Application of graphene vertical field effect to regulation of organic light-emitting transistors

The luminescence intensity regulation of organic light-emitting transistor(OLED)device can be achieved effectively by the combination of graphene vertical field effect transistor(GVFET)and OLED.In this paper,we fabricate and characterize the graphene vertical field-effect transistor with gate dielectric of ion-gel film,confirming that its current switching ratio reaches up to 102.Because of the property of high light transmittance in ion-gel film,the OLED device prepared with graphene/PEDOT:PSS as composite anode exhibits good optical properties.We also prepare the graphene vertical organic light-emitting field effect transistor(GVOLEFET)by the combination of GVFET and graphene OLED,analyzing its electrical and optical properties,and confirming that the luminescence intensity can be significantly changed by regulating the gate voltage.

Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor

The development of various artificial electronics and machines would explosively increase the amount of information and data,which need to be processed via in-situ remediation.Bioinspired synapse devices can store and process signals in a parallel way,thus improving fault tolerance and decreasing the power consumption of artificial systems.The organic field effect transistor(OFET)is a promising component for bioinspired neuromorphic systems because it is suitable for large-scale integrated circuits and flexible devices.In this review,the organic semiconductor materials,structures and fabrication,and different artificial sensory perception systems functions based on neuromorphic OFET devices are summarized.Subsequently,a summary and challenges of neuromorphic OFET devices are provided.This review presents a detailed introduction to the recent progress of neuromorphic OFET devices from semiconductor materials to perception systems,which would serve as a reference for the development of neuromorphic systems in future bioinspired electronics.

Device design principles and bioelectronic applications for flexible organic electrochemical transistors

Organic electrochemical transistors(OECTs) exhibit significant potential for applications in healthcare and human-machine interfaces, due to their tunable synthesis, facile deposition, and excellent biocompatibility. Expanding OECTs to the fexible devices will significantly facilitate stable contact with the skin and enable more possible bioelectronic applications. In this work,we summarize the device physics of fexible OECTs, aiming to offer a foundational understanding and guidelines for material selection and device architecture. Particular attention is paid to the advanced manufacturing approaches, including photolithography and printing techniques, which establish a robust foundation for the commercialization and large-scale fabrication. And abundantly demonstrated examples ranging from biosensors, artificial synapses/neurons, to bioinspired nervous systems are summarized to highlight the considerable prospects of smart healthcare. In the end, the challenges and opportunities are proposed for fexible OECTs. The purpose of this review is not only to elaborate on the basic design principles of fexible OECTs, but also to act as a roadmap for further exploration of wearable OECTs in advanced bio-applications.

Transient Response and Ionic Dynamics in Organic Electrochemical Transistors

The rapid development of organic electrochemical transistors(OECTs)has ushered in a new era in organic electronics,distinguishing itself through its application in a variety of domains,from high-speed logic circuits to sensitive biosensors,and neuromorphic devices like artificial synapses and organic electrochemical random-access memories.Despite recent strides in enhancing OECT performance,driven by the demand for superior transient response capabilities,a comprehensive understanding of the complex interplay between charge and ion transport,alongside electron–ion interactions,as well as the optimization strategies,remains elusive.This review aims to bridge this gap by providing a systematic overview on the fundamental working principles of OECT transient responses,emphasizing advancements in device physics and optimization approaches.We review the critical aspect of transient ion dynamics in both volatile and non-volatile applications,as well as the impact of materials,morphology,device structure strategies on optimizing transient responses.This paper not only offers a detailed overview of the current state of the art,but also identifies promising avenues for future research,aiming to drive future performance advancements in diversified applications.

Efficient energy transfer in organic light-emitting transistor with tunable wavelength

Key challenges in the development of organic light-emitting transistors(OLETs)are blocking both scientific research and practical applications of these devices,e.g.,the absence of high-mobility emissive organic semiconductor materials,low device efficiency,and color tunability.Here,we report a novel device configuration called the energy transfer organic light-emitting transistor(ET-OLET)that is intended to overcome these challenges.An organic fluorescent dye-doped polymethyl methacrylate(PMMA)layer is inserted below the conventional high-mobility organic semiconductor layer in a single-component OLET to separate the functions of the charge transport and light-emitting layers,thus making the challenge to essentially integrate the high mobility and emissive functions within a single organic semiconductor in a conventional OLET or multilayer OLET unnecessary.In this architecture,there is little change in mobility,but the external quantum efficiency(EQE)of the ET-OLET is more than six times that of the conventional OLET because of the efficient Förster resonance energy transfer,which avoids exciton-charge annihilation.In addition,the emission color can be tuned from blue to white to green-yellow using the sourcedrain and gate voltages.The proposed structure is promising for use with electrically pumped organic lasers.

Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

Organic field-effect transistors(OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm^2V^(-1)s^(-1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene(BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene(TIPSPEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 9 10 cm^2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed.By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm^2V^(-1)s^(-1)(average mobility 1.2 cm^2V^(-1)s^(-1)) and 3.0 cm^2V^(-1)s^(-1)(average mobility2.0 cm^2V^(-1)s^(-1)), respectively. They both have a high on/off ratio(I_(on)/I_(off))>10~9. The performance can well satisfy the requirements for light-emitting diodes driving.

Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes

A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.

Air-Stable Ultrabright Inverted Organic Light-Emitting Devices with Metal Ion-Chelated Polymer Injection Layer

Here,this work presents an air-stable ultrabright inverted organic lightemitting device(OLED)by using zinc ionchelated polyethylenimine(PEI)as electron injection layer.The zinc chelation is demonstrated to increase the conductivity of the PEI by three orders of magnitude and passivate the polar amine groups.With these physicochemical properties,the inverted OLED shows a record-high external quantum efficiency of 10.0% at a high brightness of 45,610 cd m^(-2) and can deliver a maximum brightness of 121,865 cd m^(-2).Besides,the inverted OLED is also demonstrated to possess an excellent air stability(humidity,35%)with a half-brightness operating time of 541 h@1000 cd m^(-2) without any protection nor encapsulation.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Improving efficiency of organic light-emitting devices by optimizing the LiF interlayer in the hole transport layer

The efficiency of organic light-emitting devices （OLEDs） based on N,N＇-bis（1-naphthyl）-N,N＇-diphenyl-N,1＇- biphenyl-4,4＇-diamine （NPB） （the hole transport layer） and tris（8-hydroxyquinoline） aluminum （Alq3） （both emission and electron transport layers） is improved remarkably by inserting a LiF interlayer into the hole transport layer. This thin LiF interlayer can effectively influence electrical performance and significantly improve the current efficiency of the device. A device with an optimum LiF layer thickness at the optimum position in NPB exhibits a maximum current efficiency of 5.96 cd/A at 215.79 mA/cm2, which is about 86% higher than that of an ordinary device （without a LiF interlayer, 3.2 cd/A）. An explanation can be put forward that LiF in the NPB layer can block holes and balance the recombination of holes and electrons. The results may provide some valuable references for improving OLED current efficiency.

Enhancing The Efficiency of White Organic Light-emitting Diode Using Energy Recyclable Photovoltaic Cells

We demonstrate that power recycling is feasible by using a semi-transparent stripped Al electrode as interconnecting layer to merge a white organic light-emitting devices(WOLED) and an organic photovoltaic(OPV) cell.The device is called a PVOLED.It has a glass / ITO / CuPc / m-MTDATA ∶ V 2 O 5 / NPB / CBP ∶ FIrpic ∶ DCJTB / BPhen / LiF / Al / P3HT∶ PCBM / V 2 O 5 / Al structure.The power recycling efficiency of 10.133% is achieved under the WOLED of PVOLED operated at 9 V and at a brightness of 2 110 cd / m 2,when the conversion efficiency of OPV is 2.3%.We have found that the power recycling efficiency is decreased under high brightness and high applied voltage due to an increase input power of WOLED.High efficiency(18.3 cd / A) and high contrast ratio(9.3) were obtained at the device operated at 2 500 cd / m 2 under an ambient illumination of 24 000 lx.Reasonable white light emission with Commission Internationale De L'Eclairage(CIE) color coordinates of(0.32,0.44) at 20 mA / cm 2 and slight color shift occurred in spite of a high current density of 50 mA / cm 2.The proposed PVOLED is highly promising for use in outdoors display applications.

Efficiency of a blue organic light-emitting diode enhanced by inserting charge control layers into the emission region

We demonstrate high current efficiency of a blue fluorescent organic light-emitting diode （OLED） by using the charge control layers （CCLs） based on Alq3 . The CCLs that are inserted into the emitting layers （EMLs） could impede the hole injection and facilitate the electron transport, which can improve the carrier balance and further expand the exciton generation region. The maximal current efficiency of the optimal device is 5.89 cd/A at 1.81 mA/cm2 , which is about 2.19 times higher than that of the control device （CD） without the CCL, and the maximal luminance is 19.660 cd/m2 at 12V. The device shows a good color stability though the green light emitting material Alq3 is introduced as the CCL in the EML, but it has a poor lifetime due to the formation of cationic Alq3 species.

Influence of Transparent Anode on Luminescent Performance of Near-infrared Organic Light-emitting Diodes

The optical transmission（200--2000 nm）, sheet resistance and work functions of indium-tin oxide（ITO）（100 Ω/）, ITO（12 Ω/）, zinc-oxide（ZnO）, aluminum-doped ZnO（AZO） and polyaniline（PANI） films were investigated. Near-infrared organic light-emitting diodes（NIR-OLEDs） emitting around 1.54 μm based on Er（DBM）3Phen with ITO（100 Ω/）, ITO（12 Ω/） and PANI as anodes, respectively, were fabricated. The device structure was anode/4＂-tris（N-3-methylphenyl-N-phenyl-amino）-triphenylamine（m-MTDATA）/ N,N＇-di-l-naphthyl- N,N＇-diphenylbenzidine（NPB）/Er（DBM）3Phen/tris-（8-hydroxyquinoline） aluminum（Alq3）/A1. The results suggest that the performance of NIR-OLEDs with ITO（100 Ω/）, which has a lower Sn content, as anodes appear to be better than that of NIR-OLEDs with ITO（12 Ω/） and PANI as anodes, respectively. The high N1R transmittance of ITO（100 Ω/） is a major reason for the relatively high NIR EL efficiency. The more balanced holes and electrons in the device based on ITO（100 Ω/） are another reasons.

Dependence of Performance of Organic Light-emitting Devices on Sheet Resistance of Indium-tin-oxide Anodes

The dependence of the performance of organic light-emitting devices（OLEDs） on the sheet resistance of indiumtin-oxide（ITO） anodes was investigated by measuring the steady state current density brightness voltage characteristics and the electroluminescent spectra. The device with a higher sheet resistance anode shows a lower current density, a lower brightness level, and a higher operation voltage. The electroluminescence（EL） efficiencies of the devices with the same structure but different ITO anodes show more complicated differences. Furthermore, the shift of the light-emitting zone toward the anode was found when an anode with a higher sheet resistance was used. These performance differences are discussed and attributed to the reduction of hole injection and the increase in voltage drop over ITO anode with the increase in sheet resistance.

Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes

By using p-bis（p - N, N-diphenyl-aminostyryl）benzene doped 2-tert-butyl-9, 10-bis-β-naphthyl）-anthracene as an emitting layer, we fabricate a high-efficiency and long-lifetime blue organic light emitting diode with a maximum external quantum efficiency of 6.19% and a stable lifetime at a high initial current density of 0.0375 A/cm2. We demonstrate that the change in the thicknesses of organic layers affects the operating voltage and luminous efficiency greater than the lifetime. The lifetime being independent of thickness is beneficial in achieving high-quality full-colour display devices and white lighting sources with multi-emitters.

Numerical model of multilayer organic light-emitting devices

A numerical model of multilayer organic light-emitting devices is presented in this article. This model is based on the drift-diffusion equations which include charge injection, transport, space charge effects, trapping, heterojunction interface and recombination process. The device structure in the simulation is ITO/CuPc （20 nm）/NPD （40 nm）/Alq3 （60 nm）/LiF/Al. There are two heterojunctions which should be dealt with in the simulation. The I-V characteristics, carrier distribution and recombination rate of a device are calculated. The simulation results and measured data are in good agreement.

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer （Cz6F） doped into polyvinyl carbazole （PVK） as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK：Cz6F blends are studied. Single and double layer devices are fabri- cated by using PVK： Cz6F blends, and the device with the configuration of indium tin oxide （ITO）/PVK：Cz6F/ tris（8-hydroxyquinolinate）aluminium （Alq3）/LiF/A1 exhibits white light emission with Commission Internationale de l＇Eclairage chromaticity coordinates of （0.30, 0.33） and a brightness of 402 cd/m^2. The investigation reveals that the white light is composed of a blue-green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK：Cz6F blend films.

Pure blue and white light electroluminescence in a multilayer organic light-emitting diode using a new blue emitter

We characterized the 6,12-bis{[N-（3,4-dimethylphenyl）-N-（2,4,5-trimethylphenyl）]amino} chrysene （BmPAC）, which has been proven to be a blue fluorescent emission with high EL efficiency. The blue fluorescent device exhibits good performance with an external quantum efficiency of 5.8% and current efficiency of 8.9 cd/A, respectively. Using BmPAC, we also demonstrate a hybrid phosphorescence/fluorescence white organic light-emitting device （WOLED） with high efficiency of 36.3 cd/A. In order to improve the relative intensity of blue light, we plus a blue light-emitting layer （BEML） in front of the orange light emitting layer （YEML） to take advantage of the excess singlet excitons. With the new emitting layer of BEML/YEML/BEML, we demonstrate the fluorescence/phosphorescence/fluorescence WOLED exhibits good performance with a current efficiency of 47 cd/A and an enhanced relative intensity of blue light.

Bright White Organic Light-emitting Device Based on 1,2,3,4,5,6-Hexakis(9,9-diethyl-9H-fluoren-2-yl)benzene

Organic light-emitting devices（OLEDs） with the structure of indium-tin-oxide（ITO）/N,N＇-bis-（1-naphthyl）-N,N＇-diphenyl-（1,1＇-biphenyl）-4,4＇-diamine（NPB）/2,9-dimenthyl-4,7-diphenyl-1,10-phenanthroline（BCP）/tris（8-hydroxyquinoline）aluminum（Alq3）/Mg：Ag or that of ITO/NPB/1,2,3,4,5,6-hexakis（9,9-diethyl-9H-fluoren-2-yl）benzene（HKEthFLYPh）/Alq3/Mg：Ag were studied.White light emission was achieved with the two devices when the thicknesses of BCP and HKEthFLYPh were 1.5 nm（device B） and 5 nm（device Ⅱ）,respectively.The obvious difference was that the EL spectrum of device Ⅱ was not sensitive to the thickness of HKEthFLYPh compared to that of BCP layer.Moreover,the maximum luminance of device Ⅱ was about 1000 cd/m^2 higher than that of device B at a forward bias of 15 V,and it exhibited a maximum power efficiency of 1.0 lm/W at 5.5 V,which is nearly twice that of device B.The performance of device Ⅱ using a novel star-shaped hexafluorenylbenzene organic material was improved compared with that of BCP.

Low Temperature DC Sputtering Deposition on Indium-Tin Oxide Film and Its Application to Inverted Top-emitting Organic Light-emitting Diodes

Indium tin oxide （ITO） ultrathin films were prepared on glass substrate by DC （direct current） magnetron sputtering technique with the assistance of H2O vapor to avoid potential surface damage. The film properties were characterized by X-ray diffraction （XRD） technique, four-point probe method and spectrophotometer. The results show that the deposited ITO film with introduced H2O during sputtering process was almost amorphous. The average visible light transmission of 100 nm ITO film was around 85% and square resistivity was below 80 Ω/square. The film was used as the transparent anode to fabricate an inverted top-emitting organic light-emitting diodes （IT-OLEDs） with the structure of glass substrate/Alq3 （40 nm）/NPB （15 nm）/CuPc （x nm）/ITO anode （100 nm）, where the film thickness of CuPc was optimized. It was found that the luminance of this IT-OLEDs was improved from 25 cd/m^2 to more than 527 cd/m^2 by increasing the thickness of CuPc, and luminance efficiency of 0.24 lm/W at 100 cd/m^2 was obtained, which indicated that the optimized thickness of CuPc layer was around 15 nm.