Microstructural Evolution and Oxidation Resistance of Multi-walled Carbon Nanotubes in the Presence of Silicon Powder at High Temperatures

The microstructural evolution and oxidation resistance of multi-walled carbon nanotubes （MWCNTs） by di- rectly heating silicon powder and MWCNTs in a coke bed from 1000 to 1500 ~C are investigated with the aid of X-ray diffraction （XRD）, scanning electron microscopy （SEM）, high resolution transmission electron microscopy （HRTEM） and thermogravimetry-differential scanning calorimetry （TG-DSC）. The results showed that the morphology and microstructure of MWCNTs did not change much after being treated from 1000 ~C to 1200 ~C. An obvious SiC coating was formed on the surface of MWCNTs from 1300 to 1400 ~C. Up to 1500 ~C, nearly all the MWCNTs transformed into SiC nanowires. The oxidation resistance of the treated MWCNTs was improved compared with as-received ones. Non-isothermal kinetics showed that the oxidation activation energy of the treated MWCNTs reached 208 kJ/mol, much higher than 264 k J/tool of as-received ones.

Morphology of Oxide Scale and Oxidation Kinetics of Low Carbon Steel

The oxidation kinetics and composition of oxide scales on low carbon steel （SPHC） were studied during i- sothermal oxidation. Thermogravimetric analyzer （TGA） was used to simulate isothermal oxidation process of SPHC for 240 min under air condition, and the temperature range was from 500 to 900 ℃. Scanning electron microscope （SEM） was used to observe cross-sectional scale morphology and analyze composition distribution of oxide scales. The morphology of oxide scale was classical three-layer structure. Fe2 03 developed as whiskers at the outermost lay- er, and interlayer was perforated-plate Fe3 04 while innermost layer was pyramidal FeO. From the oxidation curves, the oxidation mass gain per unit area with time was of parabolic relation and oxidation rate slowed down. On the ba- sis of experimental data, the isothermal oxidation kinetics model was derived and oxidation activation energy of SPHC steel was 127. 416 kJ/mol calculated from kinetics data.

Influence of N-type doping on the oxidation rate in n-type 6H-SiC

The doping dependence of dry thermal oxidation rates in n-type 6H-SiC was studied. The oxidation temperature ranged from 1050 to 1150℃ and the nitrogen doping concentration ranged from 9.53× 10^16, 1.44× 10^17, to 2.68×10^18 cm ^3. By combining the modified deal-grove model and Arrhenius equation, the linear and parabolic rate constants, and their corresponding activation energies were extracted. The results show that： higher temperature corresponded to thicker oxides; dry thermal oxidation rate in n-type 6H-SiC depended on the doping concentration; both linear-rate-constant and parabolic-rate-constant increased with the doping concentration; the parabolic activation energy increased from 0.082 to 0.104 e V, both linear and parabolic activation energies increasing with the doping concentration; and, the parabolic pre-exponential factor increased from 2.6 ×10^4 to 2.7 ×10^5nm^2/s, both linear and parabolic pre-exponential factor increasing with doping concentration. Moreover, the experiment also illustrated that it is unreasonable to use a variation of the Arrhenius activation energy to explain the doping dependence of thermal oxidation on SiC.