Developing easily accessible deep-red/near-infrared circularly polarized emitters for practical organic light-emitting diodes remains a significant challenge.Here,a practical strategy has been proposed for developing ...Developing easily accessible deep-red/near-infrared circularly polarized emitters for practical organic light-emitting diodes remains a significant challenge.Here,a practical strategy has been proposed for developing deep-red circularly polarized delayed fluorescent emitters based on a novel chiral acceptor platform.By changing triphenylamine(TPA)substitution position from para to meta,R/S-M-TBBTCN demonstrated thermally activated delayed fluorescence(TADF)properties with a delayed lifetime of 6.6µs that R/S-P-TBBTCN doesn’t have.Furthermore,R/S-M-TBBTCN showed a 65 nm red-shift in emission and a 10-fold enhancement in asymmetry factor(glum),compared with R/S-P-TBBTCN.The solution-processed nondoped circularly polarized organic light-emitting diodes(CP-OLEDs)based on R-M-TBBTCN display deep-red emission and 2.2%external quantum efficiency.展开更多
A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electr...A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.展开更多
High performance organic light-emitting devices (OLEDs) have been investigated by using fluorescent bis (2-methyl-8-quinolinolato)(para-phenylphenolato)aluminum(BAlq) as an emissive layer on the performance of...High performance organic light-emitting devices (OLEDs) have been investigated by using fluorescent bis (2-methyl-8-quinolinolato)(para-phenylphenolato)aluminum(BAlq) as an emissive layer on the performance of multicolor devices consisting of N, N'-bis-(1-naphthyl)-N,N'diphenyl- 1,1'-biphenyl-4,4'- diamine (NPB) as hole transport layer. The results show that the performance of heterostructure blue light-emitting device composed of 8-hydroxyquinoline aluminum (Alq3) as an electron transport layer has been dramatically enhanced. In the case of high performance heterostructure devices, the electroluminescent spectra has been perceived to vary strongly with the thickness of the organic layers due to the different recombination region, which indicates that various color devices composed of identical components could be implemented by changing the film thickness of different functional layers.展开更多
We chose pentacene as a hole injection layer(HIL) to fabricate the high performance blue fluorescent organic lightemitting devices(OLEDs). We found that the carrier mobility of the pentacene thin films could be ef...We chose pentacene as a hole injection layer(HIL) to fabricate the high performance blue fluorescent organic lightemitting devices(OLEDs). We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer(ETL) presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.展开更多
A series of star-shaped molecules with benzene core and naphthalimides derivatives end groups have been designed to explore their optical,electronic,and charge transport properties as charge transport and/or luminesce...A series of star-shaped molecules with benzene core and naphthalimides derivatives end groups have been designed to explore their optical,electronic,and charge transport properties as charge transport and/or luminescent materials for organic light-emitting diodes(OLEDs). The frontier molecular orbitals(FMOs) analysis has turned out that the vertical electronic transitions of absorption and emission are characterized as intramolecular charge transfer(ICT). The calculated results show that the optical and electronic properties of star-shaped molecules are affected by the substituent groups in N-position of 1,8-naphthalimide ring. Our results suggest that star-shaped molecules with n-butyl(1),benzene(2),thiophene(3),thiophene S?,S?-dioxide(4),benzo[c][1,2,5]thiadiazole(5),and 2,7a-dihydrobenzo[d]thiazole(6) fragments are expected to be promising candidates for luminescent and electron transport materials for OLEDs. This study should be helpful in further theoretical investigations on such kind of systems and also to the experimental study for charge transport and/or luminescent materials for OLEDs.展开更多
We investigate the thermal characteristics of standard organic light-emitting diodes (OLEDs) using a simple and clear 1D thermal model based on the basic heat transfer theory. The thermal model can accurately estima...We investigate the thermal characteristics of standard organic light-emitting diodes (OLEDs) using a simple and clear 1D thermal model based on the basic heat transfer theory. The thermal model can accurately estimate the device temperature, which is linearly with electrical input power. The simulation results show that there is almost no temperature gradient within the OLED device working under steady state conditions. Furthermore, thermal analysis simulation results show that the surface properties (convective heat transfer coetficient and surface emissivity) of the substrate or cathode can significantly affect the temperature distribution of the OLED.展开更多
The optical transmission(200--2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Ω/), ITO(12 Ω/), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were inves...The optical transmission(200--2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Ω/), ITO(12 Ω/), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 μm based on Er(DBM)3Phen with ITO(100 Ω/), ITO(12 Ω/) and PANI as anodes, respectively, were fabricated. The device structure was anode/4"-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/ N,N'-di-l-naphthyl- N,N'-diphenylbenzidine(NPB)/Er(DBM)3Phen/tris-(8-hydroxyquinoline) aluminum(Alq3)/A1. The results suggest that the performance of NIR-OLEDs with ITO(100 Ω/), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Ω/) and PANI as anodes, respectively. The high N1R transmittance of ITO(100 Ω/) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Ω/) are another reasons.展开更多
The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage c...The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.展开更多
Applications of platinum complexes as phosphorescent emitters in high efficiency organic light-emitting diodes (OLEDs) were shortly discussed in this paper. Key recent studies on highly efficient blue, green, red an...Applications of platinum complexes as phosphorescent emitters in high efficiency organic light-emitting diodes (OLEDs) were shortly discussed in this paper. Key recent studies on highly efficient blue, green, red and white-phosphorescent OLEDs based on Pt complexes are presented in terms of efficiency and color quality.展开更多
Nanorod-like TiO2 (nc-TiO2) and MoO3 (nc-MoO3) films were thermally grown from Ti- and Mo-metallic wafers. Nanohybrid films of N,N’-diphenyl-N,N’-bis(1-naphthyl)(1,1’-biphenyl)-4,4’diamine (NPB)/TiO2 and NPB/MoO3 ...Nanorod-like TiO2 (nc-TiO2) and MoO3 (nc-MoO3) films were thermally grown from Ti- and Mo-metallic wafers. Nanohybrid films of N,N’-diphenyl-N,N’-bis(1-naphthyl)(1,1’-biphenyl)-4,4’diamine (NPB)/TiO2 and NPB/MoO3 used as anode/hole transport layer (HTL) heterojunctions in blue organic light emission diodes (OLEDs) were prepared by coating NPB onto the nc-TiO2 and nc-MoO3 and TiO2. Characterization of the nanostructured hybrid layers showed that both the photoluminescent property and current-voltage (I-V) characteristics of the hybrid materials were significantly enhanced in comparison with the standard NPB polymer. The electroluminous efficiency of the hybrid devices was considerably enhanced in comparison with the standard device. This suggests a useful application for fabricating “reverse” OLEDs, where the emission light goes-out through the semitransparent cathode, instead of the indium tin oxide (ITO) anode. For this, the ohmic contacts of conducting wires to metallic electrodes can be made much better than to ITO anodes.展开更多
We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first...We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device's maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.展开更多
基金supported by the National Natural Science Foundation of China(Nos.52273197 and 52333007)the Project of the Shenzhen Key Laboratory of Functional Aggregate Materials,China(No.ZDSYS20211021111400001)+1 种基金the Project of the Science Technology Innovation Commission of Shenzhen Municipality,China(Nos.JCYJ2021324134613038,KQTD20210811090142053,JCYJ20220818103007014,GJHZ20210705141810031)the Project of the Innovation and Technology Commission,China(No.ITCCNERC14SC01).
文摘Developing easily accessible deep-red/near-infrared circularly polarized emitters for practical organic light-emitting diodes remains a significant challenge.Here,a practical strategy has been proposed for developing deep-red circularly polarized delayed fluorescent emitters based on a novel chiral acceptor platform.By changing triphenylamine(TPA)substitution position from para to meta,R/S-M-TBBTCN demonstrated thermally activated delayed fluorescence(TADF)properties with a delayed lifetime of 6.6µs that R/S-P-TBBTCN doesn’t have.Furthermore,R/S-M-TBBTCN showed a 65 nm red-shift in emission and a 10-fold enhancement in asymmetry factor(glum),compared with R/S-P-TBBTCN.The solution-processed nondoped circularly polarized organic light-emitting diodes(CP-OLEDs)based on R-M-TBBTCN display deep-red emission and 2.2%external quantum efficiency.
基金supported by the National Natural Science Foundation of China(Grant Nos.61307036 and 61307037)the Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD),Chinathe University Science Research Project of Jiangsu Province,China(Grant No.12KJB510028)
文摘A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.
基金This was work supported in part by the National Nature Science Foundation oChina under Grant No. 60425101.
文摘High performance organic light-emitting devices (OLEDs) have been investigated by using fluorescent bis (2-methyl-8-quinolinolato)(para-phenylphenolato)aluminum(BAlq) as an emissive layer on the performance of multicolor devices consisting of N, N'-bis-(1-naphthyl)-N,N'diphenyl- 1,1'-biphenyl-4,4'- diamine (NPB) as hole transport layer. The results show that the performance of heterostructure blue light-emitting device composed of 8-hydroxyquinoline aluminum (Alq3) as an electron transport layer has been dramatically enhanced. In the case of high performance heterostructure devices, the electroluminescent spectra has been perceived to vary strongly with the thickness of the organic layers due to the different recombination region, which indicates that various color devices composed of identical components could be implemented by changing the film thickness of different functional layers.
基金Project supported by the National Natural Science Foundation of China(Grant No.60906022)the Natural Science Foundation of Tianjin,China(Grant No.10JCYBJC01100)+1 种基金the Key Science and Technology Support Program of Tianjin,China(Grant No.14ZCZDGX00006)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘We chose pentacene as a hole injection layer(HIL) to fabricate the high performance blue fluorescent organic lightemitting devices(OLEDs). We found that the carrier mobility of the pentacene thin films could be efficiently improved after a critical annealing at temperature 120℃. Then we performed the tests of scanning electron microscopy, atomic force microscopy, and Kelvin probe to explore the effect of annealing on the pentacene films. The pentacene film exhibited a more crystalline form with better continuities and smoothness after annealing. The optimal device with 120℃ annealed pentacene film and n-doped electron transport layer(ETL) presents a low turn-on voltage of 2.6 V and a highest luminance of 134800 cd/m^2 at 12 V, which are reduced by 26% and improved by 50% compared with those of the control device.
基金Support by the National Natural Science Foundation of China(No.21563002)the Natural Science Foundation of Inner Mongolia Autonomous Region(No.2015MS0201)the Research Program of Sciences at Universities of Inner Mongolia Autonomous Region(No.NJZZ235)
文摘A series of star-shaped molecules with benzene core and naphthalimides derivatives end groups have been designed to explore their optical,electronic,and charge transport properties as charge transport and/or luminescent materials for organic light-emitting diodes(OLEDs). The frontier molecular orbitals(FMOs) analysis has turned out that the vertical electronic transitions of absorption and emission are characterized as intramolecular charge transfer(ICT). The calculated results show that the optical and electronic properties of star-shaped molecules are affected by the substituent groups in N-position of 1,8-naphthalimide ring. Our results suggest that star-shaped molecules with n-butyl(1),benzene(2),thiophene(3),thiophene S?,S?-dioxide(4),benzo[c][1,2,5]thiadiazole(5),and 2,7a-dihydrobenzo[d]thiazole(6) fragments are expected to be promising candidates for luminescent and electron transport materials for OLEDs. This study should be helpful in further theoretical investigations on such kind of systems and also to the experimental study for charge transport and/or luminescent materials for OLEDs.
基金Supported by the National Natural Science Foundation of China under Grant No 11304247the Shaanxi Provincial Research Plan for Young Scientific and Technological New Stars(No 2015KJXX-40)the Youth Foundation of Xi’an University of Post&Telecommunication under Grant Nos 1011215 and 1010473
文摘We investigate the thermal characteristics of standard organic light-emitting diodes (OLEDs) using a simple and clear 1D thermal model based on the basic heat transfer theory. The thermal model can accurately estimate the device temperature, which is linearly with electrical input power. The simulation results show that there is almost no temperature gradient within the OLED device working under steady state conditions. Furthermore, thermal analysis simulation results show that the surface properties (convective heat transfer coetficient and surface emissivity) of the substrate or cathode can significantly affect the temperature distribution of the OLED.
基金Supported by the National Natural Science Foundation of China(No.60807009)Specialized Research Fund for the Doctoral Program of Higher Education of China(No.200801411038)Young Teacher Foundation of Dalian University of Technology,China(No.3005-893212)
文摘The optical transmission(200--2000 nm), sheet resistance and work functions of indium-tin oxide(ITO)(100 Ω/), ITO(12 Ω/), zinc-oxide(ZnO), aluminum-doped ZnO(AZO) and polyaniline(PANI) films were investigated. Near-infrared organic light-emitting diodes(NIR-OLEDs) emitting around 1.54 μm based on Er(DBM)3Phen with ITO(100 Ω/), ITO(12 Ω/) and PANI as anodes, respectively, were fabricated. The device structure was anode/4"-tris(N-3-methylphenyl-N-phenyl-amino)-triphenylamine(m-MTDATA)/ N,N'-di-l-naphthyl- N,N'-diphenylbenzidine(NPB)/Er(DBM)3Phen/tris-(8-hydroxyquinoline) aluminum(Alq3)/A1. The results suggest that the performance of NIR-OLEDs with ITO(100 Ω/), which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO(12 Ω/) and PANI as anodes, respectively. The high N1R transmittance of ITO(100 Ω/) is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO(100 Ω/) are another reasons.
基金Supported by the National Natural Science Foundation of China(No. 20372060), the Key National Natural Science Foundationof China(No. 20131010), the Important National Natural Science Foundation of China(No. 20490210), the"863"Program(Nos.2002AA302105 and 2002AA324080) and Foreign Communion &Cooperation of National Natural Science Foundation of China(No.20340420326).
文摘The dependence of the performance of organic light-emitting devices(OLEDs) on the sheet resistance of indiumtin-oxide(ITO) anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence(EL) efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.
基金supported by the Development Foundation for Electronic and Information Industry(2010),the Science and Technology Commission of Shanghai Municipality(Grant No.10DZ1140502)the Mechatronics Engineering Innovation Group Project from Shanghai Education Commissionthe Key Laboratory of Advanced Display and System Applications(Shanghai University),Ministry of Education,China(Grant No.P201004)
文摘Applications of platinum complexes as phosphorescent emitters in high efficiency organic light-emitting diodes (OLEDs) were shortly discussed in this paper. Key recent studies on highly efficient blue, green, red and white-phosphorescent OLEDs based on Pt complexes are presented in terms of efficiency and color quality.
文摘Nanorod-like TiO2 (nc-TiO2) and MoO3 (nc-MoO3) films were thermally grown from Ti- and Mo-metallic wafers. Nanohybrid films of N,N’-diphenyl-N,N’-bis(1-naphthyl)(1,1’-biphenyl)-4,4’diamine (NPB)/TiO2 and NPB/MoO3 used as anode/hole transport layer (HTL) heterojunctions in blue organic light emission diodes (OLEDs) were prepared by coating NPB onto the nc-TiO2 and nc-MoO3 and TiO2. Characterization of the nanostructured hybrid layers showed that both the photoluminescent property and current-voltage (I-V) characteristics of the hybrid materials were significantly enhanced in comparison with the standard NPB polymer. The electroluminous efficiency of the hybrid devices was considerably enhanced in comparison with the standard device. This suggests a useful application for fabricating “reverse” OLEDs, where the emission light goes-out through the semitransparent cathode, instead of the indium tin oxide (ITO) anode. For this, the ohmic contacts of conducting wires to metallic electrodes can be made much better than to ITO anodes.
基金supported by the National Natural Science Foundation of China(Grant No.60906022)the Natural Science Foundation of Tianjin,China(Grant No.10JCYBJC01100)+2 种基金the Scientific Developing Foundation of Tianjin Education Commission,China(Grant No.2011ZD02)the Key Science and Technology Support Program of Tianjin,China(Grant No.14ZCZDGX00006)the National High Technology Research and Development Program of China(Grant No.2013AA014201)
文摘We investigate the electron injection effect of inserting a thin aluminum(Al) layer into cesium carbonate(Cs2CO3)injection layer. Two groups of organic light-emitting devices(OLEDs) are fabricated. For the first group of devices based on Alq3, we insert a thin Al layer of different thickness into Cs2CO3 injection layer, and the device's maximum current efficiency of 6.5 cd/A is obtained when the thickness of the thin Al layer is 0.4 nm. However, when the thickness of Al layer is 0.8 nm, the capacity of electron injection is the strongest. To validate the universality of this approach, then we fabricate another group of devices based on another blue emitting material. The maximum current efficiency of the device without and with a thin Al layer is 4.51 cd/A and 4.84 cd/A, respectively. Inserting a thin Al layer of an appropriate thickness into Cs2CO3 layer can result in the reduction of electron injection barrier, enhancement of the electron injection, and improvement of the performance of OLEDs. This can be attributed to the mechanism that thermally evaporated Cs2CO3 decomposes into cesium oxides, the thin Al layer reacts with cesium oxides to form Al–O–Cs complex, and the amount of the Al–O–Cs complex can be controlled by adjusting the thickness of the thin Al layer.