-SiC heterojunction MOSFET with analysis of the gate-controlled tunneling effect

A silicon (Si)/silicon carbide (4H-SiC) heterojunction double-trench metal-oxide-semiconductor field effect transistor (MOSFET) (HDT-MOS) with the gate-controlled tunneling effect is proposed for the first time based on simulations. In this structure, the channel regions are made of Si to take advantage of its high channel mobility and carrier density. The voltage-withstanding region is made of 4H-SiC so that HDT-MOS has a high breakdown voltage (BV) similar to pure 4H-SiC double-trench MOSFETs (DT-MOSs). The gate-controlled tunneling effect indicates that the gate voltage (V_(G)) has a remarkable influence on the tunneling current of the heterojunction. The accumulation layer formed with positive VG can reduce the width of the Si/SiC heterointerface barrier, similar to the heavily doped region in an Ohmic contact. This narrower barrier is easier for electrons to tunnel through, resulting in a lower heterointerface resistance. Thus, with similar BV (approximately 1770 V), the specific on-state resistance (R_(ON-SP)) of HDT-MOS is reduced by 0.77 mΩ·cm^(2) compared with that of DT-MOS. The gate-to-drain charge (Q_(GD)) and switching loss of HDT-MOS are 52.14% and 22.59% lower than those of DT-MOS, respectively, due to the lower gate platform voltage (V_(GP)) and the corresponding smaller variation (ΔV_(GP)). The figure of merit (Q_(GD)×R_(ON-SP)) of HDT-MOS decreases by 61.25%. Moreover, the heterointerface charges can reduce RON-SP of HDT-MOS due to trap-assisted tunneling while the heterointerface traps show the opposite effect. Therefore, the HDT-MOS structure can significantly reduce the working loss of SiC MOSFET, leading to a lower temperature rise when the devices are applied in the system.

Relativistic Formulae for the Biquaternionic Model of Electro-Gravimagnetic Charges and Currents

Here the biquaternionic model of electro-gravimagnetic field (EGM-field) has been considered, which describes the change of EGM-fields, charges and currents in their interaction. The invariance of these equations with respect to the group of Poincare-Lorentz transformations has been proved. The relativistic formulae of transformation for density of electric and gravity-magnetic charges and currents, active power and forces have been obtained.

Unipolar p-type monolayer WSe_(2) field-effect transistors with high current density and low contact resistance enabled by van der Waals contacts

High-performance field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors have demonstrated great promise in post-Moore integrated circuits. However, unipolar p-type 2D semiconductor transistors yet remain challenging and suffer from low saturation current density (less than 10 µA·µm^(−1)) and high contact resistance (larger than 100 kΩ·µm), mainly limited by the Schottky barrier induced by the mismatch of the work-functions and the Fermi level pinning at the metal contact interfaces. Here, we overcome these two obstacles through van der Waals (vdW) integration of high work-function metal palladium (Pd) as the contacts onto monolayer WSe2 grown by chemical vapor deposition (CVD) method. We demonstrate unipolar p-type monolayer WSe2 FETs with superior device performance: room temperature on-state current density exceeding 100 µA·µm^(−1), contact resistance of 12 kΩ·µm, on/off ratio over 107, and field-effect hole mobility of ~ 103 cm2·V^(−1)·s^(−1). Electrical transport measurements reveal that the Fermi level pinning effect is completely effectively eliminated in monolayer WSe2 with vdW Pd contacts, leading to a Schottky barrier-free Ohmic contact at the metal-semiconductor junctions. Combining the advantages of large-scale vdW contact strategy and CVD growth, our results pave the way for wafer-scale fabrication of complementary-metal-oxide-semiconductor (CMOS) logic circuits based on atomically thin 2D semiconductors.

A novel TFS-IGBT with a super junction floating layer

A novel trench field stop（TFS） IGBT with a super junction（SJ） floating layer（SJ TFS-IGBT） is proposed. This IGBT presents a high blocking voltage（〉 1200 V）,low on-state voltage drop and fast turn-off capability.A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution,which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state /switching state for the SJ TFS-IGBT.A low on-state voltage（VF） and a high breakdown voltage（BV） can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance.A low turn-off loss can be achieved by decreasing the concentration of the P-anode.Simulation results show that the BV is enhanced by 100 V,VF is decreased by 0.33 V（at 100 A/cm2） and the turn-off time is shortened by 60%,compared with conventional TFS-IGBTs.

Ultrahigh-performance planar β-Ga2O3 solar-blind Schottky photodiode detectors

The low dark current, high responsivity and high specific detectivity could be preferably achieved in detectors based on junctions, owing to the efficient constraint of carriers. Compared with the other junctions, planar Schottky junctions have simple structures and technological demands and are easy integrated. Herein, in this work, we prepared the β-Ga_(2)O_(3) thin film by metalorganic chemical vapor deposition method to construct planar Ti/β-Ga2O3/Ni Schottky photodiode detectors with different onstate resistances. Fortunately, all the devices exhibit state-of-the-art performances, such as responsivity of 175–1372 A W^(-1),specific detectivity of 10^(14) Jones and external quantum efficiency of 85700%–671500%. In addition, the dependences of device performances on the on-state resistances indicate that the higher dark currents, photocurrents and photoresponsivities may well be obtained when on-state resistance is smaller, due to the less external power is used to overcome the impendence and condensance at the Ti/β-Ga_(2)O_(3) and Ni/β-Ga_(2)O_(3) interfaces, but contributing to higher electric current flow both in the dark and under illuminations.

Novel lateral IGBT with n-region controlled anode on SOI substrate

A new lateral insulated-gate bipolar transistor （LIGBT） structure on SOI substrate, called an n-region controlled anode LIGBT （NCA-LIGBT）, is proposed and discussed. The n-region controlled anode concept results in fast switch speeds, efficient area usage and effective suppression NDR in forward I-V characteristics. Simulation results of the key parameters （n-region doping concentration, length, thickness and p-base doping concentration） show that the NCA-LIGBT has a good tradeoff between turn-off time and on-state voltage drop. The proposed LIGBT is a novel device for power ICs such as PDP scan driver ICs.

Insulated gate bipolar transistor with trench gate structure of accumulation channel

An accumulation channel trench gate insulated gate bipolar transistor （ACT-IGBT） is proposed. The simu- lation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT （CT-IGBT） are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.