Wideband Tunable Frequency-Doubling Optoelectronic Oscillator Using a Polarization Modulator and an Optical Bandpass Filter

A wideband tunable frequency-doubling optoelectronic oscillator （FD-OEO） is proposed and experimentally demonstrated based on a polarization modulator and an optical bandpass filter （OBPF）. The central frequency of the correspondingly fundamental OEO could be adjusted by tuning the bandwidth and central frequency of the OBPF, which could also be regarded as a photonic-assisted tunable microwave filter. The frequency tuning range of the FD-OEO covers from 9.5 to 32.8？GHz, and the single sideband phase noise of the fundamental signal is lower than -100dBc/Hz at an offset of 10？kHz. Moreover, the frequency stability of the generated signal is investigated by measuring its Allan deviation. The Allan deviation of the generated fundamental signal at 10？GHz is 2.39×10^-9.

Efficient evanescent coupling design for GeSi electro-absorption modulator

Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption （EA） modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for increasing the modulating efficiency and alleviating the sensitivity of the extinction ratio （ER） and insertion loss （IL） to the length of the active region. The light behavior and the effect of the taper are explored in detail using the beam propagation method （BPM）. After optimization, the light can nearly be totally confined in the GeSi layer without any oscillation. The modulator with the designed taper can achieve low IL and high ER.

A pair of integrated optoelectronic transceiving chips for optical interconnects

In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.

Optical Generation of mm-Wave Signal Through Optoelectronic Phase-Locked Loop

In this paper, we propose a scheme for the generation of low phase noise tunable mm-wave signal by bearing two lightwaves in a photodiode. These two lightwaves are made phase coherent by an optoelectronic phase locked loop. Calculated mm-wave power at a frequency of 60 GHz is found to be -4 dBm.