SL(2,R)上的Hardy-Littlewood极大函数的性质

本文给出了SL(2,R)上的Hardy-Littlewood极大函数mf的定义,利用Ergodic定理证明了Hardy-Littlewood极大函数的强(p,p)型性质,p>1.

Controlled one step thinning and doping of twodimensional transition metal dichalcogenides

Two-dimensional(2 D) transition metal dichalcogenides(TMDCs) have drawn intensive attention due to their ultrathin feature with excellent electrostatic gating capability, and unique thickness-dependent electronic and optical properties. Controlling the thickness and doping of 2 D TMDCs are crucial toward their future applications. Here, we report an effective HAu Cl4 treatment method and achieve simultaneous thinning and doping of various TMDCs in one step. We find that the HAu Cl4 treatment not only thins thick Mo S2 flakes into few layers or even monolayers, but also simultaneously tunes Mo S2 into p-type. The effects of various parameters in the process have been studied systematically,and an Au intercalation assisted thinning and doping mechanism is proposed. Importantly, this method also works for other typical TMDCs, including WS2, Mo Se2 and WSe2,showing good universality. Electrical transport measurements of field-effect transistors(FETs) based on Mo S2 flakes show a big increase of On/Off current ratios(from 102 to 107) after the HAu Cl4 treatment. Meanwhile, the subthreshold voltages of the Mo S2 FETs shift from-60 to +27 V after the HAu Cl4 treatment, with a p-type doping behavior. This study provides an effective and simple method to control the thickness and doping properties of 2 D TMDCs, paving a way for their applications in high performance electronics and optoelectronics.

Nickel-coated silicon photocathode for water splitting in alkaline electrolytes

Photoelectrochemical （PEC） water splitting is a promising approach to harvest and store solar energy [1]. Silicon has been widely investigated for PEC photoelectrodes due to its suitable band gap （1.12 eV） matching the solar spectrum [2]. Here we investigate employing nickel both as a catalyst and protecting layer of a p-type silicon photocathode for photoelectrochemical hydrogen evolution in basic electrolytes for the first time. The silicon photocathode was made by depositing 15 nm Ti on a p-type silicon wafer followed by 5 nm Ni. The photocathode afforded an onset potential of -0.3 V vs. the reversible hydrogen electrode （RHE） in alkaline solution （1 M KOH）. The stability of the Ni/Ti/p-Si photocathode showed a 100 mV decay over 12 h in KOH, but the stability was significantly improved when the photocathode was operated in potassium borate buffer solution （pH ≈ 9.5）. The electrode surface was found to remain intact after 12 h of continuous operation at a constant current density of 10 mA/cm^2 in potassium borate buffer, suggesting that Ni affords good protection of Si based photocathodes in borate buffers.

Effects of p-type GaN thickness on optical properties of Ga N-based light-emitting diodes

The influence of p-type Ga N(p Ga N) thickness on the light output power(LOP) and internal quantum efficiency(IQE) of light emitting diode(LED) was studied by experiments and simulations. The LOP of Ga N-based LED increases as the thickness of p Ga N layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pG a N increases by 30.9% compared with that of the conventional LED with 300-nm-thick p Ga N. The variation trend of IQE is similar to that of LOP as the decrease of Ga N thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick p Ga N is ascribed to the improvements of the carrier concentrations and recombination rates.