Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optica...Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.展开更多
A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an M...A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.展开更多
We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOl). Three gate-oxide layers embedded...We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOl). Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.展开更多
A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade (RGC) transimpedance amplifier (TIA) is designed.The small signal circuit model of DPD is given and the bandwidth...A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade (RGC) transimpedance amplifier (TIA) is designed.The small signal circuit model of DPD is given and the bandwidth design method of a monolithic photoreceiver is presented.An important factor which limits the bandwidth of DPD detector and the photoreceiver is presented and analyzed in detail.A monolithic photoreceiver with 1.71GHz bandwidth and 49dB transimpedance gain is designed and simulated by applying a low-cost 0.6μm CMOS process and the test result is given.展开更多
文摘Utilizing hybrid integration model.the integrated model optocouplers have successfully developed.The design,fabrication and characteristic parameters of the devices are presented.
基金supported by the National Basic Research Program of China(No.2011CBA00608)the National Natural Science Foundation of China(Nos.61178051,61321063,61335010,61178048,61275169)the National High Technology Research and Development Program of China(Nos.2013AA013602,2013AA031903,2013AA032204)
文摘Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits (OEICs) based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.
文摘A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.
文摘We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOl). Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure, which boosts the modulation efficiency compared with a single MOS capacitor. The simulation results demonstrate that the Vπ Lπ product is 2. 4V · cm. The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve, respectively,indicating a bandwidth of 8GHz. The phase shift efficiency and bandwidth can be enhanced by rib width scaling.
基金The National Natural Science Foundation of China(No.61205060)the Natural Science Foundation of Fujian Province of China(No.2011J01361)the Key Project of Science and Technology of Fujian Province of China(No.2013H0047)
文摘A monolithic photoreceiver which consists of a double photodiode (DPD) detector and a regulated cascade (RGC) transimpedance amplifier (TIA) is designed.The small signal circuit model of DPD is given and the bandwidth design method of a monolithic photoreceiver is presented.An important factor which limits the bandwidth of DPD detector and the photoreceiver is presented and analyzed in detail.A monolithic photoreceiver with 1.71GHz bandwidth and 49dB transimpedance gain is designed and simulated by applying a low-cost 0.6μm CMOS process and the test result is given.