The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate m...The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff's ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.展开更多
文摘The avalanche multiplication principle of electron multiplication CCD (EMCCD) was discussed on the basis of single type of carrier, and the multiplication model was built by using a classic piecewise ionization rate model and avalanche multiplication integral formula. Wolff's ionization rate model was selected according to the structure and the multiplication gate amplitude of the actual devices. Compared the theoretical result with the multiplication curve of the actual device, it was found that only enough fringing field strength and multiplication area length could lead to adequate signal charge multiplication. The relationship between the multiplication gate amplitude and the total gain of the cascaded boosting EMCCD can be conveniently determined by using this model.
