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沉积参数对碳氮化硅薄膜化学结构及光学性能的影响 被引量:3
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作者 朴勇 梁宏军 +4 位作者 高鹏 丁万昱 陆文琪 马腾才 徐军 《应用光学》 CAS CSCD 2006年第4期274-280,共7页
利用微波电子回旋共振(MW-ECR)等离子体增强非平衡磁控溅射法制备了碳氮化硅(SiCN)薄膜。研究结果表明:硅靶溅射功率和氮气流量对薄膜化学结构、光学、力学等性能有很大影响。傅里叶变换红外光谱(FT-IR)和X射线光电子能谱(XPS... 利用微波电子回旋共振(MW-ECR)等离子体增强非平衡磁控溅射法制备了碳氮化硅(SiCN)薄膜。研究结果表明:硅靶溅射功率和氮气流量对薄膜化学结构、光学、力学等性能有很大影响。傅里叶变换红外光谱(FT-IR)和X射线光电子能谱(XPS)表征显示,随着硅靶溅射功率由150W增加到 350 W,薄膜中C-Si-N键含量由14.3%增加到43.6%;氮气流量的增大(2~15 sccm)易于形成更多的sp2C=N键和sp1C≡N键.在改变硅靶溅射功率和氮气流量的条件下,薄膜光学带隙最大值分别达到2.1 eV和2.8 eV。 展开更多
关键词 SiCN薄膜 微波ECR等离子体 沉积参数 光学带隙
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基于光子晶体单向传输波导的通道下路滤波器(英文) 被引量:1
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作者 任宏亮 卢瑾 +5 位作者 胡卫生 姜淳 吴哲夫 温浩 覃亚丽 周守利 《光子学报》 EI CAS CSCD 北大核心 2014年第7期1-7,共7页
基于光子晶体单向传输波导,设计了一种三端口和两种四端口结构的通道下路滤波器.为取得100%的通道下路效率,运用实时耦合模理论对这三种结构进行了分析.理论分析表明该通道下路滤波器比利用光子晶体普通介质波导设计的通道下路滤波器具... 基于光子晶体单向传输波导,设计了一种三端口和两种四端口结构的通道下路滤波器.为取得100%的通道下路效率,运用实时耦合模理论对这三种结构进行了分析.理论分析表明该通道下路滤波器比利用光子晶体普通介质波导设计的通道下路滤波器具有更简单的结构,降低了器件制作难度.用有限元方法对滤波器结构进行了数值仿真分析,仿真计算结果表明所设计的三种结构具有超过90%的通道下路效率,与理论分析结果相符合. 展开更多
关键词 集成光学 有限元方法 光子晶体 光子带隙 通道下路滤波 光子晶体单向波导 通道下路效率 耦合模理论
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Annealing effect on optical and electronic properties of silicon rich amorphous silicon-carbide films 被引量:1
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作者 Shuxin LI Yunjun RUI +2 位作者 Yunqing CAO Jun XU Kunji CHEN 《Frontiers of Optoelectronics》 2012年第1期107-111,共5页
A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optic... A series of Si-rich amorphous silicon carbide (a-SiC:H) thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8-2.4 eV by changing the gas ratio, R. Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 104 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900℃ and 1000℃. The formation of nanocrystalline silicon (nc- Si) dots in amorphous silicon carbide (a-SiC) host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence (EL) was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed. 展开更多
关键词 amorphous silicon carbide (a-SiC) opticalband gap photo-conductivity dark conductivity electro-luminescence (EL)
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