Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscalin...Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.展开更多
The effect of Na-excess content in the precursor on the structural and electrochemical performances of sodium nickel manganese oxide(NNMO)prepared by sol-gel and electrospinning methods is investigated in this paper.X...The effect of Na-excess content in the precursor on the structural and electrochemical performances of sodium nickel manganese oxide(NNMO)prepared by sol-gel and electrospinning methods is investigated in this paper.X-ray diffraction results of the prepared NNMO without adding Na-excess content indicate sodium loss,while the mixed phase of P2/O′3-type layered NNMO presented after adding Na-excess content.Compared with the sol-gel method,the secondary phase of NiO is more suppressed by using the electrospinning method,which is further confirmed by field emission scanning electron microscope images.N_(2) adsorption-desorption isotherms show no remarkably difference in specific surface areas between different preparation methods and Na-excess contents.The analysis of X-ray absorption near edge structure indicates that the oxidation states of Ni and Mn are+2 and+4,respectively.For the electrochemical properties,superior electrochemical performance is observed in the NNMO electrode with a low Na-excess content of 5wt%.The highest specific capacitance is 36.07 F·g^(-1)at0.1 A·g^(-1)in the NNMO electrode prepared by using the sol-gel method.By contrast,the NNMO electrode prepared using the electrospinning method with decreased Na-excess content shows excellent cycling stability of 100%after charge-discharge measurements for 300 cycles.Therefore,controlling the Na excess in the precursor together with the preparation method is important for improving the electrochemical performance of Na-based electrode materials in supercapacitors.展开更多
以直接水热合成和低硅沸石高温水蒸气脱铝两种方法制备了不同Si/Al摩尔比的HZSM-5载体,考察了Ga2O3/HZSM-5催化剂上丙烷脱氢制丙烯的反应性能.结合XRD,N2气吸附,27Al MAS NMR和NH3-TPD等表征方法,讨论了催化剂酸性质和孔性质与性能的关...以直接水热合成和低硅沸石高温水蒸气脱铝两种方法制备了不同Si/Al摩尔比的HZSM-5载体,考察了Ga2O3/HZSM-5催化剂上丙烷脱氢制丙烯的反应性能.结合XRD,N2气吸附,27Al MAS NMR和NH3-TPD等表征方法,讨论了催化剂酸性质和孔性质与性能的关系.实验结果表明,减少催化剂表面的中强酸量可以显著提高反应的稳定性和丙烯的选择性;水蒸气脱铝所增加的介孔有同样的效果,这可能是由于介孔的存在有利于丙烯的脱附和扩散而抑制了寡聚、环化等副反应的发生,减少了表面积炭的可能性.展开更多
Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and ...Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.展开更多
基金financially supported by the National Key R&D Program of China (No. 2018YFB1502203-1)the Guangdong Basic and Applied Basic Research Foundation (No. 2021B1515120087)the Stable Supporting Fund of Shenzhen, China (No. GXWD20201230155427003-202007 28114835006)
文摘Physical vapor deposition(PVD)can be used to produce high-quality Gd_(2)O_(3)-doped CeO2(GDC)films.Among various PVD methods,reactive sputtering provides unique benefits,such as high deposition rates and easy upscaling for industrial applications.GDC thin films were successfully fabricated through reactive sputtering using a Gd_(0.2)Ce_(0.8)(at%)metallic target,and their application in solid oxide fuel cells,such as buffer layers between yttria-stabilized zirconia(YSZ)/La0.6Sr0.4Co0.2Fe0.8O_(3−δ)and as sublayers in the steel/coating system,was evaluated.First,the direct current(DC)reactive-sputtering behavior of the GdCe metallic target was determined.Then,the GDC films were deposited on NiO-YSZ/YSZ half-cells to investigate the influence of oxygen flow rate on the quality of annealed GDC films.The results demonstrated that reactive sputtering can be used to prepare thin and dense GDC buffer layers without high-temperature sintering.Furthermore,the cells with a sputtered GDC buffer layer showed better electrochemical performance than those with a screen-printed GDC buffer layer.In addition,the insertion of a GDC sublayer between the SUS441 interconnects and the Mn-Co spinel coatings contributed to the reduction of the oxidation rate for SUS441 at operating temperatures,according to the area-specific resistance tests.
基金financially supported by (i) Suranaree University of Technology,(ii) Thailand Science Research and Innovation,and (iii) National Science,Research and Innovation Fund(project codes 90464 and 160363)。
文摘The effect of Na-excess content in the precursor on the structural and electrochemical performances of sodium nickel manganese oxide(NNMO)prepared by sol-gel and electrospinning methods is investigated in this paper.X-ray diffraction results of the prepared NNMO without adding Na-excess content indicate sodium loss,while the mixed phase of P2/O′3-type layered NNMO presented after adding Na-excess content.Compared with the sol-gel method,the secondary phase of NiO is more suppressed by using the electrospinning method,which is further confirmed by field emission scanning electron microscope images.N_(2) adsorption-desorption isotherms show no remarkably difference in specific surface areas between different preparation methods and Na-excess contents.The analysis of X-ray absorption near edge structure indicates that the oxidation states of Ni and Mn are+2 and+4,respectively.For the electrochemical properties,superior electrochemical performance is observed in the NNMO electrode with a low Na-excess content of 5wt%.The highest specific capacitance is 36.07 F·g^(-1)at0.1 A·g^(-1)in the NNMO electrode prepared by using the sol-gel method.By contrast,the NNMO electrode prepared using the electrospinning method with decreased Na-excess content shows excellent cycling stability of 100%after charge-discharge measurements for 300 cycles.Therefore,controlling the Na excess in the precursor together with the preparation method is important for improving the electrochemical performance of Na-based electrode materials in supercapacitors.
文摘以直接水热合成和低硅沸石高温水蒸气脱铝两种方法制备了不同Si/Al摩尔比的HZSM-5载体,考察了Ga2O3/HZSM-5催化剂上丙烷脱氢制丙烯的反应性能.结合XRD,N2气吸附,27Al MAS NMR和NH3-TPD等表征方法,讨论了催化剂酸性质和孔性质与性能的关系.实验结果表明,减少催化剂表面的中强酸量可以显著提高反应的稳定性和丙烯的选择性;水蒸气脱铝所增加的介孔有同样的效果,这可能是由于介孔的存在有利于丙烯的脱附和扩散而抑制了寡聚、环化等副反应的发生,减少了表面积炭的可能性.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241)the Beijing Municipal Commission of Science and Technology,China(Grant No.SX2018-04)
文摘Gallium oxide(Ga_2O_3), a typical ultra wide bandgap semiconductor, with a bandgap of ~4.9 e V, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices.Recently, a keen interest in employing Ga_2O_3 in power devices has been aroused. Many researches have verified that Ga_2O_3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors(FETs) and Schottky barrier diodes(SBDs) based on Ga_2O_3, which may provide a guideline for Ga_2O_3 to be preferably used in power devices fabrication.
