Aluminum nitride （AIN） nanowires, serrated nanoribbons, and nanoribbons were selectively obtained through a simple chloride assisted chemical vapor deposition process. The morphologies of the products could be contr...Aluminum nitride （AIN） nanowires, serrated nanoribbons, and nanoribbons were selectively obtained through a simple chloride assisted chemical vapor deposition process. The morphologies of the products could be controlled by adjusting the deposition position and the flux of the reactant gas. The morphologies and structures of the AIN products were investigated in detail. The formation mechanism of the as-prepared different morphologies of AIN one-dimensional （ID） nanostructures was discussed on the basis of the experimental results.展开更多
The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition(PECVD)on Si substrates through using Al powder and N2 as precursors,CaF2 as fluxing medium,Au as catalyst,respectively.The as...The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition(PECVD)on Si substrates through using Al powder and N2 as precursors,CaF2 as fluxing medium,Au as catalyst,respectively.The as-grown worm-like AlN nanowires each have a polycrystalline and hexagonal wurtzite structure.Their diameters are about 300 nm,and the lengths are over 10μm.The growth mechanism of worm-like AlN nanowires is discussed.Hydrogen plasma plays a very important role in forming the polycrystalline structure and rough surfaces of worm-like AlN nanowires.The worm-like AlN nanowires exhibit an excellent field-emission(FE)property with a low turn-on field of 4.5 V/μm at a current density of 0.01 mA/cm^(2) and low threshold field of 9.9 V/μm at 1 mA/cm^(2).The emission current densities of worm-like AlN nanowires each have a good stability.The enhanced FE properties of worm-like AlN nanowires may be due to their polycrystalline and rough structure with nanosize and high aspect ratio.The excellent FE properties of worm-like AlN nanowires can be explained by a grain boundary conduction mechanism.The results demonstrate that the worm-like AlN nanowires prepared by the proposed simple and the PECVD method possesses the potential applications in photoelectric and field-emission devices.展开更多
基金the National Natural Science Foundation of China under grant Nos.10674138 and 20571022.
文摘Aluminum nitride （AIN） nanowires, serrated nanoribbons, and nanoribbons were selectively obtained through a simple chloride assisted chemical vapor deposition process. The morphologies of the products could be controlled by adjusting the deposition position and the flux of the reactant gas. The morphologies and structures of the AIN products were investigated in detail. The formation mechanism of the as-prepared different morphologies of AIN one-dimensional （ID） nanostructures was discussed on the basis of the experimental results.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11774017 and 51761135129).
文摘The worm-like AlN nanowires are fabricated by the plasma-enhanced chemical vapor deposition(PECVD)on Si substrates through using Al powder and N2 as precursors,CaF2 as fluxing medium,Au as catalyst,respectively.The as-grown worm-like AlN nanowires each have a polycrystalline and hexagonal wurtzite structure.Their diameters are about 300 nm,and the lengths are over 10μm.The growth mechanism of worm-like AlN nanowires is discussed.Hydrogen plasma plays a very important role in forming the polycrystalline structure and rough surfaces of worm-like AlN nanowires.The worm-like AlN nanowires exhibit an excellent field-emission(FE)property with a low turn-on field of 4.5 V/μm at a current density of 0.01 mA/cm^(2) and low threshold field of 9.9 V/μm at 1 mA/cm^(2).The emission current densities of worm-like AlN nanowires each have a good stability.The enhanced FE properties of worm-like AlN nanowires may be due to their polycrystalline and rough structure with nanosize and high aspect ratio.The excellent FE properties of worm-like AlN nanowires can be explained by a grain boundary conduction mechanism.The results demonstrate that the worm-like AlN nanowires prepared by the proposed simple and the PECVD method possesses the potential applications in photoelectric and field-emission devices.
