Influence produced by the heat effect at work of the laser instrument crystal of the semiconductor, the text designs a kind of temperature control system to the crystal of the laser instrument, using the thought and m...Influence produced by the heat effect at work of the laser instrument crystal of the semiconductor, the text designs a kind of temperature control system to the crystal of the laser instrument, using the thought and method of the classical control theory to analyze this temperature control system, and establishes mathematics model. According to mathematics model the text demonstrated the system at S field and time- area, and proposed optimizing basis to the total mark of proportion and differential parameter to con- troller PID, thus proposed a kind of temperature control scheme. And the thermostatically system is simulated by MATLAB.展开更多
Based on the high frequency techniques such as frequency response measurement,equivalent circuit modeling and packaging parasitics compensation,a comprehensive optimization method for packaging high-speed semiconducto...Based on the high frequency techniques such as frequency response measurement,equivalent circuit modeling and packaging parasitics compensation,a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper.The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies,and the in-band flatness and the phase-frequency linearity are also improved significantly.展开更多
A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit ...A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.展开更多
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated...In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.展开更多
Halide perovskite,a novel semiconductor material,was initially used in solar cells since 2009,and tremendous progresses have been witnessed in the last decade.The power conversion efficiency of the single perovskite s...Halide perovskite,a novel semiconductor material,was initially used in solar cells since 2009,and tremendous progresses have been witnessed in the last decade.The power conversion efficiency of the single perovskite solar cells has been incredibly increased up to 25.2%,and close to 30%efficiency was realized in perovskite/silicon tandem solar cells.Recently,the application of perovskite has been extended to the light-emitting diodes and photo-detectors.展开更多
The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their appl...The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).展开更多
Optical gain characteristics of Ge1-xSnμx are simulated systematically.With an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type do...Optical gain characteristics of Ge1-xSnμx are simulated systematically.With an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type doping concentration being 5×10^18/cm^3） reaches 500 cm^-1.Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density Jth are 6.47 kA/cm^2（temperature：200 K,and λ=2050 nm）,10.75 kA/cm^2（temperature：200 K,and λ=2000 nm）,and23.12 kA/cm^2（temperature：300 K,and λ=2100 nm）,respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.展开更多
Semiconductor films of organic, doped dimetallophthalocyanine M2Pcs (M = Li, Na) on different substrates were prepared by synthesis and vacuum evaporation. Tetrathiafulvalene (TTF) and tetracyanoquinodimethane (TCNQ) ...Semiconductor films of organic, doped dimetallophthalocyanine M2Pcs (M = Li, Na) on different substrates were prepared by synthesis and vacuum evaporation. Tetrathiafulvalene (TTF) and tetracyanoquinodimethane (TCNQ) were used as dopants and the structure and morphology of the semiconductor films were studied using IR spectroscopy, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDS). The absorption spectra recorded in the ultraviolet-visible region for the deposited films showed the Q and Soret bands related to the electronic π-π* transitions in M2Pc molecules. Optical characterization of the films indicates electronic transitions characteristic of amorphous thin films with optical bandgaps between 1.2 and 2.4 eV. Finally, glass/ITO/doped M2Pc/Ag thin-film devices were produced and their electrical behavior was evaluated by using the four-tip collinear method. The devices manufactured from Na2Pc have a small rectifying effect, regardless of the organic dopant used, while the device manufactured from Li2Pc-TCNQ presents ohmic-like behavior at low voltages, with an insulating threshold around 19 V. Parameters such as the hole mobility (μ), the concentration of thermally-generated holes (p0), the concentration of traps per unit of energy (P0) and the total trap concentration (Nt(e)) were also determined for the Li2Pc-TTF device.展开更多
A dielectric changes its optical and electric characteristics when an external source provides enough energy. We analyze the interaction between a laser beam and a dielectric surface placed between two metal plates in...A dielectric changes its optical and electric characteristics when an external source provides enough energy. We analyze the interaction between a laser beam and a dielectric surface placed between two metal plates in a capacitor-type configuration. We show that a voltage applied across the dielectric can shift the wavelength of the laser radiation as perceived by its electric dipoles. The optical behavior of the dielectric in this arrangement recommends the device as a possible optoelectronic switch which can be driven by a relatively small capacitor voltage.展开更多
A negative differential mobility (NDM) of the two-dimensional carrier-gas against some proper external regulator allowing for gradual controlled modification of the nanointerfacial environment tends to occur as interw...A negative differential mobility (NDM) of the two-dimensional carrier-gas against some proper external regulator allowing for gradual controlled modification of the nanointerfacial environment tends to occur as interwoven with nanophotonic device functionality. In this work, several instances, in our two-decade principal research, of both experimental observation and conceptual prediction concerning nanophotonics NDM are reconsidered towards outlining a global potential for the appearance of the effect.展开更多
It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction di...It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.展开更多
文摘Influence produced by the heat effect at work of the laser instrument crystal of the semiconductor, the text designs a kind of temperature control system to the crystal of the laser instrument, using the thought and method of the classical control theory to analyze this temperature control system, and establishes mathematics model. According to mathematics model the text demonstrated the system at S field and time- area, and proposed optimizing basis to the total mark of proportion and differential parameter to con- troller PID, thus proposed a kind of temperature control scheme. And the thermostatically system is simulated by MATLAB.
基金Supported by the National Natural Science Foundation of China (Grant Nos. 60820106004, 60536010, 60606019, 60777029 and 60837001)National High Technology Research and Development Program of China (Grant No. 2009AA03Z409)Major International Cooperation Projects of China (Grant No. 2006dfa11880)
文摘Based on the high frequency techniques such as frequency response measurement,equivalent circuit modeling and packaging parasitics compensation,a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper.The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies,and the in-band flatness and the phase-frequency linearity are also improved significantly.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.60536030,61036002,60776024,60877035 and 61036009)National High Technology Research and Development Program of China(Grant Nos.2007AA04Z329 and 2007AA04Z254)
文摘A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.
文摘In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devices, and becomes a hot research area in many developed countries such as USA, Japan, Germany and Israel etc. Research progress in the preparation and application of ABCS materials, existing problems and some latest results are briefly introduced.
文摘Halide perovskite,a novel semiconductor material,was initially used in solar cells since 2009,and tremendous progresses have been witnessed in the last decade.The power conversion efficiency of the single perovskite solar cells has been incredibly increased up to 25.2%,and close to 30%efficiency was realized in perovskite/silicon tandem solar cells.Recently,the application of perovskite has been extended to the light-emitting diodes and photo-detectors.
文摘The pulsed laser deposition(PLD)technology was used to effectively create conductive nano and micro hafnium oxide with great purity and transparency for(HfO_(2))nanofilms.In many optoelectronics devices and their applications,the presence of a high dielectric substance like a nano HfO2,between the metal contacts and the substrates was critical.We used the Pulsed Laser Deposition method to fabricate an Al/HfO_(2)/p-Si Schottky barrier diode where the nanostructured HfO2 films as an intermediate layer and varied substrate temperatures.The optical result reveals a high degree of transparency(93%).The optical bandgap of deposited HfO2 films was observed to vary between 4.9 and 5.3 eV,with a value of roughly 5.3 eV at the optimal preparation condition.The morphology of the surface shows a high homogeneous nano structure with the average values of the roughness about(0.3 nm).With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-Vcharacterization.With regard to substrate temperature,the produced factor ideality for fabricated diode was determined to be lowering and the associated values of the barrier height rose based on I-V characterization.The diode manufactured at 600℃,in particular,had a higher ideality factor value(n=3.2).
基金supported by the Major State Basic Research Development Program of China(Grant No.2013CB632103)the National High-Technology Research and Development Program of China(Grant No.2012AA012202)the National Natural Science Foundation of China(Grant Nos.61177038 and 61176013)
文摘Optical gain characteristics of Ge1-xSnμx are simulated systematically.With an injection carrier concentration of 5×10^18/cm^3 at room temperature,the maximal optical gain of Ge0.922Sn0.078 alloy（with n-type doping concentration being 5×10^18/cm^3） reaches 500 cm^-1.Moreover,considering the free-carrier absorption effect,we find that there is an optimal injection carrier density to achieve a maximal net optical gain.A double heterostructure Ge0.554Si0.289Sn0.157/Ge0.922Sn0.078/Ge0.554Si0.289Sn0.157 short-wave infrared laser diode is designed to achieve a high injection efficiency and low threshold current density.The simulation values of the device threshold current density Jth are 6.47 kA/cm^2（temperature：200 K,and λ=2050 nm）,10.75 kA/cm^2（temperature：200 K,and λ=2000 nm）,and23.12 kA/cm^2（temperature：300 K,and λ=2100 nm）,respectively.The results indicate the possibility to obtain a Si-based short-wave infrared Ge1-xSnx laser.
文摘Semiconductor films of organic, doped dimetallophthalocyanine M2Pcs (M = Li, Na) on different substrates were prepared by synthesis and vacuum evaporation. Tetrathiafulvalene (TTF) and tetracyanoquinodimethane (TCNQ) were used as dopants and the structure and morphology of the semiconductor films were studied using IR spectroscopy, X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive X-Ray Spectroscopy (EDS). The absorption spectra recorded in the ultraviolet-visible region for the deposited films showed the Q and Soret bands related to the electronic π-π* transitions in M2Pc molecules. Optical characterization of the films indicates electronic transitions characteristic of amorphous thin films with optical bandgaps between 1.2 and 2.4 eV. Finally, glass/ITO/doped M2Pc/Ag thin-film devices were produced and their electrical behavior was evaluated by using the four-tip collinear method. The devices manufactured from Na2Pc have a small rectifying effect, regardless of the organic dopant used, while the device manufactured from Li2Pc-TCNQ presents ohmic-like behavior at low voltages, with an insulating threshold around 19 V. Parameters such as the hole mobility (μ), the concentration of thermally-generated holes (p0), the concentration of traps per unit of energy (P0) and the total trap concentration (Nt(e)) were also determined for the Li2Pc-TTF device.
文摘A dielectric changes its optical and electric characteristics when an external source provides enough energy. We analyze the interaction between a laser beam and a dielectric surface placed between two metal plates in a capacitor-type configuration. We show that a voltage applied across the dielectric can shift the wavelength of the laser radiation as perceived by its electric dipoles. The optical behavior of the dielectric in this arrangement recommends the device as a possible optoelectronic switch which can be driven by a relatively small capacitor voltage.
文摘A negative differential mobility (NDM) of the two-dimensional carrier-gas against some proper external regulator allowing for gradual controlled modification of the nanointerfacial environment tends to occur as interwoven with nanophotonic device functionality. In this work, several instances, in our two-decade principal research, of both experimental observation and conceptual prediction concerning nanophotonics NDM are reconsidered towards outlining a global potential for the appearance of the effect.
基金Project supported by the Ministry of Science and Technology of China (Grant No.2018YFE0118300)the National Key Research and Development Program of China (Grant No.2018YFA0703703)+1 种基金State Key Laboratory of ASIC&System (Grant No.2021MS003)Science and Technology Commission of Shanghai Municipality,China (Grant No.20501130100)。
文摘It is significant to develop a heterogeneous integration technology to promote the application of two-dimensional(2D)materials in silicon roadmap. In this paper, we reported a field-effect WSe_(2)/Si heterojunction diode based on ambipolar 2D WSe_(2) and silicon on insulator(SOI). Our results indicate that the device exhibits a p–n diode behavior with a rectifying ratio of ~300 and an ideality factor of 1.37. As a photodetector, it has optoelectronic properties with a response time of 0.13 ms, responsivity of 0.045 A/W, detectivity of 4.5×10~(10) Jones and external quantum efficiency(EQE) of 8.9 %.Due to the ambipolar behavior of the WSe_(2), the rectifying and optoelectronic properties of the heterojunction diode can be modulated by the gate electrical field, enabling various potential applications such as logic optoelectronic devices and neuromorphic optoelectronic devices for in-sensor computing circuits. Thanks to the process based on the mature SOI technique, our field-effect heterojunction diode should have obvious advantages in device isolation and integration.
