Electron beam（EB） irradiation experiments on Au/ITO and ITO/Au/ITO multilayer thin films are reported.The structure and the optical-electrical properties of the samples were investigated by X-ray diffraction,atomic ...Electron beam（EB） irradiation experiments on Au/ITO and ITO/Au/ITO multilayer thin films are reported.The structure and the optical-electrical properties of the samples were investigated by X-ray diffraction,atomic force microscopy, four-point probe resistivity measurement system, and UV–vis-NIR double beam spectrometer, respectively. Those results show that the EB irradiation has the effects of improving the crystalline of samples, widening the optical band gap of both thin films, reducing the sheet resistance,and improving the transmittance of samples.展开更多
Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The stru...Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.展开更多
Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Tr...Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.展开更多
ITO films with thicknesses (134+8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorph...ITO films with thicknesses (134+8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorphous, but crystallized with annealing at elevated temperatures, as demonstrated by X-ray diffraction. The transmittance spectra of all samples were obtained and subsequently simulated by means of spectroscopic ellipsometry. The optical constants n and k of the films were extracted. With the annealing temperature increasing, the optical constants n and k of the films firstly decreased then increased in the whole investigated wavelength range. The optical band gaps of all films were evaluated and they varied between 3.74 and 3.93 eV.展开更多
Cadmium tin oxide Cd2SnO4 thin films with a thickness of 228.5 nm were prepared by RF magnetron sputtering technique on glass substrates at room temperature. AFM has been utilized to study the morphology of these film...Cadmium tin oxide Cd2SnO4 thin films with a thickness of 228.5 nm were prepared by RF magnetron sputtering technique on glass substrates at room temperature. AFM has been utilized to study the morphology of these films as a function of annealing temperature at the nanoscale. The optical properties of these films, such as the transmittance, T(λ), and reflectance, R(λ), have been studied as a function of annealing temperature. The optical constants, such as optical energy gap, width of the band tails of the localized states, refractive index, oscillatory energy, dispersion energy, real and imaginary parts of both dielectric constant and optical conductivity have been found to be affected by changing the annealing temperature of the films.展开更多
The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the v...The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.展开更多
ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assiste...ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.展开更多
Polycrystalline zinc oxide (ZnO) thin films have been deposited at 450°C onto glass and silicon substrates by pulsed laser deposition technique (PLD). The used source was a KrF excimer laser (248 nm, 25 ns, 5 Hz,...Polycrystalline zinc oxide (ZnO) thin films have been deposited at 450°C onto glass and silicon substrates by pulsed laser deposition technique (PLD). The used source was a KrF excimer laser (248 nm, 25 ns, 5 Hz, 2 J/cm2). The effects of glass and silicon substrates on structural and optical properties of ZnO films have been investigated. X-ray diffraction patterns showed that ZnO films are polycrystalline with a hexagonal wurtzite—type structure with a strong (103) orientation and have a good crystallinity on monocrystalline Si(100) substrate. The thickness and compositional depth profile were studied by Rutherford Backscattering spectrometry (RBS). The average transmittance of ZnO films deposited on glass substrate in the visible range is 70%.展开更多
The Ga203/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga203 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Form...The Ga203/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga203 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa204 film is achieved via the annealing of the Ga203/ZnO multilayer film. The influences of original Ga203 sublayer thickness on the optical and structural properties of Ga203/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga203 sublayer, the optical band-gap of Ga203/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga203 and ZnGa204.展开更多
Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spect...Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spectrum were employed to analyze the structure and optical character of the films.The strain and stress in films, as well as the packing density are calculated in terms of refractive index of films measured with an elliptic polarization analyzer.It is the deposition conditions that have great effects on the structural and optical properties of ZnO films.Under the optimal conditions,the only evident peak in XRD spectrum was (002) peak with the full width at half maximum (FWHM) of 0.20° showing the grain size of 42.8 nm.The packing density,the stress in (002) plane and the average optical transmittance in the visible region were about 97%,-1.06×10~9 N/m^2 and 92%, respectively.展开更多
Ultrathin Ge films with thickness of about 15 nm at different deposition temperatures were prepared by electron beam evaporation.Spectral measurement results showed that as the deposition temperature increased from 10...Ultrathin Ge films with thickness of about 15 nm at different deposition temperatures were prepared by electron beam evaporation.Spectral measurement results showed that as the deposition temperature increased from 100°C to 300°C,the transmittance of the films in the wavelength range from 350 nm to 2100 nm decreased.After annealing in air at 500°C,the transmittance significantly increased and approached that of uncoated fused quartz.Based on the Tauc plot method and Mott-Davis-Paracrystalline model,the optical band gap of Ge films was calculated and interpreted.The difference in optical band gap reveals that the deposition temperature has an effect on the optical band gap before annealing,while having little effect on the optical band gap after annealing.Furthermore,due to oxidation of Ge films,the optical band gap was significantly increased to^5.7 eV after annealing.展开更多
基金supported financially by the National Key Research and Development Program of China (No. 2016YFB1102303)the National Basic Research Program of China (973 Program) (No. 2015CB352001)the National Natural Science Foundation of China(No. 61378060)
文摘Electron beam（EB） irradiation experiments on Au/ITO and ITO/Au/ITO multilayer thin films are reported.The structure and the optical-electrical properties of the samples were investigated by X-ray diffraction,atomic force microscopy, four-point probe resistivity measurement system, and UV–vis-NIR double beam spectrometer, respectively. Those results show that the EB irradiation has the effects of improving the crystalline of samples, widening the optical band gap of both thin films, reducing the sheet resistance,and improving the transmittance of samples.
基金the Program for New Century Excellent Talents in Universities, MOE, China (No. NCET-05-0764)the Tackle Key Problems on Scientific Technology Foundation of Chongqing Municipality (Nos. CSTC2005AA4006-A6 and CSTC2004AC4034)+2 种基金the Natural Science Foundation of Chongqing Municipality (No. CSTC2005BA4016)China Postdoctoral Science Foundation (No. 2005037544)the Inno-base for Graduates of Chongqing University (No. 200506Y1B0240131).
文摘Highly conductive and transparent Al-doped ZnO （AZO） thin films were prepared from a zinc target containing Al （1.5 wt.%） by direct current （DC） and radio frequency （RF） reactive magnetron sputtering. The structural, optical, and electrical properties of AZO films as-deposited and submitted to annealing treatment （at 300 and 400℃, respectively） were characterized using various techniques. The experimental results show that the properties of AZO thin films can be further improved by annealing treatment. The crystallinity of ZnO films improves after annealing treatment. The transmittances of the AZO thin films prepared by DC and RF reactive magnetron sputtering are up to 80% and 85% in the visible region, respectively. The electrical resistivity of AZO thin films prepared by DC reactive magnetron sputtering can be as low as 8.06 x 10-4 Ωcm after annealing treatment. It was also found that AZO thin films prepared by RF reactive magnetron sputtering have better structural and optical properties than that prepared by DC reactive magnetron sputtering.
基金supported by the National Natural Science Foundation of China (Grant Nos. 50942021 and 11075314)the Fundamental Research Fund for the Central Universities (Grant No. CDJXS10102207)
文摘Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temperature. The as-deposited films are annealed at different temperatures from 400℃ to 800 ℃ in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400℃ to 800℃. The band gap of the as-deposited ZnO：In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400℃. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400℃ to 800℃.
基金supported by the National Natural Science Foundation of China (Grant No. 50872001)the Research Fund for the Doctoral Program of Higher Education of China (Grant No.20060357003)+1 种基金the Higher Educational Natural Science Foundation of Anhui Province (Grant No. KJ2008B015)the Open Foundation of Anhui Key Laboratory of Information Materials and Devices, and Key Project of Anhui Province (Grant No. 05021028)
文摘ITO films with thicknesses (134+8) nm, grown on glass substrates by sputtering method, were post-annealed at the temperatures of 100, 200, 300 and 400°C for 1 h, respectively. The as-deposited ITO film was amorphous, but crystallized with annealing at elevated temperatures, as demonstrated by X-ray diffraction. The transmittance spectra of all samples were obtained and subsequently simulated by means of spectroscopic ellipsometry. The optical constants n and k of the films were extracted. With the annealing temperature increasing, the optical constants n and k of the films firstly decreased then increased in the whole investigated wavelength range. The optical band gaps of all films were evaluated and they varied between 3.74 and 3.93 eV.
文摘Cadmium tin oxide Cd2SnO4 thin films with a thickness of 228.5 nm were prepared by RF magnetron sputtering technique on glass substrates at room temperature. AFM has been utilized to study the morphology of these films as a function of annealing temperature at the nanoscale. The optical properties of these films, such as the transmittance, T(λ), and reflectance, R(λ), have been studied as a function of annealing temperature. The optical constants, such as optical energy gap, width of the band tails of the localized states, refractive index, oscillatory energy, dispersion energy, real and imaginary parts of both dielectric constant and optical conductivity have been found to be affected by changing the annealing temperature of the films.
基金supported by the National Natural Science Foundation of China(Grant Nos.61222501 and 61335004)
文摘The electrical and optical properties of the indium tin oxide （ITO）/epoxy composite exhibit dramatic variations as functions of the ITO composition and ITO particle size. Sharp increases in the conductivity in the vicinity of a critical volume fraction have been found within the framework of percolation theory. A conductive and insulating transition model is extracted by the ITO particle network in the SEM image, and verified by the resistivity dependence on the temperature. The dependence of the optical transmittance on the particle size was studied. Further decreasing the ITO particle size could further improve the percolation threshold and light transparency of the composite film.
文摘ITO （indium oxide doped with tin） thin films were deposited on glass substrates by using ITO pellet with a composition of w（In2O3）=90% and w（SnO2）=10% by electron beam evaporated with End-Hall ion source assisted without extra heating. The rate of deposition and flow rate of oxygen were measured and changed to obtain the best properties of ITO thin films. Furthermore, the post annealing process was done in vacuum at different annealing temperatures for 2 h and at 400℃ for different keeping time, respectively. The relation between optical, electrical properties and structure was discussed in detail.
文摘Polycrystalline zinc oxide (ZnO) thin films have been deposited at 450°C onto glass and silicon substrates by pulsed laser deposition technique (PLD). The used source was a KrF excimer laser (248 nm, 25 ns, 5 Hz, 2 J/cm2). The effects of glass and silicon substrates on structural and optical properties of ZnO films have been investigated. X-ray diffraction patterns showed that ZnO films are polycrystalline with a hexagonal wurtzite—type structure with a strong (103) orientation and have a good crystallinity on monocrystalline Si(100) substrate. The thickness and compositional depth profile were studied by Rutherford Backscattering spectrometry (RBS). The average transmittance of ZnO films deposited on glass substrate in the visible range is 70%.
基金Project supported by the National Natural Science Foundation of China(Grant No.10974077)the Innovation Project of Shandong Graduate Education,China(Grant No.SDYY13093)the Natural Science Foundation of Shandong Province,China(Grant No.ZR2010AL026)
文摘The Ga203/ZnO multilayer films are deposited on quartz substrates by magnetron sputtering, the thickness values of Ga203 layers are in a range of 19 nm-2.5 nm and the thickness of ZnO layer is a constant of 1 nm. Formation of spinel ZnGa204 film is achieved via the annealing of the Ga203/ZnO multilayer film. The influences of original Ga203 sublayer thickness on the optical and structural properties of Ga203/ZnO multilayer films and annealed films are studied. With the decrease of the thickness of Ga203 sublayer, the optical band-gap of Ga203/ZnO multilayer film decreases, the intensity of UV emission diminishes and the intensity of violet emission increases. The annealed film displays the enlarged optical band gap and the quenched violet emission. UV fluorescence bands are observed from Ga203 and ZnGa204.
文摘Polycrystalline ZnO films were prepared on glass wafer using Zn targets by radio frequency(RF)reactive sputtering technique under different deposition conditions.X-ray diffraction (XRD) and optical transmittance spectrum were employed to analyze the structure and optical character of the films.The strain and stress in films, as well as the packing density are calculated in terms of refractive index of films measured with an elliptic polarization analyzer.It is the deposition conditions that have great effects on the structural and optical properties of ZnO films.Under the optimal conditions,the only evident peak in XRD spectrum was (002) peak with the full width at half maximum (FWHM) of 0.20° showing the grain size of 42.8 nm.The packing density,the stress in (002) plane and the average optical transmittance in the visible region were about 97%,-1.06×10~9 N/m^2 and 92%, respectively.
基金supported by the National Key Research and Development Project of China (No. 2016YFE0104300)
文摘Ultrathin Ge films with thickness of about 15 nm at different deposition temperatures were prepared by electron beam evaporation.Spectral measurement results showed that as the deposition temperature increased from 100°C to 300°C,the transmittance of the films in the wavelength range from 350 nm to 2100 nm decreased.After annealing in air at 500°C,the transmittance significantly increased and approached that of uncoated fused quartz.Based on the Tauc plot method and Mott-Davis-Paracrystalline model,the optical band gap of Ge films was calculated and interpreted.The difference in optical band gap reveals that the deposition temperature has an effect on the optical band gap before annealing,while having little effect on the optical band gap after annealing.Furthermore,due to oxidation of Ge films,the optical band gap was significantly increased to^5.7 eV after annealing.
