Void Fraction Measurement in Oil-Gas Transportation Pipeline Using an Improved Electrical Capacitance Tomography System

To measure the void fraction online in oil-gas pipeline, an improved electrical capacitance tomography (ECT) system has been designed. The capacitance sensor with new structure has twelve internal electrodes and overcomes the influence of the pipe wall. The data collection system is improved by using high performance IC (integrated circuit). Static tests of bubble flow, stratified flow and annular flow regime are carried out. Measurements are taken on bubble flow, stratified flow and slug flow. Results show that the new ECT system performs well on void fraction measurement of bubble flow and stratified flow, but the error of measurement for slug flow is more than 10%.

Characterization of Interface State Density of Ni/p-GaN Structures by Capacitance/Conductance-Voltage-Frequency Measurements

For the frequency range of I kHz-lOMHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage （C-V） and conductance-frequency-voltage （G-f-V） measurements at room temperature. To obtain the real capacitance and interface state density of the Ni/p-GaN structures, the effects of the series resistance （Rs） on high-frequency （SMHz） capacitance values measured at a reverse and a forward bias are investigated. The mean interface state densities obtained from the CHF-CLF capacitance and the conductance method are 2 ×1012 e V-1 cm-2 and 0.94 × 1012 eV-1 cm-2, respectively. Furthermore, the interface state density derived from the conductance method is higher than that reported from the Ni/n-GaN in the literature, which is ascribed to a poor crystal quality and to a large defect density of the Mg-doped p-GaN.

Application of Electrical Capacitance Tomography to the Concentration Measurement in a Cyclone Dipleg

精确稳固的集中测量在过程工业起一个关键作用。脱机分析的大小能被用来估计过程效率，以在流动识别问题，并且验证计算模型。联机大小能被用于活跃控制。电的电容断层摄影术(ECT ) 是有在多相的流动测量的大潜力的一种唯一的测量技术。试验性的研究在气旋隔板 dipleg 在稳固的集中大小上被执行，用 ECT。在这个实验，八个电极为被放在 dipleg 的直试管上的 ECT 传感器被选择。根据螺丝钉， feeder 和气流的效果从气旋的顶评估的波动的特征被分析。方法的可行性和可靠性被试验性的结果验证。

Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si Structures via Capacitance/Conductance-Voltage Measurements

Au/n-Si （MS） structures with a high dielectric interlayer （0.03 graphene-doped PVA） are fabricated to investigate the illumination and voltage effects on electrical and dielectric properties by using capacitance-voltage （C-V） and conductance-voltage （G/w-V） measurements at room temperature and at 1 MHz. Some of the main electrical parameters such as concentration of doping atoms （ND）, barrier height （ ФB（ C - V） ）, depletion layer width （WD） and series resistance （Rs） show fairly large illumination dispersion. The voltage-dependent profile of surface states （Nss） and resistance of the structure （Ri ） are also obtained by using the dark-illumination capacitance （Cdark- Cm） and Nicollian-Brews methods, respectively, For a clear observation of changes in electrical parameters with illumination, the values of ND, WD, ФB（O- V） and Rs are drawn as a function of illumination intensity. The values of ND and WD change almost linearly with illumination intensity. On the other hand, Rs decreases almost exponentially with increasing illumination intensity whereas ФB（C - V） increases. The experimental results suggest that the use of a high dielectric interlayer （0.03 graphene-doped PVA） considerably passivates or reduces the magnitude of the surface states. The large change or dispersion in main electrical parameters can be attributed to generation of electron-hole pairs in the junction under illumination and to a good light absorption. All of these experimental results confirm that the fabricated Au/0.03 graphene-doped PVA/n-Si structure can be used as a photodiode or a capacitor in optoelectronic applications.

New Method of Measuring the Positive-sequence Capacitance of T-connection Transmission Lines

A novel method of measuring the positive-sequence capacitance of T-connection transmission lines is proposed. The mathematical model of the new method is explained in detail. In order to obtain enough independent equations, three independent operation modes of T-connection transmission lines during the line measurement are introduced. The digital simulation results and field measurement results are shown. The simulation and measurement results have validated that the new method can meet the needs of measuring the positive-sequence capacitance of T-connection transmission lines. This method has been implemented in the newly developed measurement instrument.

The Evaluation of Measurement Uncertainty and Its Application in the Vacuum Pressure Measurement

In order to accurately measure the pressure and the pressure difference between two points in the vacuum chamber, a large number of experimental data were used to research the performance of the three capacitance diaphragm gauge and analysis the main influences of the uncertainly degree of pressure in the process. In this paper, three kind of uncertainty, such as the single uncertainty, the synthesis uncertainty and the expanded uncertainty of the three capacitance diaphragm gauges are introduced in detail in pressure measurement. The results show that the performance difference of capacitance diaphragm gauge can be very influential to the accuracy of the pressure difference measurement and the uncertainty of different pressure can be very influential to pressure measurement. That for accurately measuring pressure and pressure difference has certain reference significance.

A dC/dV Measurement for Quantum-Dot Light-Emitting Diodes

We present dC/dV analysis based on the capacitance-voltage(C–V)measurement of quantum-dot lightemitting diodes(QLEDs),and find that some key device operating parameters(electrical and optical turn-on voltage,peak capacitance,maximum efficiency)can be directly related to the turning points and maximum/minimum of the dC/dV(versus voltage)curve.By the dC/dV study,the behaviors such as low turn-on voltage,simultaneous electrical and optical turn-on process,and carrier accumulation during the device aging can be well explained.Moreover,we perform the C–V and dC/dV measurement of aged devices,and confirm that our dC/dV analysis is correct for them.Thus,our dC/dV analysis method can be applied universally for QLED devices.It provides an in-depth understanding of carrier dynamics in QLEDs through simple C–V measurement.

Automated Calibration of RF On-Wafer Probing and Evaluation of Probe Misalignment Effects Using a Desktop Micro-Factory

A fully automatic setup for on-wafer contact probing will be presented. This setup consists of six automatable nano positioning axes used as tool holder and a sample holder. With this setup a fully automatic one-port SOL calibration for a Vector Network Analyzer is done. Furthermore a fully automated on-wafer contact probing is performed. Afterwards, the effects of a misalignment of the three tips of a GSG-probe are examined. Additionally the error on the calibration is calculated to determine its effect on the measurement. The results show, that a misalignment of the probe has a high impact on the measurement of the VNA. Hence a fully automated on-wafer probing presented in this paper is a good way to detect these misalignments and correct them if necessary.

Analysis and Application of the Synthetic Relative Measuring Method in On-Line Monitoring for Capacitive Equipment in Power Systems

On-line measurement for dielectric loss angle can effectively monitor the insulation condition of capacitive equipment in power systems. Synthetic relative measuring methods not only markedly overcome the shortcomings of traditional absolute measuring methods but also greatly improve the accuracy of dielectric loss angle measurement. However, synthetic relative measuring methods based on two or three pieces of capacitive equipment do not have the characteristic of generality. In this paper, a principle of synthetic relative measuring method is presented. The example of application for synthetic relative methods based on three and four pieces of capacitive equipment running in the same phase is taken to present the failure judgment matrices for N pieces of equipment. According to these matrices, the fault condition of N pieces of capacitive equipment can be watched, which is more general. Then some problems needing to be concerned along with two diagnostic methods used in diagnostic system are introduced. Finally, two programmable flow charts for the two methods are given and corresponding examples demonstrate their feasibility in practice.

Glass Thickness Measurement Instrument and Optical Fiber Transmision

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电气设备剩余电压测试仪校准方法

分析了电气设备剩余电压测试仪基本原理,提出一种基于标准阻容网络法对剩余电压测试仪剩余电压幅值和延迟时间参数进行校准的方法。结合交流标准电阻器和电容器等效模型,分析了标准电阻时间常数和标准电容损耗因数对校准结果的影响,推导了校准时剩余电压和延迟时间标准值的计算方法。采用1 MΩ交流标准电阻和1μF标准电容器组成的电路网络对剩余电压测试仪进行了校准,结果表明标准阻容网络法可满足该仪器的校准。对测量结果进行了不确定度分析,剩余电压幅值测量不确定度为1.1%,延迟时间测量不确定度为1.2%,主要不确定度分量为标准电容器损耗因数的影响。

基于多尺度密集连接网络的电容层析成像图像重建

为求解电容层析成像中的非线性病态反问题,提出了一种多尺度密集连接网络(MD-Net)模型。该模型由多尺度特征融合模块和密集连接块组成,以通过融合多尺度特征进一步提高图像的重建精度。通过MATLAB仿真实验平台构建了流型数据集,利用密集连接网络的非线性映射能力,完成训练集的学习与训练,并利用测试集进行训练效果评价。在此基础上进行了静态实验。仿真与静态实验结果均表明:与LBP、Landweber迭代算法和其他深度学习方法相比,该方法的重建精度最高、抗噪能力强,并具有良好的泛化能力。

基于两步正则化Gauss-Newton迭代算法的ECT图像重建

电容层析成像(ECT)技术求解图像重建问题属于非线性问题,并且存在严重的不适定性。为提高图像重建精度,提出了一种基于两步正则化Gauss-Newton迭代算法的ECT图像重建方法。针对标准正则化Gauss-Newton迭代算法在图像重建中存在的不收敛问题,引入了两步迭代方法;改进了正则化矩阵,提高了解估计的精确度;考虑到Gauss-Newton算法对迭代初值的依赖性,加入了同伦算法。最后,进行仿真和静态实验,并与线性反投影(LBP)算法、Landweber算法、Tikhonov正则化算法进行对比。结果表明,该方法可有效提高图像重建精度。

麻家边水库库容测量与变化分析

以麻家边水库为例,根据中小型水库库容测量的工作内容,探讨无人机载激光雷达测量、无人船自动测量、等高线法和不规则三角网法等先进方法在水库库容测量中的应用,并通过实地调查和对比不同时间的卫星影像资料合理解释水库库容变化,可为类似项目提供有益参考。

基于离散马尔可夫模型的液位感测系统分析

阐述一种新的测量原理及测量电容结构,其利用模型计算传统式电容液位测量方法中测量介质介电常数数据,分析定期标定的原因。新系统根据液位变化、介电常数、电容量关系,实现高精度测量。

电容层析成像测量甲醇制烯烃催化剂床层温度

甲醇制烯烃作为煤制烯烃的关键一环,对实现煤炭的综合利用有重要意义。这一过程是典型的放热反应,为提高甲醇转化率与产物选择性,需对床层温度进行在线监测。基于高温电容层析成像,提出一种在线测量催化剂床层温度(DMTO工业催化剂,ZSM-5分子筛)的方法。通过与介电常数变化极小的石英砂、氧化铝等床层材料的测量结果对比,发现不同催化剂的介电常数随温度变化规律不同,催化剂床层的测量电容值随温度变化敏感且重复性较好。因此可通过高温电容层析成像装置测量温度分布均匀的床层归一化电容平均值实现对床层温度的测量。通过采用薄壁石英管的固定反应器,对甲醇制烯烃催化剂、ZSM-5分子床层进行在线测温验证了该方法的有效性,发现通过线性反投影算法重构的ECTt图像,可获得床层温度分布。由此,可以通过高温电容层析成像装置实现对固定床床层床层测温。

电容变换的自校准浮地电压传感器

在侵入式浮地电压测量中,由于探头与地的耦合电容受探头距地高度、安装位置下方带电导体的影响,导致传感器增益不稳定,无法准确测量待测电压。针对该问题,提出一种基于电容变换的侵入式浮地电压测量校准方法,实现传感器增益的自标定。介绍浮地电压测量的基本原理,并分析导致耦合电容发生变化的因素,进而提出基于电容变换的自校准方法。为了减少空间杂散电场对测量系统的耦合作用,设计具有对后端电路进行等电位屏蔽的传感器探头,并选取合理的电路参数。搭建实验平台进行幅值精度、相位精度、电场屏蔽抗干扰、不同高度适应性测试。实验结果显示:电压幅值最大相对误差为1.99%,相位绝对误差为0.51°;等电位探头对外界噪声具有屏蔽作用;针对传感器不同高度所重构的待测电压最大相对误差为1.66%。

基于谐波注入法的差分式非接触电压测量

当前基于电容耦合的传感器尚无有效、便捷的耦合电容动态校准方法,影响测量精度。因此,提出了基于谐波注入的差分式非接触电压测量方法,首先,利用感应探头与跨阻运算放大器将基频信号引入测量系统;其次,通过屏蔽罩,减小外界杂散电容变化带来的干扰,改进探头并引入差分式电路结构,消除运放输入电容的影响;再次,对测量电路注入谐波,并利用离散傅里叶变换(discrete Fourier transformation,DFT)实现对响应信号中基波信号与谐波信号的提取,通过计算谐波源与谐波响应信号的比值,求解出耦合电容参数,实现其动态校准;最后,将校准的电容参数代入基波方程,实现基波电压信号的测量。通过仿真结果表明,所提的测量方法可在10 kV的应用场景中满足对变化的耦合电容校正要求,且最大的电压测量误差小于0.4%。

基于FPGA的高分辨率电容检测系统设计

针对环境湿度可以改变湿敏电容的容值这一特性,提出了一种基于现场可编程门阵列(FPGA)的高分辨率电容检测系统设计方法,对系统方案、数据采集、误差来源进行了全面的分析。文中使用电容-频率电路将电容的容值变化转化为脉冲信号的持续时间。利用FPGA设计时间间隔测量电路,使用系统时钟控制的同步计数器保证整个检测电路的量程大小,采用延迟单元设计延迟链以进一步提高测量分辨率。分析了测量误差来源并提出了相应解决办法。实验结果表明,该时间间隔测量电路达到了皮秒量级,可测量的脉冲信号持续时间的精度在2 s之内,可以测量皮法量级的电容变化。

基于MEMS传感器的线路电压测量方法研究

MEMS电场传感器体积小、功耗低,应用于非侵入式电压测量技术中可以有效减小装置测量体积、成本,契合当前分布式测量需求。因此该文设计了一种基于MEMS电场传感器的电压测量方案,首先介绍了MEMS电场传感器的工作原理,其次针对传感器结构特点基于电容分压原理设计了电压测量方案,并进一步分析其等效电路模型,最后对该测量方案进行了可行性和准确性测试。结果表明设计的测量方案能在1~10 kV内准确地反演工频电压,测量的最大幅值偏差为2.21%。该文提出的非侵入式电压测量方案搭载简便,能够稳定的对线路电压进行测量,为架空线路电压的实时监测提供可靠的技术手段。可以为线路电气量参数实时测量提供可靠的数据支撑。