Recent advances in inkjet printing synthesis of functional metal oxides

lnkjet printing （IJP） synthesis has emerged as a useful technique for the fabrication of functional metal oxides in the fields of nanotechnology and materials science. In this paper, we will review the fundamental state-of-the-art principles of the special ink formulations used for IJP synthesis of functional metal oxides and the applications of these oxides.

3D printing of architectured graphene-based aerogels by cross-linking GO inks with adjustable viscoelasticity for energy storage devices

Three-dimensional(3D)functional graphenebased architecture with superior electrical conductivity and good mechanical strength has promising applications in energy storage and electrics.Viscoelasticity-adjustable inks make it possible to achieve desired 3D architectures with interconnected and continuous interior networks by microextrusion printing.In this work,ultra-low-concentration graphene oxide(GO)inks of~15 mg·ml-1 have been obtained and demonstrated in direct 3D printing with a facile cross-linking(direct ink writing).The rheological behavior of the GO strategy by cations,which is the lowest concentration to achieve direct ink writing inks,could be adjusted from 1×10^(4) to 1×10^(5) Pa·s^(-1) with different concentrations of cations due to strong cross-linking networks between GO sheets and cations.Meanwhile,the specific strength and electrical conductivity of 3D-printed graphene architecture are notably enhanced,reaching up to 51.7×10^(3) N·m·kg^(-1)and 119 S·m^(-1),which are superior to conventional graphene aerogels.Furthermore,3D printing graphene-based architecture assembled in micro-superc apacitor exhibits excellent electrochemical performance,which can be ascribed to the effective ion transportation through the interconnected networks.The strategy demonstrated is useful in the design of complex-shaped,graphene-based architectures for scalable manufacturing of practical energy storage applications.

Enhancement of adjustable localized surface plasmon resonance in ZnO nanocrystals via a dual doping approach

Recently, the localized surface plasmon resonance （LSPR） concept was expanded from noble metals to doped semiconductor nanocrystals （NCs）. However, the strengthening of the intrinsically very weak LSPR in NCs remains a great challenge for its applications in optics, electronics and optoelectronics fields. In this work, we report on the remarkable strengthening and controllability of LSPR in ZnO through a dual-doping strategy. First, high quality In-doped ZnO （IZO） NCs with intense LSPR were synthesized by a simple single-pot method. Importantly, the LSPR can be tuned by simply adjusting the concentration of In dopant, as well as by UV light irradiation （photo-induced doping）. The pattern of electricity of an IZO NC film matches the shift of LSPR independent of dopant concentration. The UV light irradiation clearly enhanced the electrical properties of the films （350 fl/sq） due to increase carrier density explained by LSPR and confirmed by X-ray photoelectron spectroscopy, The IZO NCs can be easily dispersed in various organic solvents and serve as inks for assembling uniform films via solution processes. These IZO NC ink is promising for application in next-generation solution-based field effect transistors and other optoelec- tronic devices.