Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals Heterojunctions for Visual‑Olfactory Crossmodal Perception

The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are scarce.Here,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals heterojunctions.Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power consumption.Furthermore,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal perception.This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.

Tailoring Classical Conditioning Behavior in TiO_(2) Nanowires:ZnO QDs-Based Optoelectronic Memristors for Neuromorphic Hardware

Neuromorphic hardware equipped with associative learn-ing capabilities presents fascinating applications in the next generation of artificial intelligence.However,research into synaptic devices exhibiting complex associative learning behaviors is still nascent.Here,an optoelec-tronic memristor based on Ag/TiO_(2) Nanowires:ZnO Quantum dots/FTO was proposed and constructed to emulate the biological associative learning behaviors.Effective implementation of synaptic behaviors,including long and short-term plasticity,and learning-forgetting-relearning behaviors,were achieved in the device through the application of light and electrical stimuli.Leveraging the optoelectronic co-modulated characteristics,a simulation of neuromorphic computing was conducted,resulting in a handwriting digit recognition accuracy of 88.9%.Furthermore,a 3×7 memristor array was constructed,confirming its application in artificial visual memory.Most importantly,complex biological associative learning behaviors were emulated by mapping the light and electrical stimuli into conditioned and unconditioned stimuli,respectively.After training through associative pairs,reflexes could be triggered solely using light stimuli.Comprehen-sively,under specific optoelectronic signal applications,the four features of classical conditioning,namely acquisition,extinction,recovery,and generalization,were elegantly emulated.This work provides an optoelectronic memristor with associative behavior capabilities,offering a pathway for advancing brain-machine interfaces,autonomous robots,and machine self-learning in the future.

Structural and optoelectronic properties of AZO thin films prepared by RF magnetron sputtering at room temperature

Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.

Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.

Optimization of InGaAs Quantum Dots for Optoelectronic Applications

Self-assembled In 0.35Ga 0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density and high uniformity of quantum dots,optimized conditions are concluded for MBE growth.Optimized growth conditions also compared with these of InAs/GaAs quantum dots.This will be very useful for InGaAs/GaAs QDs optoelectronic applications,such as quantum dots lasers and quantum dots infrared photodetectors.

Low-Cost, High-Reflectivity Silicon-on-Reflector for Optoelectronic Device Application

A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.

Predictive Control of Optoelectronic Tracking System

Aim To solve the time delay problem in the optoelectronic tracking system, improving the tracking accuracy. Methods The discount least square algorithm was applied to forecast the tracking error caused by the 40?ms delay, and the predicting algorithm was improved by the adaptive discount method.Results The tracking errors of the two methods were compared, and an optimal controller with the improved adaptive discount predicting algorithm was adopted for simulation. Conclusion The predicting algorithms, especially the adaptive discount predicting algorithm, can decrease the tracking error greatly, and the desired tracking prediction can be achieved both in the transient state and in the steady state.

Lead?Free Halide Double Perovskite Materials: A New Superstar Toward Green and Stable Optoelectronic Applications

Lead-based halide perovskites have emerged as excellent semiconductors for a broad range of optoelectronic applications, such as photovoltaics, lighting, lasing and photon detection. However, toxicity of lead and poor stability still represent significant challenges. Fortunately, halide double perovskite materials with formula of A_2M(I)M(III)X_6 or A_2M(IV)X_6 could be potentially regarded as stable and green alternatives for optoelectronic applications, where two divalent lead ions are substituted by combining one monovalent and one trivalent ions, or one tetravalent ion. Here, the article provides an up-to-date review on the developments of halide double perovskite materials and their related optoelectronic applications including photodetectors, X-ray detectors, photocatalyst, light-emitting diodes and solar cells. The synthesized halide double perovskite materials exhibit exceptional stability, and a few possess superior optoelectronic properties. However, the number of synthesized halide double perovskites is limited, and more limited materials have been developed for optoelectronic applications to date. In addition, the band structures and carrier transport properties of the materials are still not desired, and the films still manifest low quality for photovoltaic applications. Therefore, we propose that continuing e orts are needed to develop more halide double perovskites, modulate the properties and grow high-quality films, with the aim of opening the wild practical applications.

Low-Dimensional Halide Perovskites and Their Advanced Optoelectronic Applications

Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A^(-1),respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W^(-1)and a specific normalized detectivity of the order of 10^(12 )Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes （λ= 505 nm, 460 nm, 375 nm） as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.

Deep-ultraviolet integrated photonic and optoelectronic devices:A prospect of the hybridization of group Ⅲ–nitrides, Ⅲ–oxides,and two-dimensional materials

Progress in the design and fabrication of ultraviolet and deep-ultraviolet groupⅢ–nitride optoelectronic devices,based on aluminum gallium nitride and boron nitride and their alloys,and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed.We emphasize wide-bandgap nitride compound semiconductors(i.e.,(B,Al,Ga)N)as the deep-ultraviolet materials of interest,and two-dimensional materials,namely graphene,two-dimensional boron nitride,and two-dimensional transition metal dichalcogenides,along with gallium oxide,as the hybrid integrated materials.We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices.In this article we provide an overview of aluminum nitride,sapphire,and gallium oxide as platforms for deep-ultraviolet optoelectronic devices,in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates.A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.

Band structure engineering in metal halide perovskite nanostructures for optoelectronic applications

Metal halide perovskite nanostructures have emerged as low-dimensional semiconductors of great significance in many fields such as photovoltaics,photonics,and optoelectronics.Extensive efforts on the controlled synthesis of perovskite nanostructures have been made towards potential device applications.The engineering of their band structures holds great promise in the rational tuning of the electronic and optical properties of perovskite nanostructures,which is one of the keys to achieving efficient and multifunctional optoelectronic devices.In this article,we summarize recent advances in band structure engineering of perovskite nanostructures.A survey of bandgap engineering of nanostructured perovskites is firstly presented from the aspects of dimensionality tailoring,compositional substitution,phase segregation and transition,as well as strain and pressure stimuli.The strategies of electronic doping are then reviewed,including defect-induced self-doping,inorganic or organic molecules-based chemical doping,and modification by metal ions or nanostructures.Based on the bandgap engineering and electronic doping,discussions on engineering energy band alignments in perovskite nanostructures are provided for building high-performance perovskite p-n junctions and heterostructures.At last,we provide our perspectives in engineering band structures of perovskite nanostructures towards future low-energy optoelectronics technologies.

Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites

Two-dimensional(2 D) hybrid organic-inorganic perovskites have recently attracted attention due to their layered nature, naturally formed quantum well structure, large exciton binding energy and especially better long-term environmental stability compared with their three-dimensional(3 D) counterparts. In this report, we present a brief overview of the recent progress of the optoelectronic applications in 2 D perovskites. The layer number dependent physical properties of 2 D perovskites will first be introduced and then the different synthetic approaches to achieve 2 D perovskites with different morphologies will be discussed. The optical, optoelectronic properties and self-trapped states in 2 D perovskites will be described, which are indispensable for designing the new device structures with novel functionalities and improving the device performance. Subsequently, a brief summary of the advantages and the current research status of the 2 D perovskite-based heterostructures will be illustrated.Finally, a perspective of 2 D perovskite materials is given toward their material synthesis and novel device applications.

Graphene applications in electronic and optoelectronic devices and circuits

Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.

Theoretical Study on the Structural and Optoelectronic Properties of the Linear Perfluorooctane Sulfonate (PFOS)

The perfluoroalkyl substances（PFS） have attracted considerable attention in recent years as a persistent global pollutant to be able to bioaccumulate in higher organisms.In this paper,theoretical analysis on electronic structures,optoelectronic properties and absorption spectra properties of the perflurooctane sulfonate（PFOS） in gas phase have been investigated by using the DFT/TD-DFT method.The geometric structures,electrostatic potentials,energy gaps,ionization potentials,electron affinities,frontier molecular orbital,excitation energies and absorption spectra for the ground state of PFOS were calculated.The result indicates that the ability of accepting electron of neutral PFOS is larger than that of anionic PFOS,while the electron excited by UV irradiation from HOMO to LUMO in the anionic PFOS is easier than that in the neutral PFOS.

Manufacturing of graphene based synaptic devices for optoelectronic applications

Neuromorphic computing systems can perform memory and computing tasks in parallel on artificial synaptic devices through simulating synaptic functions,which is promising for breaking the conventional von Neumann bottlenecks at hardware level.Artificial optoelectronic synapses enable the synergistic coupling between optical and electrical signals in synaptic modulation,which opens up an innovative path for effective neuromorphic systems.With the advantages of high mobility,optical transparency,ultrawideband tunability,and environmental stability,graphene has attracted tremendous interest for electronic and optoelectronic applications.Recent progress highlights the significance of implementing graphene into artificial synaptic devices.Herein,to better understand the potential of graphene-based synaptic devices,the fabrication technologies of graphene are first presented.Then,the roles of graphene in various synaptic devices are demonstrated.Furthermore,their typical optoelectronic applications in neuromorphic systems are reviewed.Finally,outlooks for development of synaptic devices based on graphene are proposed.This review will provide a comprehensive understanding of graphene fabrication technologies and graphene-based synaptic device for optoelectronic applications,also present an outlook for development of graphene-based synaptic device in future neuromorphic systems.

Investigation of optoelectronic properties of pure and Co substituted α-Al_2O_3 by Hubbard and modified Becke–Johnson exchange potentials

Advanced GGA ＋ U（Hubbard） and modified Becke–Johnson（mBJ） techniques are used for the calculation of the structural, electronic, and optical parameters of α-Al2-x CoxO3（x = 0.0, 0.167） compounds. The direct band gaps calculated by GGA and m BJ for pure alumina are 6.3 eV and 8.5 eV, respectively. The m BJ approximation provides results very close to the experimental one（8.7 eV）. The substitution of Al with Co reduces the band gap of alumina. The wide and direct band gap of the doped alumina predicts that it can efficiently be used in optoelectronic devices. The optical properties of the compounds like dielectric functions and energy loss function are also calculated. The rhombohedral structure of theα-Al2-x CoxO3（x = 0.0, 0.167） compounds reveal the birefringence properties.

Electrical characteristics and optoelectronic properties of metal-semiconductor-metal structure with zinc oxide nanowires across Au electrodes

This paper reports on a method of assembling semiconducting ZnO nanowires onto a pair of Au electrodes to construct a metal--semiconductor metal （MSM） structure by dieleetrophoresis and studying on its electrical characteristics by using current-voltage （Ⅰ - Ⅴ） measurements. An electronic model with two back to back Sehottky diodes in series with a semiconductor of nanowires was established to study the electrical transport of the MSM structures. By fitting the measured Ⅰ - Ⅴ characteristics using the proposed model, the parameters of the Schottky contacts and the resistance of nanowires could be acquired. The photoelectric properties of the MSM structures were also investigated by analysing the measurements of the electrical transports under various light intensities. The deduced results demonstrate that ZnO nanowires and their Schottky contacts with Au electrodes both contribute to photosensitivity and the MSM structures with ZnO nanowires are potentially applicable for photonic devices.

New materials based on carbazole for optoelectronic device applications:Theoretical investigation

A quantum-chemical investigation on the structural and optoelectronic properties of two materials based on carbazole is carried out.The purpose is to display the effect of grafting the fluorine atoms on their optoelectronic and physico-chemical properties.In addition to solubility in the polar solvents and the modification in geometric parameters,the substitution of fluorine destabilizes the HOMO and LUMO levels,decreases the band gap energy and raises conjugation length.These properties suggest the substituted fluorine compound as a good candidate for optoelectronic applications.

Optoelectronic memristor for neuromorphic computing

With the need of the internet of things,big data,and artificial intelligence,creating new computing architecture is greatly desired for handling data-intensive tasks.Human brain can simultaneously process and store information,which would reduce the power consumption while improve the efficiency of computing.Therefore,the development of brainlike intelligent device and the construction of brain-like computation are important breakthroughs in the field of artificial intelligence.Memristor,as the fourth fundamental circuit element,is an ideal synaptic simulator due to its integration of storage and processing characteristics,and very similar activities and the working mechanism to synapses among neurons which are the most numerous components of the brains.In particular,memristive synaptic devices with optoelectronic responding capability have the benefits of storing and processing transmitted optical signals with wide bandwidth,ultrafast data operation speed,low power consumption,and low cross-talk,which is important for building efficient brain-like computing networks.Herein,we review recent progresses in optoelectronic memristor for neuromorphic computing,including the optoelectronic memristive materials,working principles,applications,as well as the current challenges and the future development of the optoelectronic memristor.