Russian-Chinese trade began to achieve fairly rapid development in the late 1980s. In recent years, however, bilateral trade has shown a declining trend. In 1997, the amount dropped by 10.6 percent from 1996 to US$6.1...Russian-Chinese trade began to achieve fairly rapid development in the late 1980s. In recent years, however, bilateral trade has shown a declining trend. In 1997, the amount dropped by 10.6 percent from 1996 to US$6.12 billion. Whether in Moscow or Beijing, people distinctly realize that both sides earnestly hope to enhance cooperation on a brand-new basis. For this purpose, both governments are putting into practice longterm mutually beneficial large cooperation projects in areas of technological investment. In December 1997, the two sides signed the contract on展开更多
We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitri...We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitride(AIN)/sapphire templates.For this purpose,the structural and electro-optical properties of ultraviolet-c light-emitting diodes(UVC-LEDs)on as-grown and on HTA planar AlN/sapphire as well as ELO AlN/sapphire with and without HTA are investigated and compared.Cathodoluminescence measurements reveal dark spot densities of 3.5×10^9 cm^-2,1.1×10^9 cm^-2,1.4×10^9 cm^-2,and 0.9×10^9 cm^-2 in multiple quantum well samples on as-grown planar AIN/sapphire,HTA planar AlN/sapphire,ELO AlN/sapphire,and HTA ELO AlN/sapphire,respectively,and are consistent with the threading dislocation densities determined by transmission electron microscopy(TEM)and high-resolution X-ray diffraction rocking curve.The UVC-LED performance improves with the reduction of the threading dislocation densities(TDDs).The output powers(measured on-wafer in cw operation at 20 mA)of the UV-LEDs emitting at 265 nm were 0.03 mW(planar AlN/sapphire),0.8 mW(planar HTA AlN/sapphire),0.9 mW(ELO AlN/sapphire),and 1.1 mW(HTA ELO AlN/sapphire),respectively.Furthermore,Monte Carlo ray-tracing simulations showed a 15%increase in light-extraction efficiency due to the voids formed in the ELO process.These results demonstrate that HTA ELO AlN/sapphire templates provide a viable approach to increase the efficiency of UV-LEDs,improving both the internal quantum efficiency and the light-extraction efficiency.展开更多
文摘Russian-Chinese trade began to achieve fairly rapid development in the late 1980s. In recent years, however, bilateral trade has shown a declining trend. In 1997, the amount dropped by 10.6 percent from 1996 to US$6.12 billion. Whether in Moscow or Beijing, people distinctly realize that both sides earnestly hope to enhance cooperation on a brand-new basis. For this purpose, both governments are putting into practice longterm mutually beneficial large cooperation projects in areas of technological investment. In December 1997, the two sides signed the contract on
基金Bundesministerium für Bildung und Forschung(03ZZ0134C,Advanced UV for Life)Deutsche Forschungsgemeinschaft(Semiconductor Nanophotonics,Collaborative Research Centre,CRC7879315)。
文摘We report on the performance of AlGaN-based deep ultraviolet light-emitting diodes(UV-LEDs)emitting at 265 nm grown on stripe-patterned high-temperature annealed(HTA)epitaxially laterally overgrown(ELO)aluminium nitride(AIN)/sapphire templates.For this purpose,the structural and electro-optical properties of ultraviolet-c light-emitting diodes(UVC-LEDs)on as-grown and on HTA planar AlN/sapphire as well as ELO AlN/sapphire with and without HTA are investigated and compared.Cathodoluminescence measurements reveal dark spot densities of 3.5×10^9 cm^-2,1.1×10^9 cm^-2,1.4×10^9 cm^-2,and 0.9×10^9 cm^-2 in multiple quantum well samples on as-grown planar AIN/sapphire,HTA planar AlN/sapphire,ELO AlN/sapphire,and HTA ELO AlN/sapphire,respectively,and are consistent with the threading dislocation densities determined by transmission electron microscopy(TEM)and high-resolution X-ray diffraction rocking curve.The UVC-LED performance improves with the reduction of the threading dislocation densities(TDDs).The output powers(measured on-wafer in cw operation at 20 mA)of the UV-LEDs emitting at 265 nm were 0.03 mW(planar AlN/sapphire),0.8 mW(planar HTA AlN/sapphire),0.9 mW(ELO AlN/sapphire),and 1.1 mW(HTA ELO AlN/sapphire),respectively.Furthermore,Monte Carlo ray-tracing simulations showed a 15%increase in light-extraction efficiency due to the voids formed in the ELO process.These results demonstrate that HTA ELO AlN/sapphire templates provide a viable approach to increase the efficiency of UV-LEDs,improving both the internal quantum efficiency and the light-extraction efficiency.
