The effects of Ga N/In Ga N asymmetric lower waveguide(LWG)layers on photoelectrical properties of In Ga N multiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investig...The effects of Ga N/In Ga N asymmetric lower waveguide(LWG)layers on photoelectrical properties of In Ga N multiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of In Ga N insertion layer(In Ga N-IL)between the Ga N lower waveguide layer and the quantum wells,which is achieved with the Crosslight Device Simulation Software(PIC3D,Crosslight Software Inc.).The optimal thickness and the indium content of the In Ga N-IL in lower waveguide layers are found to be 300 nm and 4%,respectively.The thickness of In Ga N-IL predominantly affects the output power and the optical field distribution in comparison with the indium content,and the highest output power is achieved to be 1.25 times that of the reference structure(symmetric Ga N waveguide),which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells.Furthermore,when the thickness and indium content of In Ga N-IL both reach a higher level,the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor(OCF)related to the concentrated optical field in the lower waveguide.展开更多
We develop a quantum key distribution (QKD) system with fast active optical path length compensation. A rapid and reliable active optical path length compensation scheme is proposed and applied to a plug-and-play QKD ...We develop a quantum key distribution (QKD) system with fast active optical path length compensation. A rapid and reliable active optical path length compensation scheme is proposed and applied to a plug-and-play QKD system. The system monitors changes in key rates and controls it is own operation automatically. The system achieves its optimal performance within three seconds of operation, which includes a sifted key rate of 5.5 kbps and a quantum bit error rate of less than 2% after an abrupt temperature variation along the 25 km quantum channel. The system also operates well over a 24 h period while completing more than 60 active optical path length compensations.展开更多
基金the National Natural Science Foundation of China(Grant Nos.62004180 and 61805218)the Science Challenge Project,China(Grant No.TZ20160032-1)the National Key Research and Development Program of China(Grant Nos.2017YFB0403100 and 2017YFB0403103)。
文摘The effects of Ga N/In Ga N asymmetric lower waveguide(LWG)layers on photoelectrical properties of In Ga N multiple quantum well laser diodes(LDs)with an emission wavelength of around 416 nm are theoretically investigated by tuning the thickness and the indium content of In Ga N insertion layer(In Ga N-IL)between the Ga N lower waveguide layer and the quantum wells,which is achieved with the Crosslight Device Simulation Software(PIC3D,Crosslight Software Inc.).The optimal thickness and the indium content of the In Ga N-IL in lower waveguide layers are found to be 300 nm and 4%,respectively.The thickness of In Ga N-IL predominantly affects the output power and the optical field distribution in comparison with the indium content,and the highest output power is achieved to be 1.25 times that of the reference structure(symmetric Ga N waveguide),which is attributed to the reduced optical absorption loss as well as the concentrated optical field nearby quantum wells.Furthermore,when the thickness and indium content of In Ga N-IL both reach a higher level,the performance of asymmetric quantum wells LDs will be weakened rapidly due to the obvious decrease of optical confinement factor(OCF)related to the concentrated optical field in the lower waveguide.
基金was supported by the ICT R&D programs of Ministry of Science, ICT and Future Planning/Institute for Information & Communications Technology Promotion (Grant No. B0101-16-1355)the Korea Institute of Science and Technology research program (Grant No. 2E27231)Korea Institute of Science and Technology-Electronics And Telecommunications Research Institute research program (Grant No. 2V05340)
文摘We develop a quantum key distribution (QKD) system with fast active optical path length compensation. A rapid and reliable active optical path length compensation scheme is proposed and applied to a plug-and-play QKD system. The system monitors changes in key rates and controls it is own operation automatically. The system achieves its optimal performance within three seconds of operation, which includes a sifted key rate of 5.5 kbps and a quantum bit error rate of less than 2% after an abrupt temperature variation along the 25 km quantum channel. The system also operates well over a 24 h period while completing more than 60 active optical path length compensations.
