Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface a...Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus （P） diffusion by liquid dopant source （POCl3） at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy （XPS） is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.展开更多
The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier...The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation- recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equa- tions are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO2 thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance （MR） can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.展开更多
Monolayer transition-metal dichalcogenides （TMDs） are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing ...Monolayer transition-metal dichalcogenides （TMDs） are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing to their direct band gap, transparency, and mechanical flexibility. The core element of many conventional electronic and optoelectronic devices is the p-n junction, in which the p- and n-types of the semiconductor are formed by chemical doping in different regions. Here, we report a series of optoelectronic studies on a monolayer WSe2 in-plane p-n photodetector, demonstrating a low- power dissipation by showing an ambipolar behavior with a reduced threshold voltage by a factor of two compared with the previous results on a lateral electrostatically doped WSe2 p-n junction. The fabrication of the device is based on a polycarbonates （PC） transfer technique and hence no electron-beam exposure induced damage to the monolayer WSe2 is expected. Upon optical excitation, the photodetector demonstrates a photoresponsivity of 0.12 mA.W-1 and a maximum external quantum efficiency of 0.03%. Our study provides an alternative platform for a flexible and transparent two- dimensional photodetector, from which we expect to further promote the development of next-generation optoelectronic devices.展开更多
To study non-structural carbohydrate character-istics and nutrient utilization strategies of Pinus yunnanen-sis under continuous drought conditions,2-year-old seed-lings were planted in pots with appropriate water,lig...To study non-structural carbohydrate character-istics and nutrient utilization strategies of Pinus yunnanen-sis under continuous drought conditions,2-year-old seed-lings were planted in pots with appropriate water,light and moderate and severe drought treatments[(80±5),(65±5),(50±5),and(35±5)%of field water-holding capacity].Non-structural carbohydrates,carbon(C),nitrogen(N),and phosphorus(P)concentrations were measured in each plant component.The results show that:(1)With increasing drought,non-structural carbohydrates gradually increased in leaves,stems,and coarse roots,while gradually decreased in fine roots;(2)C concentrations of all were relatively stable under different stress levels.Phosphorous utilization of each component increased under light and moderate drought conditions,while N and P utilization efficiency of each plant component decreased under severe drought.Growth was mainly restricted by N,first decreasing and then increasing with increased drought;(3)There was a correlation between the levels of non-structural carbohydrates and C,N,and P in each component.Changes in N concentration affected the interconversion between soluble sugar and starch,which play a regulatory role in the fluctuation of the concentration of non-structural carbohydrates;and,(4)Plasticity analysis showed that P.yunnanensis seedlings responded to drought mainly by altering starch concentration,the ratio of soluble sugar to starch in leaves and stems,and further by alter-ing N and P utilization efficiencies.Overall,these results suggest that the physiological activities of all organs of P.yunnanensis seedlings are restricted under drought and that trade-offs exist between different physiological indicators and organs.Our findings are helpful in understanding non-structural carbohydrate and nutrient adaptation mechanisms under drought in P.yunnanensis seedlings.展开更多
Background:Nitrogen(N)deposition affects forest stoichiometric flexibility through changing soil nutrient availability to influence plant uptake.However,the effect of N deposition on the flexibility of carbon(C),N,and...Background:Nitrogen(N)deposition affects forest stoichiometric flexibility through changing soil nutrient availability to influence plant uptake.However,the effect of N deposition on the flexibility of carbon(C),N,and phosphorus(P)in forest plant-soil-microbe systems remains unclear.Methods:We conducted a meta-analysis based on 751 pairs of observations to evaluate the responses of plant,soil and microbial biomass C,N and P nutrients and stoichiometry to N addition in different N intensity(050,50–100,>100 kg·ha^(-1)·year^(-1)of N),duration(0–5,>5 year),method(understory,canopy),and matter(ammonium N,nitrate N,organic N,mixed N).Results:N addition significantly increased plant N:P(leaf:14.98%,root:13.29%),plant C:P(leaf:6.8%,root:25.44%),soil N:P(13.94%),soil C:P(10.86%),microbial biomass N:P(23.58%),microbial biomass C:P(12.62%),but reduced plant C:N(leaf:6.49%,root:9.02%).Furthermore,plant C:N:P stoichiometry changed significantly under short-term N inputs,while soil and microorganisms changed drastically under high N addition.Canopy N addition primarily affected plant C:N:P stoichiometry through altering plant N content,while understory N inputs altered more by influencing soil C and P content.Organic N significantly influenced plant and soil C:N and C:P,while ammonia N changed plant N:P.Plant C:P and soil C:N were strongly correlated with mean annual precipitation(MAT),and the C:N:P stoichiometric flexibility in soil and plant under N addition connected with soil depth.Besides,N addition decoupled the correlations between soil microorganisms and the plant.Conclusions:N addition significantly increased the C:P and N:P in soil,plant,and microbial biomass,reducing plant C:N,and aggravated forest P limitations.Significantly,these impacts were contingent on climate types,soil layers,and N input forms.The findings enhance our comprehension of the plant-soil system nutrient cycling mechanisms in forest ecosystems and plant strategy responses to N deposition.展开更多
In this paper,we investigate sufficient and necessary conditions such that generalized Forelli-Rudin type operators T_(λ,τ,k),S_(λ,τ,k),Q_(λ,τ,k)and R_(λ,τ,k)are bounded between Lebesgue type spaces.In order t...In this paper,we investigate sufficient and necessary conditions such that generalized Forelli-Rudin type operators T_(λ,τ,k),S_(λ,τ,k),Q_(λ,τ,k)and R_(λ,τ,k)are bounded between Lebesgue type spaces.In order to prove the main results,we first give some bidirectional estimates for several typical integrals.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.50972144)
文摘Silicon nanopillars are fabricated by inductively coupled plasma （ICP） dry etching with the cesium chloride （CsCl） islands as masks originally from self-assembly. Wafers with nanopillar texture or planar surface are subjected to phosphorus （P） diffusion by liquid dopant source （POCl3） at 870 ℃ to form P-N junctions with a depth of 300 nm. The X-ray photoelectron spectroscopy （XPS） is used to measure the Si 2p core levels of P-N junction wafer with nanopillar texture and planar surface. With a visible light excitation, the P-N junction produces a new electric potential for photoelectric characteristic, which causes the Si 2p core level to have a energy shift compared with the spectrum without the visible light. The energy shift of the Si 2p core level is -0.27 eV for the planar P-N junction and -0.18 eV for the nanopillar one. The difference in Si 2p energy shift is due to more space lattice defects and chemical bond breaks for nanopillar compared with the planar one.
文摘The magnetoresistance effect of a p-n junction under an electric field which is introduced by the gate voltage at room temperature is investigated by simulation. As auxiliary models, the Lombardi CVT model and carrier generation- recombination model are introduced into a drift-diffusion transport model and carrier continuity equations. All the equa- tions are discretized by the finite-difference method and the box integration method and then solved by Newton iteration. Taking advantage of those models and methods, an abrupt junction with uniform doping is studied systematically, and the magnetoresistance as a function of doping concentration, SiO2 thickness and geometrical size is also investigated. The simulation results show that the magnetoresistance （MR） can be controlled substantially by the gate and is dependent on the polarity of the magnetic field.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFA0301700)the National Natural Science Foundation of China(Grant Nos.61590932,11774333,61674132,11674300,11575172,and 11625419)+2 种基金the Anhui Provincial Initiative in Quantum Information Technologies,China(Grant Nos.AHY080000 and AHY130300)the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB24030601)the Fundamental Research Funds for the Central Universities,China
文摘Monolayer transition-metal dichalcogenides （TMDs） are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing to their direct band gap, transparency, and mechanical flexibility. The core element of many conventional electronic and optoelectronic devices is the p-n junction, in which the p- and n-types of the semiconductor are formed by chemical doping in different regions. Here, we report a series of optoelectronic studies on a monolayer WSe2 in-plane p-n photodetector, demonstrating a low- power dissipation by showing an ambipolar behavior with a reduced threshold voltage by a factor of two compared with the previous results on a lateral electrostatically doped WSe2 p-n junction. The fabrication of the device is based on a polycarbonates （PC） transfer technique and hence no electron-beam exposure induced damage to the monolayer WSe2 is expected. Upon optical excitation, the photodetector demonstrates a photoresponsivity of 0.12 mA.W-1 and a maximum external quantum efficiency of 0.03%. Our study provides an alternative platform for a flexible and transparent two- dimensional photodetector, from which we expect to further promote the development of next-generation optoelectronic devices.
基金supported by the National Natural Science Foundation of China (Nos.52274295,52104291,51874079)the Natural Science Foundation of Hebei Province,China (Nos.E2022501028,E2022501029,E2021501029,A2021501007,E2018501091,E2020501001,E2022501030)+4 种基金the Hebei Province Key Research and Development Plan Project,China (No.19211302D)Performance Subsidy Fund for Key Laboratory of Dielectric and Electrolyte Functional Material Hebei Province,China (No.22567627H)the Fundamental Research Funds for the Central Universities,China (Nos.N2223009,N2223010,N2123035,N2023040)the Science and Technology Project of Hebei Education Department,China (No.ZD2022158)the Central Guided Local Science and Technology Development Fund Project of Hebei Province,China (No.226Z4401G).
基金This study was supported by the National Natural Science Foundation of China(31960306).
文摘To study non-structural carbohydrate character-istics and nutrient utilization strategies of Pinus yunnanen-sis under continuous drought conditions,2-year-old seed-lings were planted in pots with appropriate water,light and moderate and severe drought treatments[(80±5),(65±5),(50±5),and(35±5)%of field water-holding capacity].Non-structural carbohydrates,carbon(C),nitrogen(N),and phosphorus(P)concentrations were measured in each plant component.The results show that:(1)With increasing drought,non-structural carbohydrates gradually increased in leaves,stems,and coarse roots,while gradually decreased in fine roots;(2)C concentrations of all were relatively stable under different stress levels.Phosphorous utilization of each component increased under light and moderate drought conditions,while N and P utilization efficiency of each plant component decreased under severe drought.Growth was mainly restricted by N,first decreasing and then increasing with increased drought;(3)There was a correlation between the levels of non-structural carbohydrates and C,N,and P in each component.Changes in N concentration affected the interconversion between soluble sugar and starch,which play a regulatory role in the fluctuation of the concentration of non-structural carbohydrates;and,(4)Plasticity analysis showed that P.yunnanensis seedlings responded to drought mainly by altering starch concentration,the ratio of soluble sugar to starch in leaves and stems,and further by alter-ing N and P utilization efficiencies.Overall,these results suggest that the physiological activities of all organs of P.yunnanensis seedlings are restricted under drought and that trade-offs exist between different physiological indicators and organs.Our findings are helpful in understanding non-structural carbohydrate and nutrient adaptation mechanisms under drought in P.yunnanensis seedlings.
基金supported by the National Natural Science Foundation of China(Nos.31800369,32271686,U1904204)the State Scholarship Fund of Chinathe Innovation Scientists and Technicians Troop Construction Projects of Henan Province(No.182101510005)。
文摘Background:Nitrogen(N)deposition affects forest stoichiometric flexibility through changing soil nutrient availability to influence plant uptake.However,the effect of N deposition on the flexibility of carbon(C),N,and phosphorus(P)in forest plant-soil-microbe systems remains unclear.Methods:We conducted a meta-analysis based on 751 pairs of observations to evaluate the responses of plant,soil and microbial biomass C,N and P nutrients and stoichiometry to N addition in different N intensity(050,50–100,>100 kg·ha^(-1)·year^(-1)of N),duration(0–5,>5 year),method(understory,canopy),and matter(ammonium N,nitrate N,organic N,mixed N).Results:N addition significantly increased plant N:P(leaf:14.98%,root:13.29%),plant C:P(leaf:6.8%,root:25.44%),soil N:P(13.94%),soil C:P(10.86%),microbial biomass N:P(23.58%),microbial biomass C:P(12.62%),but reduced plant C:N(leaf:6.49%,root:9.02%).Furthermore,plant C:N:P stoichiometry changed significantly under short-term N inputs,while soil and microorganisms changed drastically under high N addition.Canopy N addition primarily affected plant C:N:P stoichiometry through altering plant N content,while understory N inputs altered more by influencing soil C and P content.Organic N significantly influenced plant and soil C:N and C:P,while ammonia N changed plant N:P.Plant C:P and soil C:N were strongly correlated with mean annual precipitation(MAT),and the C:N:P stoichiometric flexibility in soil and plant under N addition connected with soil depth.Besides,N addition decoupled the correlations between soil microorganisms and the plant.Conclusions:N addition significantly increased the C:P and N:P in soil,plant,and microbial biomass,reducing plant C:N,and aggravated forest P limitations.Significantly,these impacts were contingent on climate types,soil layers,and N input forms.The findings enhance our comprehension of the plant-soil system nutrient cycling mechanisms in forest ecosystems and plant strategy responses to N deposition.
基金supported by the Natural Science Foundation of Hunan Province of China(2022JJ30369)the Education Department Important Foundation of Hunan Province in China(23A0095)。
文摘In this paper,we investigate sufficient and necessary conditions such that generalized Forelli-Rudin type operators T_(λ,τ,k),S_(λ,τ,k),Q_(λ,τ,k)and R_(λ,τ,k)are bounded between Lebesgue type spaces.In order to prove the main results,we first give some bidirectional estimates for several typical integrals.
