An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spotsize converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology. A 1550-1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved. The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°× 18.0°, respectively, resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

Combined optical fiber interferometric sensors for the detection of acoustic emission

A type of combined optical fiber interferometric acoustic emission sensor is proposed. The sensor can be independent on the laser source and make light interference by matching the lengths of two arms,so it can be used to monitor the health of large structure. Theoretical analyses indicate that the system can be equivalent to the Michelson interferometer with two optical fiber loop reflectors,and its sensitivity has been remarkably increased because of the decrease of the losses of light energy. PZT is powered by DC regulator to control the operating point of the system,so the system can accurately detect feeble vibration which is generated by ultrasonic waves propagating on the surface of solid. The amplitude and the frequency of feeble vibration signal are obtained by detecting the output light intensity of interferometer and using Fourier transform technique. The results indicate that the system can be used to detect the acoustic emission signals by the frequency characteristics.

Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs

A semiconductor optical amplifier gate based on tensile strained quasi bulk InGaAs is developed.At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band filling effect.Moreover,the most important is that very low polarization dependence of gain (<0 7dB),fiber to fiber lossless operation current (70～90mA) and a high extinction ratio (>50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm) and the whole L band (1570～1610nm).The gating time is also improved by decreasing carrier lifetime.The wide band polarization insensitive SOA gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.

A High Efficiency Wavelength Conversion Scheme Based on Four Wave Minxing in a Semiconductor Optical Amplifier

A new approach of all optical wavelength converter based on four wave mixing (FWM) in a semiconductor optical amplifier (SOA) with the conjugate wave reflected by a fiber Bragg grating (FBG) and then amplified by the SOA is reported. By adjusting the pump power, the conversion efficiency could be improved 7～10dB with signal to background noise ratio (SBR) deteriorated 1～2dB, compared with traditional single pump four wave mixing.

All-Optical Sampling Using Nonlinear Polarization Rotation in a Single Semiconductor Optical Amplifier

We propose a novel all-optical sampling method using nonlinear polarization rotation in a semiconductor optical amplifier. A rate-equation model capable of describing the all-optical sampling mechanism is presented in this paper. Based on this model, we investigate the optimized operating parameters of the proposed system by simulating the output intensity of the probe light as functions of the input polarization angle, the phase induced by the polarization controller, and the ori- entation of the polarization beam splitter. The simulated results show that we can obtain a good linear slope and a large linear dynamic range,which is suitable for all-optical sampling. The operating power of the pump light can be less than lmW. The presented all-optical sampling method can potentially operate at a sampling rate up to hundreds GS/s and needs low optical power.

Semiconductor Optical Amplifier (SOA)-Fiber Ring Laser and Its Application to Stress Sensing

We have developed a novel optical fiber ring laser using a semiconductor optical amplifier (SOA) as the gain medium, and taking advantage of polarization anisotropy of its gain. The frequency difference of the bi-directional laser is controlled by birefringence which is introduced in the ring laser cavity. The beat frequency generated by combining two counter-propagating oscillations is proportional to the birefringence, the fiber ring laser of the present study is, therefore, applicable to the fiber sensor. The sensing signal is obtained in a frequency domain with the material which causes the retardation change by a physical phenomenon to be measured. For the application to stress sensing, the present laser was investigated with a photoelastic material.

The Variables and Invariants in the Evolution of Logic Optical Lithography Process

Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node.

Semiconductor Optical Amplifier and Gain Chip Used in Wavelength Tunable Lasers

The design concept of semiconductor optical amplifier(SOA)and gain chip used in wavelength tunable lasers(TL)is discussed in this paper.The design concept is similar to that of a conventional SOA or a laser;however,there are a few different points.An SOA in front of the tunable laser should be polarization dependent and has low optical confinement factor.To obtain wide gain bandwidth at the threshold current,the gain chip used in the tunable laser cavity should be something between SOA and fixed-wavelength laser design,while the fixed-wavelength laser has high optical confinement factor.Detailed discussion is given with basic equations and some simulation results on saturation power of the SOA and gain bandwidth of gain chip are shown.

Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μm Polarization Independent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.55μm windows polarization-independent semiconductor optical amplifier is reported.The valence-band structure of the MQW is calculated by using k·p method,in which 6×6 Luttinger effective-mass Hamiltonian is taken into account.The polarization dependent optical gain is calculated with various well width,strain,and carrier density.

Towards 640 Gbit/s wavelength conversion based on nonlinear polarization rotation in a semiconductor optical amplifier

Taking into account ultra-fast carrier dynamics, this paper models 640 Gbit/s wavelength conversion scheme based on nonlinear polarization rotation （NPR） in a single semiconductor optical amplifier （SOA） and investigates the performance of this kind of wavelength conversion scheme in detail. In this model, two carrier temperature equations are introduced to substitute two energy density equations, which reduce the complexity of calculation in comparison with the previous model. The temporary gain and phase shift dynamics induced by ultra-short optical pulses are numerically simulated and the simulated results are qualitatively in good agreement with reported experimental results. Simulated results show that non-inverted and inverted 640 Gbit/s wavelength conversions based on NPR are achieved with clear open eye diagrams. To further investigate the performance of the non-inverted wavelength conversion scheme, the dependence of output extinction ratio （ER） on some key parameters used in simulation is illustrated. Furthermore, simulated analyses show that high performance non-inverted wavelength conversion based on NPR can be achieved by using a red-shifted filtering scheme.

Quantum-dot Semiconductor Optical Amplifiers in State Space Model

A state space model(SSM) is derived for quantum-dot semiconductor optical amplifiers(QD-SOAs).Rate equations of QD-SOA are formulated in the form of state update equations,where average occupation probabilities along QD-SOA cavity are considered as state variables of the system.Simulations show that SSM calculates QD-SOA′s static and dynamic characteristics with high accuracy.

Computer Program Calculation for Distortion of Wide-Band Track and Hold Amplifier

Tow different computer calculation methods for distortion of the wide-band diode bridge track and hold amplifier (THA) are presented based on a high frequency Schottky diode model. One of the computer programs calculates the distortion of weekly nonlinear THA based on the KCL and the nonlinear-current method. The other calculates the weekly nonlinear distortion by using a Volterra series method and a nodal formulation. Comparative calculation results for the diode bridge THA have shown good agreement with these two computer program calculation methods, whereas the overall computational efficiency of the nonlinear-current method is better than that of the nodal formulation method in a special evaluation.

All-optical XNOR and AND gates simultaneously realized in a single semiconductor optical amplifier with improved dynamics

All-optical XNOR and AND logic gates using four-wave mixing （FWM） and cross-gain modulation （XGM） in a single semiconductor optical amplifier （SOA） with improved dynamics are simultaneously realized. By numerical simulation, the effects of the input optical wave powers and injection current on the critical factors of the logic gate performances, such as the ON-OFF contrast ratio, the power-output level of the logic ＇1＇, and the difference between power outputs of the logic ＇1＇, are investigated in detail. In addition, the effect of the counter-propagating CW pump on the gain recovery is analysed.

Semiconductor optical amplifier used as regenerator for degraded differential phase-shift keying signals

Phase and amplitude regeneration are necessary for degraded differential phase-shift keying communication sys- tems. This paper proposes a regenerator based on semiconductor optical amplifier for differential phase-shift keying signals. The key regeneration mechanism is theoretically analysed. The effectiveness of semiconductor optical amplifier based regenerator is demonstrated by comparing the bit error rate and eye diagrams before and after regeneration for 40-Cbit/s differential phase-shift keying 1080-km transmission systems. The results show that regeneration effects are very well. Bit error rate is tess than 10-12 with the regenerator.

Optimization of regenerator based on semiconductor optical amplifier for degraded differential phase shift keying signal

Real time phase regeneration is necessary for degraded phase modulation format optical communication systems. A regenerator based on the discrimitive gain effect of a semiconductor optical amplifier was proposed in recent years. In this paper, for this type of regenerator, its optimal working condition is found by solving the dynamic equations which describe the variance of the optical field and carrier density in the semiconductor optical amplifier by the finite difference method. The results show that the optimal improvement of signal Q factor can reach more than 2.2 dB.

10-Gb/s Transmission in WDM PON Employing Reflective Semiconductor Optical Amplifier and Fibre Bragg Grating Equaliser

We propose a 10-Gb/s Wavelength- Division-Multiplexed Passive Optical Network （WDM-PON） scheme with upstream transmi- ssion employing Reflective Semiconductor Op- tical Amplifier （RSOA） and Fibre Bragg Gra- ting （FBG） optical equaliser. Transmissions of 10-Gb/s non return-to-zero signals using a 1.2- GHz RSOA and FBG optical equaliser with different setups are demonstrated. Significant performance improvement and 40-kin standard single mode fibre transmission are achieved using FBG optical equaliser and Remotely Pum- ped Erbium-Doped Fibre Amplifier （RP-EDFA）, where they are used to equalise the output of the band-limited RSOA and amplify the seed light and upstream signal, respectively.

Impact of Channel Dynamics, Combined Nonlinearities and ASE Noise on Transmission Performance of all Optical Star WDM Networks

For all optical Wavelength Division Multiplexing (WDM) network based on G.653 fibers, we investigate the quality factor deterioration due to combined nonlinear effects and Amplified spontaneous emission (ASE) noise for system parameters based on ITU-T Recommendation G.692. The investigation: (a) emphasizes on stimulated Raman scattering (SRS) and four wave mixing (FWM) effects which are the dominant nonlinearities known to limit WDM system performance and (b) accounts for beating between nonlinearities and beating between ASE noise and nonlinearities. Using the proposed model, performance of the worst affected channels due to SRS and FWM is compared and the results indicate that the worst affected channel due to SRS performs better and hence must be preferred for reliable and efficient transmission over the worst affected channel due to FWM. Further, the results suggest that to achieve a desired error rate (quality factor);there exists an optimal value of channel spacing for a given number of channels. The proposed theoretical model is also validated through extensive simulations over Rsoft OptSimTM simulator and the two sets of results are found to match, indicating that the proposed model accurately calculates the quality factor of the all optical WDM network.

恒河猴慢性青光眼模型的建立及相关生物学特性

目的建立两种激光光凝的恒河猴慢性高眼压性青光眼模型,评价模型眼的相关生物学特性。方法成年恒河猴15只,分别采用半导体倍频532激光和氩激光,在房角镜下对功能小梁网区行360°光凝。对其中7只恒河猴分别采用A超、视网膜断层成像仪和视网膜血流仪进行模型眼和另侧对照眼的眼球及视盘形态、血流参数的检测。结果两种光凝模式相比,眼压升高后第4周,倍频532激光组平均眼压为48.4±10.3mmHg,氩激光组平均眼压为44.2±7.0mmHg,倍频532激光组与氩激光组的三次光凝成功率的差异无显著性意义。除视盘面积外,恒河猴模型眼的视杯形态指数、杯盘面积比、盘沿面积、视网膜神经纤维层的平均厚度,与对照眼相比差异有极显著性意义。眼轴和前房深度与对照眼相比差异有显著性意义。筛板血流量、血流速度和红细胞移动速率与对照眼相比差异无显著性意义。结论两种激光光凝恒河猴小梁网均可用以建立慢性高眼压性青光眼模型,模型眼出现青光眼眼底特征性的形态学改变。

A Comparison and Performance of Different Optical Switching Architectures

Optical Packet Switching (OPS) and transmission networks based on Wavelength Division Multiplexing (WDM) have been increasingly deployed in the Internet infrastructure over the last decade in order to meet the huge increasing demand for bandwidth. Several different technologies have been developed for optical packet switching such as space switches, broadcast-and-select, input buffered switches and output buffered switches. These architectures vary based on several parameters such as the way of optical buffering, the placement of optical buffers, the way of solving the external blocking inherited from switching technologies in general and the components used to implement the WDM. This study surveys most of the exiting optical packet switching architectures. A simulation-based comparison of input buffered and output buffered architectures is presented. The performance analysis of the selected two architectures is derived using simulation program and compared at different scenarios. We found that the output buffered architectures give better performance than input buffered architectures. The simulation results show that the-broadcast-and-select architecture is attractive in terms that it has lees number of components compared to other switches.