An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors(HEMTs)is proposed,which considers a dual-field-plate(FP)made up of a gate-FP and a source-FP.The equivalent circui...An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors(HEMTs)is proposed,which considers a dual-field-plate(FP)made up of a gate-FP and a source-FP.The equivalent circuit of the overall model is composed of parasitic elements,intrinsic transistors,gate-FP,and source-FP networks.The equivalent circuit of the gate-FP is identical to that of the intrinsic transistor.In order to simplify the complexity of the model,a series combination of a resistor and a capacitor is employed to represent the source-FP.The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit.The verification is carried out on a 4×250μm GaN HEMT device with a gate-FP and a source-FP in a 0.45μm technology.Compared with the classic model,the proposed novel small-signal model shows closer agreement with measured S-parameters in the range of 1.0 to 18.0 GHz.展开更多
增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型...增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。展开更多
Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of suppliers.Based on previous studies,commercial GaN-based electronics are expected to be ...Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of suppliers.Based on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space.To test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm.The p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive direction.This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices.As such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.展开更多
基金the National Natural Science Foundation of China(62304252)the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS)and IMECAS-HKUST-Joint Laboratory of Microelectronics。
文摘An accurate and novel small-signal equivalent circuit model for GaN high-electron-mobility transistors(HEMTs)is proposed,which considers a dual-field-plate(FP)made up of a gate-FP and a source-FP.The equivalent circuit of the overall model is composed of parasitic elements,intrinsic transistors,gate-FP,and source-FP networks.The equivalent circuit of the gate-FP is identical to that of the intrinsic transistor.In order to simplify the complexity of the model,a series combination of a resistor and a capacitor is employed to represent the source-FP.The analytical extraction procedure of the model parameters is presented based on the proposed equivalent circuit.The verification is carried out on a 4×250μm GaN HEMT device with a gate-FP and a source-FP in a 0.45μm technology.Compared with the classic model,the proposed novel small-signal model shows closer agreement with measured S-parameters in the range of 1.0 to 18.0 GHz.
文摘增强型氮化镓(GaN)基高电子迁移率晶体管(high electron mobility transistor,HEMT)是高频高功率器件与开关器件领域的研究热点,P-GaN栅技术因具备制备工艺简单、可控且工艺重复性好等优势而成为目前最常用且唯一实现商用的GaN基增强型器件制备方法。首先,概述了当前制约P-GaN栅结构GaN基HEMT器件发展的首要问题,从器件结构与器件制备工艺这2个角度,综述了其性能优化举措方面的最新研究进展。然后,通过对研究进展的分析,总结了当前研究工作面临的挑战以及解决方法。最后,对未来的发展前景、发展方向进行了展望。
基金Thisworkwas supported by the National Key R&D Programof China(No.2017YFB0402800,2017YFB0402802).
文摘Commercially available AlGaN/GaN high-electron-mobility transistors(HEMTs)are beginning to enter the public scene froma range of suppliers.Based on previous studies,commercial GaN-based electronics are expected to be tolerant to different types of irradiation in space.To test this assumption,we compared the characteristic electrical curves obtained at different X-ray irradiation doses for GaN HEMT devices manufactured by Infineon and Transphorm.The p-GaN-based device was found to be more robust with a stable threshold voltage,whereas the threshold voltage of the device with ametal-insulator-semiconductor gatewas found to shift first in the negative and then the positive direction.This dynamic phenomenon is caused by the releasing and trapping effects of radiation-induced charges in the dielectric layer and at the interface of irradiated devices.As such,the p-GaNgate-based GaN HEMT provides a promising solution for use as an electric source in space.
