Let L/F be a finite Galois extension of number fields of degree n and let p be a prime which does not divide n.We shall study the pj-rank of K_(2i)(O_(L))via its Galois module structure following the approaches of Iwa...Let L/F be a finite Galois extension of number fields of degree n and let p be a prime which does not divide n.We shall study the pj-rank of K_(2i)(O_(L))via its Galois module structure following the approaches of Iwasawa and Komatsu–Nakano.Along the way,we generalize previous observations of Browkin,Wu and Zhou on K2-groups to higher even K-groups.We also give examples to illustrate our results.Finally,we apply our discussion to refine a result of Kitajima pertaining to the p-rank of even K-groups in the cyclotomic Z_(l)-extension,where l≠p.展开更多
Amorphous–microcrystalline MoS_(2)thin films are fabricated using the sol-gel method to produce MoS_(2)/Si-based solar cells. The generation mechanisms of the S-shaped current density–voltage(J–V) curves of the sol...Amorphous–microcrystalline MoS_(2)thin films are fabricated using the sol-gel method to produce MoS_(2)/Si-based solar cells. The generation mechanisms of the S-shaped current density–voltage(J–V) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped J–V curve, a MoS_(2)film and a p^(+) layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p–n junction between the p-Si and the MoS_(2)film as well as ohmic contacts between the MoS_(2)film and the ITO, improving the S-shaped J–V curve. As a result of the high doping characteristics and the high work function of the p^(+) layer, a high–low junction is formed between the p;and p layers along with ohmic contacts between the p;layer and the Ag electrode. Consequently,the S-shaped J–V curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p–n junction rectification characteristics and achieves a high power-conversion efficiency(CE) of 7.55%. The findings of this study may improve the application of MoS_(2)thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.展开更多
基金Supported by National Natural Science Foundation of China(Grant No.11771164)the Fundamental Research Funds for the Central Universities of CCNU(Grant No.CCNU20TD002)。
文摘Let L/F be a finite Galois extension of number fields of degree n and let p be a prime which does not divide n.We shall study the pj-rank of K_(2i)(O_(L))via its Galois module structure following the approaches of Iwasawa and Komatsu–Nakano.Along the way,we generalize previous observations of Browkin,Wu and Zhou on K2-groups to higher even K-groups.We also give examples to illustrate our results.Finally,we apply our discussion to refine a result of Kitajima pertaining to the p-rank of even K-groups in the cyclotomic Z_(l)-extension,where l≠p.
基金Project supported by the Science and Technology Research Project of Hebei Province Colleges and Universities (Grant No. QN2020113)Tangshan Applied Basic Research Project (Grant No. 19130227g)。
文摘Amorphous–microcrystalline MoS_(2)thin films are fabricated using the sol-gel method to produce MoS_(2)/Si-based solar cells. The generation mechanisms of the S-shaped current density–voltage(J–V) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped J–V curve, a MoS_(2)film and a p^(+) layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p–n junction between the p-Si and the MoS_(2)film as well as ohmic contacts between the MoS_(2)film and the ITO, improving the S-shaped J–V curve. As a result of the high doping characteristics and the high work function of the p^(+) layer, a high–low junction is formed between the p;and p layers along with ohmic contacts between the p;layer and the Ag electrode. Consequently,the S-shaped J–V curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p–n junction rectification characteristics and achieves a high power-conversion efficiency(CE) of 7.55%. The findings of this study may improve the application of MoS_(2)thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.
