Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold perf...Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.展开更多
In this Letter, we discuss Raman–Nath acousto-optic diffraction, and a new model of Raman–Nath acousto-optic diffraction is presented. The model is based on the individual and simultaneous occurrences of phase-grati...In this Letter, we discuss Raman–Nath acousto-optic diffraction, and a new model of Raman–Nath acousto-optic diffraction is presented. The model is based on the individual and simultaneous occurrences of phase-grating diffraction and the Doppler effect and optical phase modulation and photon–phonon scattering. We find that the optical phase modulation can cause temporal and spatial fluctuations of the diffracted light power escaping from the acoustic field.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)
文摘Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.
基金supported by the Science and Technology Program of Fujian Province of China (No. 2015J01301)the National Natural Science Foundation of China (No. 61575043)
文摘In this Letter, we discuss Raman–Nath acousto-optic diffraction, and a new model of Raman–Nath acousto-optic diffraction is presented. The model is based on the individual and simultaneous occurrences of phase-grating diffraction and the Doppler effect and optical phase modulation and photon–phonon scattering. We find that the optical phase modulation can cause temporal and spatial fluctuations of the diffracted light power escaping from the acoustic field.
