Applied Optics to Engineering Photonics： a Retrospective

This paper provides a short overview of the time I spent as a member of the Applied Optics Group at the University of Kent （1985-1989） followed by a review of my research during my time at Cranfield University （1989 to date）.

Research Progress in the Key Device and Technology for Fiber Optic Sensor Network

The recent research progress in the key device and technology of the fiber optic sensor network （FOSN） is introduced in this paper. An architecture of the sensor optical passive network （SPON）, by employing hybrid wavelength division multiplexing/time division multiplexing （WDM/TDM） techniques similar to the fiber communication passive optical network （PON）, is proposed. The network topology scheme of a hybrid TDM/WDM/FDM （frequency division multiplexing） three-dimension fiber optic sensing system for achieving ultra-large capacity, long distance, and high resolution sensing performance is performed and analyzed. As the most important device of the FOSN, several kinds of light source are developed, including the wideband multi-wavelength fiber laser operating at C band, switchable and tunable 2 μm multi-wavelength fiber lasers, ultra-fast mode-locked fiber laser, as well as the optical wideband chaos source, which have very good application prospects in the FOSN. Meanwhile, intelligent management techniques for the FOSN including wideband spectrum demodulation of the sensing signals and real-time fault monitoring of fiber links are presented. Moreover, several typical applications of the FOSN are also discussed, such as the fiber optic gas sensing network, fiber optic acoustic sensing network, and strain/dynamic strain sensing network.

Terahertz radiation-enhanced-emission-of-fluorescence

Terahertz （THz） wave science and technology have been found countless applications in biomedical imaging, security screening, and non-destructive testing as they approach maturity. However, due to the challenge of high ambient moisture absorption, the development of remote open-air broadband THz spectroscopy technology is lagging behind the compelling need that exists in homeland security, astronomy and environmental monitoring. Furthermore, the underlying physical mechanisms behind the interaction between the THz wave and laserinduced plasma which responds strongly to electromag- netic waves have not been fully understood. This review aims to explain the light-plasma interaction at THz frequencies within a semiclassical framework along with experimental study of the femtosecond-laser- induced nitrogen plasma fluorescence under the illumination of single-cycle THz pulses. The results indicate that THz-radiation-enhanced-emission-of-fluorescence （THz- REEF） is dominated by electron kinetics in the THz field and the electron-impact excitation of gas molecules/ions. The information of the time-dependent THz field can be recovered from the measured time-resolved THz-REEF from single-color laser induced plasma with the help of the bias as local oscillator. The calculations and experimental verification lead to complete understanding of the science behind these effects and push forward to extend their capabilities in related applications such as remote THz sensing, plasma diagnostics and ultrafast photoluminescence modulation. Systematic studies in selected gases including neon, argon, krypton, xenon, methane （CH4）, ethane （C2H6）, propane （C3H8）, and n-butane （C4Hlo） gases were performed to obtain an improved understanding of the THz-REEF. The dependences of the enhanced fluorescence on the THz field, laser excitation intensity, gas pressure, and intrinsic atomic properties were experimentally characterized. Both narrow line emission and broad continuum emission of the gas plasma were enhanced by the THz field. Their fluorescence enhancement ratios and time-resolved enhanced fluorescence were largely dependent on the scattering cross section and ionization potential of atoms. For the first time, we demonstrated a novel ＇all-optical＇ technique of broadband THz wave remote sensing by coherently manipulating the fluorescence emission from asymmetrically ionized gas plasma that interacted with THz waves. By studying the ultrafast electron dynamics under the single cycle THz radiation, we found that the fluorescence emission from laser-induced air plasma was highly dependent on the THz electric field and the symmetry of the electron drift velocity distribution created by two-color laser fields. The time-resolved THz-REEF can be tailored by switching the relative two-color phase and laser polarizations. Owing to the high atmospheric transparency and omni-directional emission pattern of fluorescence, this technique can be used to measure THz pulses at standoff distances with minimal water vapor absorption and unlimited directionality for optical signal collection. The coherent THz wave detection at a distance of 10 m had been demonstrated. The combination of this method and previously demonstrated remote THz genera- tion would eventually make remote THz spectroscopy available. We also introduced a unique plasma diagnostic method utilizing the THz-wave-enhanced fluorescence emission from the excited atoms or molecules. The electron relaxation time and plasma density were deduced through applying the electron impact excitation/ionization and electron-ion recombination processes to the measured time-delay-dependent enhanced fluorescence. The electron collision dynamics of nitrogen plasma excited at different gas pressures and laser pulse energies were systematically investigated. This plasma diagnostic method offers picosecond temporal resolution and is capable of omnidirectional optical signal collection. The ultrafast quenching dynamics of laser-pulseinduced photoluminescence in semiconductors under the radiation of single-cycle THz pulses was studied. It was found that the quenching in both cadmium telluride （CdTe） and gallium arsenide （GaAs） was linearly proportional to the intensity of incident THz waves and reaches up to 17% and 4% respectively at the peak intensity of 13 MW/cm2. The THz-wave-induced heating of the carriers and lattice and the subsequent decreased efficiency of photocarrier generation and recombination were most likely to be responsible for the quenching. This is potentially useful for the applications ofa non-invasive ultrafast light modulator for photoluminescence devices with picoseconds switching time in the fields of the light-emitting devices and optical communication.