Use of Optoelectronic Systems for the Analysis of Technique in Trials

Optoelectronic systems represent the gold standard of technologies used in the motion analysis for the evaluation of kinematics. Trials, a specialty of mountain biking, differ a lot from other cycling specialties, because in addition to pedaling, they require jumping techniques to overcome obstacles that involve the whole body. In this sport, more than in others, the evaluation of technical movements using optoelectronic systems goes far beyond simply assessing the biomechanics of pedaling or the correct positioning on the bike. Starting from a previous study conducted with video analysis technique applied to the lateral jumping technique, two versions of this technique were compared, considering the kinematics of the act, taking into account both the data relating the subject and the bicycle. The joint angles of the lower limbs and the angles described by the bicycle on the three space plane were considered. The major differences have been found in the ＂leap over＂ phase, about the bending of the lower limbs and the angles described by the bicycle.

Recent advances in soft electronic materials for intrinsically stretchable optoelectronic systems

In recent years,significant progress has been achieved in the design and fabrication of stretchable optoelectronic devices.In general,stretchability has been achieved through geometrical modifications of device components,such as with serpentine interconnects or buckled substrates.However,the local stiffness of individual pixels and the limited pixel density of the array have impeded further advancements in stretchable optoelectronics.Therefore,intrinsically stretch-able optoelectronics have been proposed as an alternative approach.Herein,we review the recent advances in soft elec-tronic materials for application in intrinsically stretchable optoelectronic devices.First,we introduce various intrinsically stretchable electronic materials,comprised of electronic fillers,elastomers,and surfactants,and exemplify different in-trinsically stretchable conducting and semiconducting composites.We also describe the processing methods used to fabricate the electrodes,interconnections,charge transport layers,and optically active layers used in intrinsically stretch-able optoelectronic devices.Subsequently,we review representative examples of intrinsically stretchable optoelectronic devices,including light-emitting capacitors,light-emitting diodes,photodetectors,and photovoltaics.Finally,we briefly discuss intrinsically stretchable integrated optoelectronic systems.

Predictive Control of Optoelectronic Tracking System

Aim To solve the time delay problem in the optoelectronic tracking system, improving the tracking accuracy. Methods The discount least square algorithm was applied to forecast the tracking error caused by the 40?ms delay, and the predicting algorithm was improved by the adaptive discount method.Results The tracking errors of the two methods were compared, and an optimal controller with the improved adaptive discount predicting algorithm was adopted for simulation. Conclusion The predicting algorithms, especially the adaptive discount predicting algorithm, can decrease the tracking error greatly, and the desired tracking prediction can be achieved both in the transient state and in the steady state.

Fully implantable and battery-free wireless optoelectronic system for modulable cancer therapy and real-time monitoring

Photodynamic therapy(PDT)is attracting attention as a next-generation cancer treatment that can selectively destroy malignant tissues,exhibit fewer side effects,and lack pain during treatments.Implantable PDT systems have recently been developed to resolve the issues of bulky and expensive conventional PDT systems and to implement continuous and repetitive treatment.Existing implantable PDT systems,however,are not able to perform multiple functions simultaneously,such as modulating light intensity,measuring,and transmitting tumor-related data,resulting in the complexity of cancer treatment.Here,we introduce a flexible and fully implantable wireless optoelectronic system capable of continuous and effective cancer treatment by fusing PDT and hyperthermia and enabling tumor size monitoring in real-time.This system exploits micro inorganic light-emitting diodes(μ-LED)that emit light with a wavelength of 624 nm,designed not to affect surrounding normal tissues by utilizing a fully programmable light intensity ofμ-LED and precisely monitoring the tumor size by Si phototransistor during a long-term implantation(2–3 weeks).The superiority of simultaneous cancer treatment and tumor size monitoring capabilities of our system operated by wireless power and data transmissions with a cell phone was confirmed through in vitro experiments,ray-tracing simulation results,and a tumor xenograft mouse model in vivo.This all-in-one single system for cancer treatment offers opportunities to not only enable effective treatment of tumors located deep in the tissue but also enable precise and continuous monitoring of tumor size in real-time.

Optoelectronic Detecting System for Inner Walls of Pipes

This paper is concerned with a high characteristic image processing and recognition system that is used for inspecting real-time blemishes, streaks and cracks on the inner walls of high accuracy pipes. As a regular detector, the BP neural network is used for extracting features of the image inspected and classifying these images, it takes fully advantage of the function of artificial neural network, such as the information distributed memory, large scale self-adapting parallel processing, high fault-tolerant ability and so forth. Besides, an improved BP algorithm is used in the system for training the network, and making the learning procedure of the net converges to the minimum of overall situation at high rate.

Optoelectronic Synapses Based on MXene/Violet Phosphorus van der Waals Heterojunctions for Visual‑Olfactory Crossmodal Perception

The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are scarce.Here,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals heterojunctions.Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power consumption.Furthermore,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal perception.This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.

Optoelectronic oscillator-based interrogation system for Michelson interferometric sensors

High-performance interrogation systems for optical fiber sensors are extensively required for environmental condition monitoring applications.In this article,we propose and demonstrate a Michelson interferometer(MI)interrogation system based on an optoelectronic oscillator(OEO).The frequency of the OEO is related to the free spectral range(FSR)of the MI.Thus,when the FSR of the MI varies with a change in external physical factors,the frequency of the OEO shifts and can be used for interrogation.We demonstrate that the temperature sensitivity and interrogation resolution are 35.35 MHz/℃and 0.012℃,respectively.Such an OEO-based scheme enables wavelength-to-frequency mapping and promises a wide linear interrogation range,high resolution and high-speed interrogation.

Tailoring Classical Conditioning Behavior in TiO_(2) Nanowires:ZnO QDs-Based Optoelectronic Memristors for Neuromorphic Hardware

Neuromorphic hardware equipped with associative learn-ing capabilities presents fascinating applications in the next generation of artificial intelligence.However,research into synaptic devices exhibiting complex associative learning behaviors is still nascent.Here,an optoelec-tronic memristor based on Ag/TiO_(2) Nanowires:ZnO Quantum dots/FTO was proposed and constructed to emulate the biological associative learning behaviors.Effective implementation of synaptic behaviors,including long and short-term plasticity,and learning-forgetting-relearning behaviors,were achieved in the device through the application of light and electrical stimuli.Leveraging the optoelectronic co-modulated characteristics,a simulation of neuromorphic computing was conducted,resulting in a handwriting digit recognition accuracy of 88.9%.Furthermore,a 3×7 memristor array was constructed,confirming its application in artificial visual memory.Most importantly,complex biological associative learning behaviors were emulated by mapping the light and electrical stimuli into conditioned and unconditioned stimuli,respectively.After training through associative pairs,reflexes could be triggered solely using light stimuli.Comprehen-sively,under specific optoelectronic signal applications,the four features of classical conditioning,namely acquisition,extinction,recovery,and generalization,were elegantly emulated.This work provides an optoelectronic memristor with associative behavior capabilities,offering a pathway for advancing brain-machine interfaces,autonomous robots,and machine self-learning in the future.

Structural and optoelectronic properties of AZO thin films prepared by RF magnetron sputtering at room temperature

Al-doped ZnO thin films were prepared on glass substrate using an ultra-high density target by RF magnetron sputtering at room temperature. The microstructure, surface morphology, optical and electrical properties of AZO thin films were investigated by X-ray diffractometer, scanning electron microscope, UV-visible spectrophotometer, four-point probe method, and Hall-effect measurement system. The results showed that all the films obtained were polycrystalline with a hexagonal structure and average optical transmittance of AZO thin films was over 85 % at different sputtering powers. The sputtering power had a great effect on optoelectronic properties of the AZO thin films, especially on the resistivity. The lowest resistivity of 4.5×10^-4 Ω·cm combined with the transmittance of 87.1% was obtained at sputtering power of 200 W. The optical band gap varied between 3.48 and 3.68 eV.

Design and Implementation of an Optoelectronic Integrated Receiver in Standard CMOS Process

A wideband monolithic optoelectronic integrated receiver with a high-speed photo-detector,completely compatible with standard CMOS processes,is designed and implemented in 0.6μm standard CMOS technology.The experimental results demonstrate that its performance approaches applicable requirements,where the photo-detector achieves a -3dB frequency of 1.11GHz,and the receiver achieves a 3dB bandwidth of 733MHz and a sensitivity of -9dBm for λ=850nm at BER=10-12.

Low-Cost, High-Reflectivity Silicon-on-Reflector for Optoelectronic Device Application

A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.

Optimization of InGaAs Quantum Dots for Optoelectronic Applications

Self-assembled In 0.35Ga 0.65As/GaAs quantum dots with low indium content are grown under different growth temperature and investigated using contact atomic force microscopy(AFM).In order to obtain high density and high uniformity of quantum dots,optimized conditions are concluded for MBE growth.Optimized growth conditions also compared with these of InAs/GaAs quantum dots.This will be very useful for InGaAs/GaAs QDs optoelectronic applications,such as quantum dots lasers and quantum dots infrared photodetectors.

Lead?Free Halide Double Perovskite Materials: A New Superstar Toward Green and Stable Optoelectronic Applications

Lead-based halide perovskites have emerged as excellent semiconductors for a broad range of optoelectronic applications, such as photovoltaics, lighting, lasing and photon detection. However, toxicity of lead and poor stability still represent significant challenges. Fortunately, halide double perovskite materials with formula of A_2M(I)M(III)X_6 or A_2M(IV)X_6 could be potentially regarded as stable and green alternatives for optoelectronic applications, where two divalent lead ions are substituted by combining one monovalent and one trivalent ions, or one tetravalent ion. Here, the article provides an up-to-date review on the developments of halide double perovskite materials and their related optoelectronic applications including photodetectors, X-ray detectors, photocatalyst, light-emitting diodes and solar cells. The synthesized halide double perovskite materials exhibit exceptional stability, and a few possess superior optoelectronic properties. However, the number of synthesized halide double perovskites is limited, and more limited materials have been developed for optoelectronic applications to date. In addition, the band structures and carrier transport properties of the materials are still not desired, and the films still manifest low quality for photovoltaic applications. Therefore, we propose that continuing e orts are needed to develop more halide double perovskites, modulate the properties and grow high-quality films, with the aim of opening the wild practical applications.

Low-Dimensional Halide Perovskites and Their Advanced Optoelectronic Applications

Metal halide perovskites are crystalline materials originally developed out of scientific curiosity. They have shown great potential as active materials in optoelectronic applications. In the last 6 years, their certified photovoltaic efficiencies have reached 22.1%. Compared to bulk halide perovskites, low-dimensional ones exhibited novel physical properties. The photoluminescence quantum yields of perovskite quantum dots are close to 100%. The external quantum efficiencies and current efficiencies of perovskite quantum dot light-emitting diodes have reached 8% and 43 cd A^(-1),respectively, and their nanowire lasers show ultralow-threshold room-temperature lasing with emission tunability and ease of synthesis. Perovskite nanowire photodetectors reached a responsivity of 10 A W^(-1)and a specific normalized detectivity of the order of 10^(12 )Jones. Different from most reported reviews focusing on photovoltaic applications, we summarize the rapid progress in the study of low-dimensional perovskite materials, as well as their promising applications in optoelectronic devices. In particular, we review the wide tunability of fabrication methods and the state-of-the-art research outputs of low-dimensional perovskite optoelectronic devices. Finally, the anticipated challenges and potential for this exciting research are proposed.

Microwave Photonics for Modern Radar Systems

The emerging new concepts and technologies based on microwave photonics have led to an ever-increasing interest in developing innovative radar systems with a net gain in functionality,bandwidth /resolution,size,mass,complexity and cost when compared with the traditional implementations. This paper describes the techniques developed in the last few years in microwave photonics that might revolutionize the way to design multifunction radar systems,with an emphasis on the recent advances in optoelectronic oscillators( OEOs),arbitrary waveform generation,photonic mixing,phase coding,filtering,beamforming,analog-to-digital conversion,and stable radio-frequency signal transfer. Challenges in implementation of these components and subsystems for meeting the technique requirements of the multifunction radar applications are discussed.

Manufacturing of graphene based synaptic devices for optoelectronic applications

Neuromorphic computing systems can perform memory and computing tasks in parallel on artificial synaptic devices through simulating synaptic functions,which is promising for breaking the conventional von Neumann bottlenecks at hardware level.Artificial optoelectronic synapses enable the synergistic coupling between optical and electrical signals in synaptic modulation,which opens up an innovative path for effective neuromorphic systems.With the advantages of high mobility,optical transparency,ultrawideband tunability,and environmental stability,graphene has attracted tremendous interest for electronic and optoelectronic applications.Recent progress highlights the significance of implementing graphene into artificial synaptic devices.Herein,to better understand the potential of graphene-based synaptic devices,the fabrication technologies of graphene are first presented.Then,the roles of graphene in various synaptic devices are demonstrated.Furthermore,their typical optoelectronic applications in neuromorphic systems are reviewed.Finally,outlooks for development of synaptic devices based on graphene are proposed.This review will provide a comprehensive understanding of graphene fabrication technologies and graphene-based synaptic device for optoelectronic applications,also present an outlook for development of graphene-based synaptic device in future neuromorphic systems.

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template

Optoelectronic characterisation of an individual ZnO nanowire in contact with a micro-grid template has been studied. The low-cost micro-grid template made by photolithography is used to fabricate the ohmic contact metal electrodes. The current increases linearly with the bias, indicating good ohmic contacts between the nanowire and the electrodes. The resistivity of the ZnO nanowire is calculated to be 3.8 Ω·cm. We investigate the photoresponses of an individual ZnO nanowire under different light illumination using light emitting diodes （λ= 505 nm, 460 nm, 375 nm） as excitation sources in atmosphere. When individual ZnO nanowire is exposured to different light irradiation, we find that it is extremely sensitive to UV illumination; the conductance is much larger upon UV illumination than that in the dark at room temperature. This phenomenon may be related to the surface oxygen molecule adsorbtion, which indicates their potential application to the optoelectronic switching device.

Band structure engineering in metal halide perovskite nanostructures for optoelectronic applications

Metal halide perovskite nanostructures have emerged as low-dimensional semiconductors of great significance in many fields such as photovoltaics,photonics,and optoelectronics.Extensive efforts on the controlled synthesis of perovskite nanostructures have been made towards potential device applications.The engineering of their band structures holds great promise in the rational tuning of the electronic and optical properties of perovskite nanostructures,which is one of the keys to achieving efficient and multifunctional optoelectronic devices.In this article,we summarize recent advances in band structure engineering of perovskite nanostructures.A survey of bandgap engineering of nanostructured perovskites is firstly presented from the aspects of dimensionality tailoring,compositional substitution,phase segregation and transition,as well as strain and pressure stimuli.The strategies of electronic doping are then reviewed,including defect-induced self-doping,inorganic or organic molecules-based chemical doping,and modification by metal ions or nanostructures.Based on the bandgap engineering and electronic doping,discussions on engineering energy band alignments in perovskite nanostructures are provided for building high-performance perovskite p-n junctions and heterostructures.At last,we provide our perspectives in engineering band structures of perovskite nanostructures towards future low-energy optoelectronics technologies.

Single-molecule optoelectronic devices:physical mechanism and beyond

Single-molecule devices not only promise to provide an alternative strategy to break through the miniaturization and functionalization bottlenecks faced by traditional semiconductor devices,but also provide a reliable platform for exploration of the intrinsic properties of matters at the single-molecule level.Because the regulation of the electrical properties of single-molecule devices will be a key factor in enabling further advances in the development of molecular electronics,it is necessary to clarify the interactions between the charge transport occurring in the device and the external fields,particularly the optical field.This review mainly introduces the optoelectronic effects that are involved in single-molecule devices,including photoisomerization switching,photoconductance,plasmon-induced excitation,photovoltaic effect,and electroluminescence.We also summarize the optoelectronic mechanisms of single-molecule devices,with particular emphasis on the photoisomerization,photoexcitation,and photo-assisted tunneling processes.Finally,we focus the discussion on the opportunities and challenges arising in the single-molecule optoelectronics field and propose further possible breakthroughs.

Deep-ultraviolet integrated photonic and optoelectronic devices:A prospect of the hybridization of group Ⅲ–nitrides, Ⅲ–oxides,and two-dimensional materials

Progress in the design and fabrication of ultraviolet and deep-ultraviolet groupⅢ–nitride optoelectronic devices,based on aluminum gallium nitride and boron nitride and their alloys,and the heterogeneous integration with two-dimensional and oxide-based materials is reviewed.We emphasize wide-bandgap nitride compound semiconductors(i.e.,(B,Al,Ga)N)as the deep-ultraviolet materials of interest,and two-dimensional materials,namely graphene,two-dimensional boron nitride,and two-dimensional transition metal dichalcogenides,along with gallium oxide,as the hybrid integrated materials.We examine their crystallographic properties and elaborate on the challenges that hinder the realization of efficient and reliable ultraviolet and deep-ultraviolet devices.In this article we provide an overview of aluminum nitride,sapphire,and gallium oxide as platforms for deep-ultraviolet optoelectronic devices,in which we criticize the status of sapphire as a platform for efficient deep-ultraviolet devices and detail advancements in device growth and fabrication on aluminum nitride and gallium oxide substrates.A critical review of the current status of deep-ultraviolet light emission and detection materials and devices is provided.