In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide（β-FeSi2） as the active region for the first time.The optoelectronic characteristics o...In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide（β-FeSi2） as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.展开更多
We give the first report on the experimental investigation of a p-β-FeSi2/n-4H-SiC heterojunction. A β-/%FeSiE/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputter...We give the first report on the experimental investigation of a p-β-FeSi2/n-4H-SiC heterojunction. A β-/%FeSiE/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing （RTA）. Sharp film-substrate interfaces were confirmed by scanning elec-tron microscopy （SEM）. The current density-voltage and photoresponse characteristics were measured. The measurements showed that the device exhibited good rectifying properties. The photocurrent density was about 1.82 mA/cm^2 at a bias voltage of -1 V under illumination by a 5 mW, 1.31 μm laser, and the dark current density was approximately 0.537 mA/cm^2. The detectivity was estimated to be 8.8×10^9 cmHzl/2/W at 1.31 μm. All of the measurements were made at room temperature. The results suggest that the p-β-FeSiE/n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 60876050 and 51177134)
文摘In this paper,we propose a near-infrared p-type β-FeSi2/n-type 4H-SiC heterojunction photodetector with semiconducting silicide（β-FeSi2） as the active region for the first time.The optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature.The results show that the photodetector has a good rectifying character and a good response to near-infrared light.Interface states should be minimized to obtain a lower reverse leakage current.The response spectrum of the β-FeSi2/4H-SiC detector,which consists of a p-type β-FeSi2 absorption layer with a doping concentration of 1×1015cm-3 and a thickness of 2.5 μm,has a peak of 755 mA/W at 1.42 μm.The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side.The results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.
基金Project supported by the National Natural Science Foundation of China(No.51177134)
文摘We give the first report on the experimental investigation of a p-β-FeSi2/n-4H-SiC heterojunction. A β-/%FeSiE/n-4H-SiC heterojunction near-infrared photodiode was fabricated on 4H-SiC substrate by magnetron sputtering and rapid thermal annealing （RTA）. Sharp film-substrate interfaces were confirmed by scanning elec-tron microscopy （SEM）. The current density-voltage and photoresponse characteristics were measured. The measurements showed that the device exhibited good rectifying properties. The photocurrent density was about 1.82 mA/cm^2 at a bias voltage of -1 V under illumination by a 5 mW, 1.31 μm laser, and the dark current density was approximately 0.537 mA/cm^2. The detectivity was estimated to be 8.8×10^9 cmHzl/2/W at 1.31 μm. All of the measurements were made at room temperature. The results suggest that the p-β-FeSiE/n-4H-SiC heterojunctions can be used as near-infrared photodiodes that are applicable to optically-activated SiC-based devices.
