Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the opt...Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated展开更多
Aluminum-doped zinc oxide/platinum/fluorine-doped tin oxide（AZO/Pt/FTO） trilayer films were prepared by sputtering 5-nm-thick Pt layers and 150-nm-thick AZO layers in sequence on commercial FTO glass.The effects of ...Aluminum-doped zinc oxide/platinum/fluorine-doped tin oxide（AZO/Pt/FTO） trilayer films were prepared by sputtering 5-nm-thick Pt layers and 150-nm-thick AZO layers in sequence on commercial FTO glass.The effects of onestep annealing and layer-by-layer annealing on the morphology,structure and photoelectric properties of the AZO/Pt/FTO trilayer films were comparatively analyzed.It is found that the both annealing approaches increased the grain size and improved the crystallinity of the films,leading to enhancement in transmittance and conductivity.However,layer-by-layer annealing led to the formation of quasi-continuous or continuous AZO layers,different from the sparsely distributed AZO particles brought about by one-step annealing,resulting in excellent optical and electrical properties.Specifically,after layer-by-layer annealing at 400 ℃ for both Pt and AZO layers,the AZO/Pt/FTO trilayer film showed an increase in average transmittance from 71.3% to 85.3% and a decrease in sheet resistance from 7.5 to 5.6 Ω/□,leading to the highest figure of merit of 3.64 × 10^（-2） Ω^（-1）.展开更多
GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in a...GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient antimony.The annealed samples have been studied by Hall effect measurement,infrared（IR）optical transmission,Glow discharge mass spectroscopy（GDMS） and photoluminescence（PL） spectroscopy.After annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR transmission.Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level.The mechanism of the variation of the defect and its influence on the material properties are discussed.展开更多
文摘Transparent conductive cadmium indium oxide films (CdIn2O4) were prepared by r.f. reactive sputtering from Cd-In alloy targets under an Ar-O2 atmosphere. Electrical conductivity of the order of 105Ω-1.m-1 and the optical transmission as high as 94% are easily attained by postdeposition annealing treatment. The effects of oxygen concentration in the reactive gas mixture and post-deposition annealing treatment on the optical transmittance as well as optical parameters, such as refractive index (n), extinction coefficient (k), real part (ε') and imaginary part (ε') of the dielectric constant, were studied in the visible and near-infrared region. The highfrequency dielectric constant ε∞ the plasma frequency ωP, and the conduction band effective mass mc of different samples were also investigated
基金supported by the National Key Basic Research Development Program of China(No. 2011CB013000)the Jiangsu Province Research Innovation Program of College Graduate(No.CXZZ13_0663)+1 种基金the Senior Talent Research Foundation of Jiangsu University(No.13JDG045)the Open Research Fund Program of Jiangsu Provincial Key Laboratory of Center for Photon Manufacturing Science and Technology(No. GZ201307)
文摘Aluminum-doped zinc oxide/platinum/fluorine-doped tin oxide（AZO/Pt/FTO） trilayer films were prepared by sputtering 5-nm-thick Pt layers and 150-nm-thick AZO layers in sequence on commercial FTO glass.The effects of onestep annealing and layer-by-layer annealing on the morphology,structure and photoelectric properties of the AZO/Pt/FTO trilayer films were comparatively analyzed.It is found that the both annealing approaches increased the grain size and improved the crystallinity of the films,leading to enhancement in transmittance and conductivity.However,layer-by-layer annealing led to the formation of quasi-continuous or continuous AZO layers,different from the sparsely distributed AZO particles brought about by one-step annealing,resulting in excellent optical and electrical properties.Specifically,after layer-by-layer annealing at 400 ℃ for both Pt and AZO layers,the AZO/Pt/FTO trilayer film showed an increase in average transmittance from 71.3% to 85.3% and a decrease in sheet resistance from 7.5 to 5.6 Ω/□,leading to the highest figure of merit of 3.64 × 10^（-2） Ω^（-1）.
基金Project supported by the National Natural Science Foundation of China(Nos.61474104,61504131)
文摘GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient antimony.The annealed samples have been studied by Hall effect measurement,infrared（IR）optical transmission,Glow discharge mass spectroscopy（GDMS） and photoluminescence（PL） spectroscopy.After annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR transmission.Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level.The mechanism of the variation of the defect and its influence on the material properties are discussed.
