Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy （HVPE） is utilized to grow nonpolar a-plane GaN layers on r-plane sapphire templates prepared by metal organic vapor phase epitaxy （MOVPE）. The surface morphology and microstructures of the samples are characterized by atomic force microscopy. The full width at half maximum （FWHM） of the HVPE sample shows a W-shape and that of the MOVPE sample shows an M-shape plane with the degree of 0 in the high-resolution x-ray diffraction （HRXRD） results. The surface morphology attributes to this significant anisotropic. HRXRD reveals that there is a significant reduction in the FWHM, both on-axis and off-axis for HVPE GaN are compared with the MOVPE template. The decrease of the FWHM of E2 （high） Raman scat tering spectra further indicates the improvement of crystal quality after HVPE. By comparing the results of secondary- ion-mass spectroscope and photoluminescence spectrum of the samples grown by HVPE and MOVPE, we propose that C-involved defects are originally responsible for the yellow luminescence.

STUDIES ON THE DYNAMIC COMPETITIVE ADSORPTION OF ORGANIC VAPORS ON THE ACTIVATED CARBON FIBERS ACTIVATED WITH PHOSPHORIC ACID

The dynamic competitive adsorption behaviors of different binary organic vapor mixtures on ACF-Ps under different operation conditions were investigated by gas chromatography in this paper. The studied mixtures included benzene/toluene, toluene/xylene, benzene/isopropylbenzene, ethyl acetate/toluene and benzene/ethyl acetate. Experimental results show that various ACF-Ps, as with ACF-W, can remove both vapors in binary vapor mixtures with over 99% of removal efficiency before the breakthrough point of the more weakly adsorbed vapor. In dynamic competitive adsorption, the more weakly adsorbed vapor not only penetrates early, but also will be displaced and desorbed consequently by stronger adsorbate and therefore produces a rolling up in the breakthrough curve. The ACF-Ps prepared at different temperatures have somewhat different adsorption selectivity. The feed concentration ratio of vapors, the length/diameter ratio and the thick of bed have effect on competitive adsorption. The competitive adsorption ability of a vapor is mainly related to its boiling point. Usually, the higher the boiling point, the stronger the vapor adsorbed on ACF-P.

Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

AlGaN photoconductive ultraviolet detectors are fabricated to study their time response characteristics. Persistent photoconductivity, a deterring factor for the detector response time, is found to be strongly related to the grain boundary density in AlGaN epilayers. By improving the crystal-nuclei coalescence process in metal organic vapor phase epitaxy, the grain-boundary density can be reduced, resulting in an-order-of-magnitude decrease in response time.

Fhermodynamic study on dynamic water and organic vapor sorption on amorphous valnemulin hydrochloride

The sorption of water and organic vapors on valnemulin hydrochloride was determined by dynamic vapor sorption at 25℃. The adsorption-desorption behavior of water vapor and a series of organic vapors was investigated to probe the structural changes in valnemulin hydrochloride before and after sorption. The isothermal adsorption equilibrium data was evaluated using Guggenheim-Anderson-deBoer （GAB） and Bru- nauer-Emmett-Teller （BET） models. The BET model is applicable only at low relative pressures （0.1 ≤ RP ≤ 0.4） while the GAB model is applicable in the whole range of RPs （0.1 ≤RP≤0.9）. The sorption kinetics at high RPs was determined by fitting the sorption data to the Avrami equation and the sorption content vs. time relationship could be predicted by the Avrami equation. Finally, the possible sorption mechanism of valnemulin hydrochloride was also discussed.

In-situ wafer bowing measurements of GaN grown on Si(111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

In this work, the wafer bowing during growth can be in-situ measured by a reflectivity mapping method in the 3×2 Thomas Swan close coupled showerhead metal organic chemical vapor deposition（MOCVD） system. The reflectivity mapping method is usually used to measure the film thickness and growth rate. The wafer bowing caused by stresses（tensile and compressive） during the epitaxial growth leads to a temperature variation at different positions on the wafer, and the lower growth temperature leads to a faster growth rate and vice versa. Therefore, the wafer bowing can be measured by analyzing the discrepancy of growth rates at different positions on the wafer. Furthermore, the wafer bowings were confirmed by the ex-situ wafer bowing measurement. High-resistivity and low-resistivity Si substrates were used for epitaxial growth. In comparison with low-resistivity Si substrate, Ga N grown on high-resistivity substrate shows a larger wafer bowing caused by the highly compressive stress introduced by compositionally graded Al Ga N buffer layer. This transition of wafer bowing can be clearly in-situ measured by using the reflectivity mapping method.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.

Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

Analysis of vapor phase organics in air of Beijing, Langfang and Tianjin by capillary GC and GC/MS

The vapor phase organics (VPOs) in the air of Beijing, Langfang and Tianjin were detected by a capillary gas chromatography and GC/MS during the winter and the summer separately. The tentatively identified compounds include alkanes, cyclic hydrocarbons, alkenes, aromatics, acids, alcohols, aldehydes, ketones, esters, halocarbons and so on. The numbers of VPOs found are 118 in Beijing, 83 in Lang-fang and 65 in Tianjin in the winter, and 56, 39 and 72 in the summer respectively. Based on the data of some representative compounds determined quantitatively by GC and GC/MS, a profile of organic pollution in the air of the three cities is presented.

Characterization of Zn-doped GaN grown by metal–organic vapor phase epitaxy

The point defects and photoluminescence(PL)spectra of gallium nitride(GaN)epilayers with Mg,Zn,and unintentional doping were investigated in this study.The concentration of point defects(Ga vacancy and its related complexes)in the Zn-doped GaN is consistent with that in the Mg-doped GaN,but lower than that in undoped GaN.It is suggested that Zn(Mg)atoms occupy Ga sites and suppress the formation of Ga vacancies.Comparing the blue luminescence(BL)band intensity of GaN:Zn with that of GaN:Mg,a factor of 10 strong PL intensity demonstrates that a moderate incorporation of Zn to GaN is likely to improve the structural quality of GaN.Detailed studies on 2.93 eV BL band for GaN:Zn reveal that the Zn related BL band behaves as a donor-acceptor pairs character.For the acceptor level,isolated Zn_(Ga)with the activation energy of 0.386 eV above the valence band is obtained from temperature-dependent PL measurements,whereas the deep donor defect responsible for the 2.93 eV band is deduced to be 164 meV below the conduction band.An O_(N)-H complex model is suggested to explain the deep donor origin.

Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction（HRXRD） measurement showed that the full width at half maximum（FWHM） of the（0002） and（10-12） reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square（RMS） roughness was lower to 0.2 nm as tested by atomic force microscope（AFM）. The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.

GaInP/GaInAs/GaInNAs/Ge Four-Junction Solar Cell Grown by Metal Organic Chemical Vapor Deposition with High Efficiency

We directly grow a lattice matched GalnP/GalnAs/GalnNAs/Ge （1.88 eVil .42 eVil .05 eV/0.67eV） four-junction （4J） solar cell on a Ge substrate by the metal organic chemical vapor deposition technology. To solve the current limit of the GalnNAs sub cell, we design three kinds of anti-reflection coatings and adjust the base region thickness of the GalnNAs sub cell. Developed by a series of experiments, the external quantum efficiency of the GalnNAs sub cell exceeds 80%, and its current density reaches 11.24 mA/cm2. Therefore the current limit of the 4J solar cell is significantly improved. Moreover, we discuss the difference of test results between 4J and GalnP/GalnAs/Ge solar cells under the 1 sun AMO spectrum.

Fabrication of InAlGaN/GaN High Electron Mobility Transistors on Sapphire Substrates by Pulsed Metal Organic Chemical Vapor Deposition

Nearly lattice-matched InAIGaN/GaN heterostructure is grown on sapphire substrates by pulsed metal organic chemical vapor deposition and excellent high electron mobility transistors are fabricated on this heterostructure. The electron mobility is 1668.08cm2/V.s together with a high two-dimensional-electron-gas density of 1.43 × 10^13 cm-2 for the InAlCaN/CaN heterostructure of 2Onto InAlCaN quaternary barrier. High electron mobility transistors with gate dimensions of 1 × 50 μm2 and 4μm source-drain distance exhibit the maximum drain current of 763.91 mA/mm, the maximum extrinsic transconductance of 163.13 mS/mm, and current gain and maximum oscillation cutoff frequencies of 11 GHz and 21 GHz, respectively.

Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer

The effect of a self-organized SiNs interlayer on the defect density of （1122） semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffrac- tion. The SiNx interlayer reduces the c-type dislocation density from 2.5 ×10^10 cm^-2 to 5 ×10^8 cm 2. The SiNx interlayer produces regions that are free from basal plane stacking faults （BSFs） and dislocations. The overall BSF density is reduced from 2.1×10^5 cm-1 to 1.3×10^4 cm^-1. The large dislocations and BSF reduction in semipolar （1122） GaN with the SiNx, interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiNx interlayer, and the second mechanism is associated with the unique structure character of （1122） semipolar GaN.

Superior material qualities and transport properties of InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition

Pulsed metal organic chemical vapor deposition is introduced into the growth of InGaN channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free InGaN channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 x 10^13 cm-2 is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cruZ/V-s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that InGaN channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional GaN channel heterostructure. The gratifying results imply that InGaN channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.

High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition

Orthogonal experiments of Ga Sb films growth on Ga As（001） substrates have been designed and performed by using a low-pressure metal–organic chemical vapor deposition（LP-MOCVD） system. The crystallinities and microstructures of the produced films were comparatively analyzed to achieve the optimum growth parameters. It was demonstrated that the optimized Ga Sb thin film has a narrow full width at half maximum（358 arc sec） of the（004） ω-rocking curve, and a smooth surface with a low root-mean-square roughness of about 6 nm, which is typical in the case of the heteroepitaxial single-crystal films. In addition, we studied the effects of layer thickness of Ga Sb thin film on the density of dislocations by Raman spectra. It is believed that our research can provide valuable information for the fabrication of high-crystalline Ga Sb films and can promote the integration probability of mid-infrared devices fabricated on mainstream performance electronic devices.

Quantum cascade lasers grown by MOCVD

Sharing the advantages of high optical power,high efficiency and design flexibility in a compact size,quantum cascade lasers(QCLs)are excellent mid-to-far infrared laser sources for gas sensing,infrared spectroscopic,medical diagnosis,and defense applications.Metalorganic chemical vapor deposition(MOCVD)is an important technology for growing high quality semiconductor materials,and has achieved great success in the semiconductor industry due to its advantages of high efficiency,short maintenance cycles,and high stability and repeatability.The utilization of MOCVD for the growth of QCL materials holds a significant meaning for promoting the large batch production and industrial application of QCL devices.This review summarizes the recent progress of QCLs grown by MOCVD.Material quality and the structure design together determine the device performance.Research progress on the performance improvement of MOCVD-grown QCLs based on the optimization of material quality and active region structure are mainly reviewed.

Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process

This paper studied the low-resistance ohmic contacts on InAlN/GaN with metal–organic chemical vapor deposition(MOCVD)regrowth technique.The 150-nm regrown n-InGaN exhibits a low sheet resistance of 31Ω/□,resulting in an extremely low contact resistance of 0.102Ω·mm between n^(+)-InGaN and InAlN/GaN channels.Mask-free regrowth process was also used to significantly improve the sheet resistance of InAlN/GaN with MOCVD regrown ohmic contacts.Then,the diffusion mechanism between n^(+)-InGaN and InAlN during regrowth process was investigated with electrical and structural characterizations,which could benefit the further process optimization.

Migration characterization of Ga and In adatoms on dielectric surface in selective MOVPE

Migration characterizations of Ga and In adatoms on the dielectric surface in selective metal organic vapor phase epitaxy （MOVPE） were investigated. In the typical MOVPE environment, the selectivity of growth is preserved for GaN, and the growth rate of GaN micro-pyramids is sensitive to the period of the patterned SiO2 mask. A surface migration induced model was adopted to figure out the effective migration length of Ga adatoms on the dielectric surface. Different from the growth of GaN, the selective area growth of InGaN on the patterned template would induce the deposition of InGaN polycrystalline particles on the patterned Si02 mask with a long period. It was demonstrated with a scanning electron microscope and energy dispersive spectroscopy that the In adatoms exhibit a shorter migration length on the dielectric surface.

A MOVPE method for improving InGaN growth quality by pre-introducing TMIn

We propose a metal organic vapor phase epitaxy(MOVPE) method of pre-introducing TMIn during the growth of uGa N to improve the subsequent growth of In Ga N and discuss the impact of this method in detail. Monitoring the MOVPE by the interference curve generated by the laser incident on the film surface, we found that this method avoided the problem of the excessive In Ga N growth rate. Further x-ray diffraction(XRD), photoluminescence(PL), and atomic force microscope(AFM) tests showed that the quality of In Ga N is improved. It is inferred that by introducing TMIn in advance, the indium atom can replace the gallium atom in the reactor walls, delivery pipes, and other corners. Hence the auto-incorporation of gallium can be reduced when In Ga N is grown, so as to improve the material quality.

Quasi-homoepitaxial GaN-based blue light emitting diode on thick GaN template

The high power GaN-based blue light emitting diode(LED) on an 80-μm-thick GaN template is proposed and even realized by several technical methods like metal organic chemical vapor deposition(MOCVD), hydride vapor-phase epitaxial(HVPE), and laser lift-off(LLO). Its advantages are demonstrated from material quality and chip processing. It is investigated by high resolution X-ray diffraction(XRD), high resolution transmission electron microscope(HRTEM), Rutherford back-scattering(RBS), photoluminescence, current-voltage and light output-current measurements. The width of(0002) reflection in XRD rocking curve, which reaches 173 for the thick GaN template LED, is less than that for the conventional one, which reaches 258. The HRTEM images show that the multiple quantum wells(MQWs) in 80-μmthick GaN template LED have a generally higher crystal quality. The light output at 350 mA from the thick GaN template LED is doubled compared to traditional LEDs and the forward bias is also substantially reduced. The high performance of 80-μm-thick GaN template LED depends on the high crystal quality. However, although the intensity of MQWs emission in PL spectra is doubled, both the wavelength and the width of the emission from thick GaN template LED are increased. This is due to the strain relaxation on the surface of 80-μm-thick GaN template, which changes the strain in InGaN QWs and leads to InGaN phase separation.