The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission d...The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.展开更多
The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. ...The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. The identification of model parameters of IGBT in PSPICE using BP neural network is illustrated.展开更多
以氮化镓(GaN)为代表的第三代半导体正促使着固态微波功率器件向着更高功率、更高效率、集成化的方向不断发展,但这会导致器件内部电磁场分布效应更为显著,单一的路仿真已无法满足分析设计的精度需求,亟需建立有源GaN器件与无源电磁结...以氮化镓(GaN)为代表的第三代半导体正促使着固态微波功率器件向着更高功率、更高效率、集成化的方向不断发展,但这会导致器件内部电磁场分布效应更为显著,单一的路仿真已无法满足分析设计的精度需求,亟需建立有源GaN器件与无源电磁结构的一体化协同仿真技术.针对这一需求,本文提出基于时域不连续伽辽金技术的GaN基高功率微波器件高效场路协同仿真方法,将所提取的GaN HEMT(high electron mobility transistor)器件大信号紧凑模型引入电磁场方程中,采用局部时间步进技术以消除非线性紧凑模型及多尺度网格对全局算法稳定性条件的限制,实现有源器件-无源电磁结构、多尺度粗细网格的高效自适应求解.通过数值仿真算例与实验测试及软件计算结果对比展示了本文所提方法准确性和高效性,可为先进大功率微波器件的高可靠研发提供理论基础与设计参考.展开更多
文摘The transmission delay of photogenerated carriers in a CMOS-process-compatible double photodiode (DPD) is analyzed by using device simulation.The DPD small signal equivalent circuit model which includes transmission delay of photogenerated carriers is given.From analysis on the frequency domain of the circuit model the device has two poles.One has the relationship with junction capacitance and the DPD’s load,the other with the depth and the doping concentration of the N-well in the DPD.Different depth of the N-well and different area of the DPDs with bandwidth were compared.The analysis results are important to design the high speed DPDs.
文摘The paper describes the application of an ANN based approach to the identification of the parameters relevant to the steady state behavior of composite power electronic device models of circuit simulation software. The identification of model parameters of IGBT in PSPICE using BP neural network is illustrated.
基金supported by the National Natural Science Foundation of China (No. 61474081)Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology (No. DH201513)
文摘以氮化镓(GaN)为代表的第三代半导体正促使着固态微波功率器件向着更高功率、更高效率、集成化的方向不断发展,但这会导致器件内部电磁场分布效应更为显著,单一的路仿真已无法满足分析设计的精度需求,亟需建立有源GaN器件与无源电磁结构的一体化协同仿真技术.针对这一需求,本文提出基于时域不连续伽辽金技术的GaN基高功率微波器件高效场路协同仿真方法,将所提取的GaN HEMT(high electron mobility transistor)器件大信号紧凑模型引入电磁场方程中,采用局部时间步进技术以消除非线性紧凑模型及多尺度网格对全局算法稳定性条件的限制,实现有源器件-无源电磁结构、多尺度粗细网格的高效自适应求解.通过数值仿真算例与实验测试及软件计算结果对比展示了本文所提方法准确性和高效性,可为先进大功率微波器件的高可靠研发提供理论基础与设计参考.
