从接触电阻、反射率、电流扩展等方面对Ni/Au/Ag,ITO/Ag,Ag等多种倒装结构p电极金属体系进行分析比较,给出了实现倒装结构大功率GaN LED p电极的多种设计方案.指出Ni/Au金属化体系在大功率LED应用中存在的热稳定性问题及Ru,Ir等新型金...从接触电阻、反射率、电流扩展等方面对Ni/Au/Ag,ITO/Ag,Ag等多种倒装结构p电极金属体系进行分析比较,给出了实现倒装结构大功率GaN LED p电极的多种设计方案.指出Ni/Au金属化体系在大功率LED应用中存在的热稳定性问题及Ru,Ir等新型金属体系实现GaN p电极接触的潜在优势.展开更多
Co-P （4.9% P） powders with a chain-like morphology were prepared by a novel chemical reduction method. The Co-P and germanium powders were mixed at various mass ratios to form Co-P composite electrodes. Charge and d...Co-P （4.9% P） powders with a chain-like morphology were prepared by a novel chemical reduction method. The Co-P and germanium powders were mixed at various mass ratios to form Co-P composite electrodes. Charge and discharge test and electrochemical impedance spectroscopy （EIS） were carried out to investigate the electrochemical performance, which can be significantly improved by the addition of germanium. For instance, when the mass ratio of Co-P powders to germanium is 5：1, the sample electrode shows a reversible discharge capacity of 350.3 mA·h/g and a high capacity retention rate of 95.9% after 50 cycles. The results of cyclic voltammmetry （CV） show the reaction mechanism of Co/Co（OH）2 within Co-P composite electrodes and EIS indicates that this electrode shows a low charge-transfer resistance, facilitating the oxidation of Co to Co（OH）2.展开更多
The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal dif...The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.展开更多
The quality of perovskite layers has a great impact on the performance of perovskite solar cells(PSCs).However,defects and related trap sites are generated inevitably in the solutionprocessed polycrystalline perovskit...The quality of perovskite layers has a great impact on the performance of perovskite solar cells(PSCs).However,defects and related trap sites are generated inevitably in the solutionprocessed polycrystalline perovskite films.It is meaningful to reduce and passivate the defect states by incorporating additive into the perovskite layer to improve perovskite crystallization.Here an environmental friendly 2D nanomaterial protonated graphitic carbon nitride(p-g-C_(3)N_(4))was successfully synthesized and doped into perovskite layer of carbon-based PSCs.The addition of p-g-C_(3)N_(4)into perovskite precursor solution not only adjusts nucleation and growth rate of methylammonium lead tri-iodide(MAPb I3)crystal for obtaining flat perovskite surface with larger grain size,but also reduces intrinsic defects of perovskite layer.It is found that thep-g-C_(3)N_(4) locates at the perovskite core,and the active groups-NH_(2)/NH_(3)and NH have a hydrogen bond strengthening,which effectively passivates electron traps and enhances the crystal quality of perovskite.As a result,a higher power conversion efficiency of 6.61% is achieved,compared with that doped with g-C_(3)N_(4)(5.93%)and undoped one(4.48%).This work demonstrates a simple method to modify the perovskite film by doping new modified additives and develops a low-cost preparation for carbon-based PSCs.展开更多
In this project, different combinations of solar energy and heat pump systems for preparation of DHW （domestic hot water） and space heating of buildings are analyzed through dynamic system simulations in TRNSYS （Tr...In this project, different combinations of solar energy and heat pump systems for preparation of DHW （domestic hot water） and space heating of buildings are analyzed through dynamic system simulations in TRNSYS （Transient System Simulation Program）. In such systems, solar thermal energy can be used, on one hand, directly to charge the buffer storage and, on the other hand, as heat source for the evaporator oftbe HP （heat pump）. In this work systems, in which solar heat is only used directly （parallel operation of solar and HP）, systems using the collectors also as a heat source for the HP are analyzed and compared to conventional air HP systems. With a combined parallel solar thermal HP system, the system performance compared to a conventional HP system can be significantly increased. Unglazed selectively coated collectors as source for the HP have the advantage that the collector can be used as an air heat exchanger. If solar radiation is available and the collector is used as source for the HP, higher temperatures at the evaporator of the HP can be achieved than with a conventional air HP system.展开更多
We classify completely three-generator finite p-groups G such that Ф(G)≤Z(G)and|G′|≤p2.This paper is a part of the classification of finite p-groups with a minimal non-abelian subgroup of index p,and solve partly ...We classify completely three-generator finite p-groups G such that Ф(G)≤Z(G)and|G′|≤p2.This paper is a part of the classification of finite p-groups with a minimal non-abelian subgroup of index p,and solve partly a problem proposed by Berkovich.展开更多
Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exh...Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.展开更多
文摘从接触电阻、反射率、电流扩展等方面对Ni/Au/Ag,ITO/Ag,Ag等多种倒装结构p电极金属体系进行分析比较,给出了实现倒装结构大功率GaN LED p电极的多种设计方案.指出Ni/Au金属化体系在大功率LED应用中存在的热稳定性问题及Ru,Ir等新型金属体系实现GaN p电极接触的潜在优势.
基金Project supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions of ChinaProject(CXLX11_0359)supported by Research Innovative Projects for Average College Graduate Students of 2011 in Jiangsu Province,China+2 种基金Project(RERU2011010)supported by Open Subject of State Key Laboratory of Rare Earth Resource Utilization,ChinaProject(51201089)supported by the National Natural Science Foundation of ChinaProject(CPSF2012M521064)supported by China Postdoctoral Science Foundation
文摘Co-P （4.9% P） powders with a chain-like morphology were prepared by a novel chemical reduction method. The Co-P and germanium powders were mixed at various mass ratios to form Co-P composite electrodes. Charge and discharge test and electrochemical impedance spectroscopy （EIS） were carried out to investigate the electrochemical performance, which can be significantly improved by the addition of germanium. For instance, when the mass ratio of Co-P powders to germanium is 5：1, the sample electrode shows a reversible discharge capacity of 350.3 mA·h/g and a high capacity retention rate of 95.9% after 50 cycles. The results of cyclic voltammmetry （CV） show the reaction mechanism of Co/Co（OH）2 within Co-P composite electrodes and EIS indicates that this electrode shows a low charge-transfer resistance, facilitating the oxidation of Co to Co（OH）2.
文摘The influence of thermal treatment on Si 1-x Ge x/Si multiple-quantum wells (MQW) p-i-n photodiodes has been investigated by photocurrent spectroscopy combined with X-ray double crystal diffraction.The cutoff wavelength is significantly reduced due to the Si-Ge interdiffusion and partial relaxation of the strained SiGe alloy.The values of the blue shift increase slowly with the annealing temperatures in the range of 750℃ to 850℃.However,the nonlinear changes in photocurrent intensities of the samples annealed at different temperatures have been observed,which is mainly dominated by the generation of misfit dislocations and the reduction of the point defects in the heating process.
基金supported by the Natural Science Foundation of Liaoning Province(No.20170540086)the Open Fund of the State Key Laboratory of Molecular Reaction Dynamics in Dalian Institute of Chemical Physics,Chinese Academy of Sciences(SKLMRD-K202107,K202216)。
文摘The quality of perovskite layers has a great impact on the performance of perovskite solar cells(PSCs).However,defects and related trap sites are generated inevitably in the solutionprocessed polycrystalline perovskite films.It is meaningful to reduce and passivate the defect states by incorporating additive into the perovskite layer to improve perovskite crystallization.Here an environmental friendly 2D nanomaterial protonated graphitic carbon nitride(p-g-C_(3)N_(4))was successfully synthesized and doped into perovskite layer of carbon-based PSCs.The addition of p-g-C_(3)N_(4)into perovskite precursor solution not only adjusts nucleation and growth rate of methylammonium lead tri-iodide(MAPb I3)crystal for obtaining flat perovskite surface with larger grain size,but also reduces intrinsic defects of perovskite layer.It is found that thep-g-C_(3)N_(4) locates at the perovskite core,and the active groups-NH_(2)/NH_(3)and NH have a hydrogen bond strengthening,which effectively passivates electron traps and enhances the crystal quality of perovskite.As a result,a higher power conversion efficiency of 6.61% is achieved,compared with that doped with g-C_(3)N_(4)(5.93%)and undoped one(4.48%).This work demonstrates a simple method to modify the perovskite film by doping new modified additives and develops a low-cost preparation for carbon-based PSCs.
文摘In this project, different combinations of solar energy and heat pump systems for preparation of DHW （domestic hot water） and space heating of buildings are analyzed through dynamic system simulations in TRNSYS （Transient System Simulation Program）. In such systems, solar thermal energy can be used, on one hand, directly to charge the buffer storage and, on the other hand, as heat source for the evaporator oftbe HP （heat pump）. In this work systems, in which solar heat is only used directly （parallel operation of solar and HP）, systems using the collectors also as a heat source for the HP are analyzed and compared to conventional air HP systems. With a combined parallel solar thermal HP system, the system performance compared to a conventional HP system can be significantly increased. Unglazed selectively coated collectors as source for the HP have the advantage that the collector can be used as an air heat exchanger. If solar radiation is available and the collector is used as source for the HP, higher temperatures at the evaporator of the HP can be achieved than with a conventional air HP system.
基金supported by National Natural Science Foundation of China (Grant No. 11371232)Natural Science Foundation of Shanxi Province (Grant Nos. 2012011001-3 and 2013011001-1)
文摘We classify completely three-generator finite p-groups G such that Ф(G)≤Z(G)and|G′|≤p2.This paper is a part of the classification of finite p-groups with a minimal non-abelian subgroup of index p,and solve partly a problem proposed by Berkovich.
基金This work was supported by the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China （Nos. 61322407, 11474058, and 11322441）, the Chinese Na- tional Science Fund for Talent Training in Basic Science （No. J1103204）, and Ten Thousand Talents Program for young talents. Part of the sample fabrication was performed at Fudan Nano-fabrication Laboratory. We acknowledge Yuanbo Zhang, Yizheng Wu, Zuimin Jiang, Likai Li, Boliang Chen for great assistance during the device fabrication and measurements.
文摘Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.
