研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着...研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着p-In Ga N层厚度的增加,短路电流下降是导致In Ga N电池效率降低的主要原因。选择较薄的p-In Ga N层有利于提高p-i-n结构In Ga N太阳电池的效率。展开更多
The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region,...The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.展开更多
The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior opt...The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.展开更多
与商用硅基或磷化镓光电二极管相比,In Ga N基可见光光电二极管在窄带通可见光应用领域表现出明显优势。到目前为止,In Ga N/Ga N MQWs为有源层结构和In Ga N体基结构光电二极管都表现出暗电流较大,外量子效率较低,探测带边接近紫外范...与商用硅基或磷化镓光电二极管相比,In Ga N基可见光光电二极管在窄带通可见光应用领域表现出明显优势。到目前为止,In Ga N/Ga N MQWs为有源层结构和In Ga N体基结构光电二极管都表现出暗电流较大,外量子效率较低,探测带边接近紫外范围等缺点。虽然通过器件工艺和结构设计,可以提升器件的性能,但是In Ga N材料外延技术方面的突破才是器件提升性能的根本。展开更多
文摘研究了p-In Ga N层厚度对p-i-n结构In Ga N太阳电池性能的影响。模拟计算发现,随着p-In Ga N层厚度的增加,In Ga N太阳电池效率降低。较差的p-In Ga N欧姆接触特性会破坏In Ga N太阳电池性能。计算结果还表明,无论欧姆接触特性好坏,随着p-In Ga N层厚度的增加,短路电流下降是导致In Ga N电池效率降低的主要原因。选择较薄的p-In Ga N层有利于提高p-i-n结构In Ga N太阳电池的效率。
文摘The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.
基金Project supported by the National Natural Science Foundation of China (Grant No.61176043)the Special Funds for Strategic and Emerging Industries Projects of Guangdong Province,China (Grant Nos.2010A081002005,2011A081301003,and 2012A080304016)
文摘The characteristics of a blue light-emitting diode （LED） with a p-InA1GaN hole injection layer （HIL） is analyzed numerically. The simulation results indicate that the newly designed structure presents superior optical and electrical performance such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-InA1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.
文摘与商用硅基或磷化镓光电二极管相比,In Ga N基可见光光电二极管在窄带通可见光应用领域表现出明显优势。到目前为止,In Ga N/Ga N MQWs为有源层结构和In Ga N体基结构光电二极管都表现出暗电流较大,外量子效率较低,探测带边接近紫外范围等缺点。虽然通过器件工艺和结构设计,可以提升器件的性能,但是In Ga N材料外延技术方面的突破才是器件提升性能的根本。
