Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very l...Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier（OTA） with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor（CMOS） process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.展开更多
This paper presents two schemes of high performance CMOS current mirror, one of them is used for operational tran-sconductance amplifier (OTA) in analog VLSI systems. The linearity, output impedance, bandwidth and acc...This paper presents two schemes of high performance CMOS current mirror, one of them is used for operational tran-sconductance amplifier (OTA) in analog VLSI systems. The linearity, output impedance, bandwidth and accuracy are the most parameters to determine the performance of the current mirror. Here a comparison of two architectures based on same architecture of the amplifier is presented. This comparison includes: linearity, output impedance, bandwidth and accuracy. These two circuits are validated with simulation in technology AMS 0.35 μm. An operational amplifier based on the adapted current mirror is proposed. Its frequency analysis with large bandwidth is validated with the same technology.展开更多
This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that is able to operate with a single supply voltage as low as 0.4 V. The proposed circuit is based on...This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that is able to operate with a single supply voltage as low as 0.4 V. The proposed circuit is based on the bulk-driven technique and use of cross-coupled self-cascode pairs that boosts the differential DC gain. The stability condition of this structure for the DC gain is considered by definition of two coefficients to cancel out a controllable percentage of the denominator. This expression for stability condition yield optimized value for the DC gain. Also, as the principle of operation of the proposed technique relies on matching conditions, Monte Carlo analyzes are considered to study of the behavior of the proposed circuit against mismatches. The designed P-OTA have a DC gain of 64 dB, 212 KHz unity gain bandwidth, 57phase margin that is loaded by 10 pF differential capacitive loads, while consume only 16 μW. Eventually, from the proposed P-OTA, a low-power Sample and Hold (S/H) circuit with sampling frequency of 10 KS/s has been designed and simulated. The correct functionality for this configuration is verified from –30℃ to 70℃. The simulated data presented is obtained using the HSPICE Environment and is valid for the 90 nm triple-well CMOS process.展开更多
基金supported in part by the National Natural Science Foundation of China under Grant No.61274027the National Key Laboratory of Analog Integrated Circuit under Grant No.9140c90503140c09048
文摘Today, along with the prevalent use of portable equipment, wireless, and other battery powered systems, the demand for amplifiers with a high gain-bandwidth product（GBW）, slew rate（SR）, and at the same time very low static power dissipation is growing. In this work, an operational transconductance amplifier（OTA） with an enhanced SR is proposed. By inserting a sensing resistor in the input port of the current mirror in the OTA, the voltage drop across the resistor is converted into an output current containing a term in proportion to the square of the voltage, and then the SR of the proposed OTA is significantly enhanced and the current dissipation can be reduced. The proposed OTA is designed and simulated with a 0.5μm complementary metal oxide semiconductor（CMOS） process. The simulation results show that the SR is 4.54V/μs, increased by 8.25 times than that of the conventional design, while the current dissipation is only 87.3%.
文摘This paper presents two schemes of high performance CMOS current mirror, one of them is used for operational tran-sconductance amplifier (OTA) in analog VLSI systems. The linearity, output impedance, bandwidth and accuracy are the most parameters to determine the performance of the current mirror. Here a comparison of two architectures based on same architecture of the amplifier is presented. This comparison includes: linearity, output impedance, bandwidth and accuracy. These two circuits are validated with simulation in technology AMS 0.35 μm. An operational amplifier based on the adapted current mirror is proposed. Its frequency analysis with large bandwidth is validated with the same technology.
文摘This paper presents the design of an ultra low-voltage (ULV) pseudo operational transconductance amplifier (P-OTA) that is able to operate with a single supply voltage as low as 0.4 V. The proposed circuit is based on the bulk-driven technique and use of cross-coupled self-cascode pairs that boosts the differential DC gain. The stability condition of this structure for the DC gain is considered by definition of two coefficients to cancel out a controllable percentage of the denominator. This expression for stability condition yield optimized value for the DC gain. Also, as the principle of operation of the proposed technique relies on matching conditions, Monte Carlo analyzes are considered to study of the behavior of the proposed circuit against mismatches. The designed P-OTA have a DC gain of 64 dB, 212 KHz unity gain bandwidth, 57phase margin that is loaded by 10 pF differential capacitive loads, while consume only 16 μW. Eventually, from the proposed P-OTA, a low-power Sample and Hold (S/H) circuit with sampling frequency of 10 KS/s has been designed and simulated. The correct functionality for this configuration is verified from –30℃ to 70℃. The simulated data presented is obtained using the HSPICE Environment and is valid for the 90 nm triple-well CMOS process.
