The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of si...The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.展开更多
Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture.Here,we deve...Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture.Here,we develop a perovskite electrochemical cell both for light emission and detection,where the active layer consists of a composite material made of halide perovskite microcrystals,polymer support matrix,and added mobile ions.The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition,emitting light at the wavelength of 523 nm,yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 4.3 lm/W.The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40%lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates.Moreover,the device operates as a photodetector with a sensitivity up to 0.75 A/W,specific detectivity of 8.56×1011 Jones,and linear dynamic range of 48 dB.The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50μm.展开更多
In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consi...In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 μm. The electron transport in the Si/Si1-xGex/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (RoA) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.展开更多
Single wall carbon nanotube(SWCNT)/Si heterojunction photodetectors have the advantages of high photoresponse ability and simple structure,however,their detection wavelength range are usually lower than 1100 nm,which ...Single wall carbon nanotube(SWCNT)/Si heterojunction photodetectors have the advantages of high photoresponse ability and simple structure,however,their detection wavelength range are usually lower than 1100 nm,which limits their application in the infrared band.We report a SWCNT/Cu/Si photodetector with both a high photoresponse and a detection range up to the infrared band by depositing a Cu nanoparticles(NPs)layer between a SWCNT film and a n-Si substrate.It was found that the Cu NPs produce strong surface plasmon resonance(SPR)under laser irradiation,which breaks through the limitation of Si band gap and greatly improves the photoresponse of the SWCNT/Cu/Si photodetector in the near infrared band.The responsivity(R)of the photodetector in the wavelength range of 1850–1200 nm reached 2.2–14.15 mA/W,which is the highest value in the reported plasmon enhanced n-Si based photodetectors,and about 20,000 times higher than that of a SWCNT/Si photodetector.Its R value for 1550 nm wavelength used in optical communications reached~8.2 mA/W,which is 64%higher than the previously reported values of commonly used photodetectors.We attribute the significant increase to the strong SPR and low Schottky barrier of Cu with n-Si,which facilitates the generation and transfer of the carriers.展开更多
A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si...A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.展开更多
Silicon photonics integrated with graphene provides a promising solution to realize integrated photodetectors operating at the communication window thanks to graphene’s ultrafast response and compatibility with CMOS ...Silicon photonics integrated with graphene provides a promising solution to realize integrated photodetectors operating at the communication window thanks to graphene’s ultrafast response and compatibility with CMOS fabrication process.However, current hybrid graphene/silicon photodetectors suffer from low responsivity due to the weak light-graphene interaction. Plasmonic structures have been explored to enhance the responsivity, but the intrinsic metallic Ohmic absorption of the plasmonic mode limits its performance. In this work, by combining the silicon slot and the plasmonic slot waveguide, we demonstrate a novel double slot structure supporting high-performance photodetection, taking advantages of both silicon photonics and plasmonics. With the optimized structural parameters, the double slot structure significantly promotes graphene absorption while maintaining low metallic absorption within the double slot waveguide. Based on the double slot structure, the demonstrated photodetector holds a high responsivity of 603.92 m A/W and a large bandwidth of 78 GHz. The high-performance photodetector provides a competitive solution for the silicon photodetector. Moreover,the double slot structure could be beneficial to a broader range of hybrid two-dimensional material/silicon devices to achieve stronger light-matter interaction with lower metallic absorption.展开更多
A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency fabricated with the PERL(the passivated emitter and the rear locally-diffused)technologies is intr...A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency fabricated with the PERL(the passivated emitter and the rear locally-diffused)technologies is introduced in this paper.After making some tiny adjustments of the structure,Silvaco software is used to simulate three similar structures of PIN photodetector by measuring the spectral response,dark current,cut-off frequency and dc characteristics.From the results,it is concluded that PIN photodetector with the middle shallow diffusion area is superior to the other two ones in dark current,at least 35% lower.The responsibility of these three kinds of detector reaches the degree of 0.3A/W,and the highest spectral response is around 600nm.Their cut-off frequencies are all over 108Hz.展开更多
The planar edge termination techniques of junction termination extension （JTE） and offset field plates and fieldlimiting rings for the 4H-SiC P i-N diode were investigated and optimized by using a two-dimensional de...The planar edge termination techniques of junction termination extension （JTE） and offset field plates and fieldlimiting rings for the 4H-SiC P i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 ×10^-5 A/cm2.展开更多
Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measure...Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measures.In this review we fo-cus on hyperdoped silicon(Si)by introducing methods used for the hyperdoping of Si such as ion implantation and laser dop-ing,discussing the electrical and optical properties of hyperdoped bulk Si,Si nanocrystals,Si nanowires and Si films,and present-ing the use of hyperdoped Si for devices like infrared photodetectors and solar cells.The perspectives of the development of hy-perdoped Si are also provided.展开更多
In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results sho...In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.展开更多
文摘The theoretical spectral response formula of the N+-N-I-P+ silicon photodetector with high/low emission junction is given. At the same time, considering the process requirements, the optimum structure parameters of silicon photodetector are obtained by numerical calculation and simulation. Under the condition of these optimum structure parameters, the responsivity of the silicon photodetector will be 0.48 A/W at 650 nm.
基金M.Baeva,A.Vorobyov,V.Neplokh acknowledge the Russian Science Foundation No.22-79-10286(https://rscf.ru/project/22-79-10286/)for supporting silicon substrate processing.D.Gets,APolushkin and S.Makarov acknowledge the Ministry of Science and Higher Education of the Russian Federation(Project 075-15-2021-589)for supporting perovskite synthesisA.G.Nasibulin and D.V.Krasnikov acknowledge the Russian Science Foundation(grant No.20-73-10256)for supporting synthesis of SWCNTs.
文摘Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture.Here,we develop a perovskite electrochemical cell both for light emission and detection,where the active layer consists of a composite material made of halide perovskite microcrystals,polymer support matrix,and added mobile ions.The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition,emitting light at the wavelength of 523 nm,yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 4.3 lm/W.The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40%lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates.Moreover,the device operates as a photodetector with a sensitivity up to 0.75 A/W,specific detectivity of 8.56×1011 Jones,and linear dynamic range of 48 dB.The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50μm.
文摘In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 μm. The electron transport in the Si/Si1-xGex/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (RoA) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.
基金supported by the Ministry of Science and Technology of China(No.2022YFA1203303)the National Natural Science Foundation of China(Nos.52072375,52130209,and 52188101)+1 种基金Liaoning Revitalization Talents Program(No.XLYC2002037)the Basic Research Project of Natural Science Foundation of Shandong Province(No.ZR2019ZD49).
文摘Single wall carbon nanotube(SWCNT)/Si heterojunction photodetectors have the advantages of high photoresponse ability and simple structure,however,their detection wavelength range are usually lower than 1100 nm,which limits their application in the infrared band.We report a SWCNT/Cu/Si photodetector with both a high photoresponse and a detection range up to the infrared band by depositing a Cu nanoparticles(NPs)layer between a SWCNT film and a n-Si substrate.It was found that the Cu NPs produce strong surface plasmon resonance(SPR)under laser irradiation,which breaks through the limitation of Si band gap and greatly improves the photoresponse of the SWCNT/Cu/Si photodetector in the near infrared band.The responsivity(R)of the photodetector in the wavelength range of 1850–1200 nm reached 2.2–14.15 mA/W,which is the highest value in the reported plasmon enhanced n-Si based photodetectors,and about 20,000 times higher than that of a SWCNT/Si photodetector.Its R value for 1550 nm wavelength used in optical communications reached~8.2 mA/W,which is 64%higher than the previously reported values of commonly used photodetectors.We attribute the significant increase to the strong SPR and low Schottky barrier of Cu with n-Si,which facilitates the generation and transfer of the carriers.
文摘A silicon on reflector (SOR) substrate containing a thin crystal silicon layer and a buried Si/SiO 2 Bragg reflector is reported. The substrate, which is applied to optoelectronic devices, is fabricated by using Si based sol gel sticking and smart cut techniques. The reflectivity of the SOR substrate is close to unity at 1 3μm's wavelength under the normal incidence.
基金supports from Innovative Solutions for Next Generation Communications Infrastructure(INCOM project,sponsored by Innovation Fund Denmark)The Center for Silicon Photonics for Optical Communication(SPOC,DNRF123)+3 种基金QUANPIC project sponsored by VILLUM FONDEN(No.00025298)Mid-chip project sponsored by VILLUM FONDEN(No.13367)Independent Research Fund Denmark(No.9041-00333B)Starting Research Fund from the Huazhong University of Science and Technology(No.3004182179)。
文摘Silicon photonics integrated with graphene provides a promising solution to realize integrated photodetectors operating at the communication window thanks to graphene’s ultrafast response and compatibility with CMOS fabrication process.However, current hybrid graphene/silicon photodetectors suffer from low responsivity due to the weak light-graphene interaction. Plasmonic structures have been explored to enhance the responsivity, but the intrinsic metallic Ohmic absorption of the plasmonic mode limits its performance. In this work, by combining the silicon slot and the plasmonic slot waveguide, we demonstrate a novel double slot structure supporting high-performance photodetection, taking advantages of both silicon photonics and plasmonics. With the optimized structural parameters, the double slot structure significantly promotes graphene absorption while maintaining low metallic absorption within the double slot waveguide. Based on the double slot structure, the demonstrated photodetector holds a high responsivity of 603.92 m A/W and a large bandwidth of 78 GHz. The high-performance photodetector provides a competitive solution for the silicon photodetector. Moreover,the double slot structure could be beneficial to a broader range of hybrid two-dimensional material/silicon devices to achieve stronger light-matter interaction with lower metallic absorption.
文摘A silicon-based PIN photodetector structure with the characteristics of high responsibility and high cut-off frequency fabricated with the PERL(the passivated emitter and the rear locally-diffused)technologies is introduced in this paper.After making some tiny adjustments of the structure,Silvaco software is used to simulate three similar structures of PIN photodetector by measuring the spectral response,dark current,cut-off frequency and dc characteristics.From the results,it is concluded that PIN photodetector with the middle shallow diffusion area is superior to the other two ones in dark current,at least 35% lower.The responsibility of these three kinds of detector reaches the degree of 0.3A/W,and the highest spectral response is around 600nm.Their cut-off frequencies are all over 108Hz.
基金Project supported by the Science and Technology Foundation of Hunan Province of China (Grant No. 2008FJ3102)
文摘The planar edge termination techniques of junction termination extension （JTE） and offset field plates and fieldlimiting rings for the 4H-SiC P i-N diode were investigated and optimized by using a two-dimensional device simulator ISE-TCAD10.0. By experimental verification, a good consistency between simulation and experiment can be observed. The results show that the reverse breakdown voltage for the 4H-SiC P-i-N diode with optimized JTE edge termination can accomplish near ideal breakdown voltage and much lower leakage current. The breakdown voltage can be near 1650 V, which achieves more than 90 percent of ideal parallel plane junction breakdown voltage and the leakage current density can be near 3 ×10^-5 A/cm2.
基金supported by the National Key Research and Development Program of China (Grant Nos. 2017YFA0205704 and 2018YFB2200101)the Natural Science Foundation of China (Grant Nos. 91964107 and U20A20209)provided by the Natural Science Foundation of China for Innovative Research Groups (Grant No. 61721005)
文摘Hyperdoping that introduces impurities with concentrations exceeding their equilibrium solubility has been attract-ing great interest since the tuning of semiconductor properties increasingly relies on extreme measures.In this review we fo-cus on hyperdoped silicon(Si)by introducing methods used for the hyperdoping of Si such as ion implantation and laser dop-ing,discussing the electrical and optical properties of hyperdoped bulk Si,Si nanocrystals,Si nanowires and Si films,and present-ing the use of hyperdoped Si for devices like infrared photodetectors and solar cells.The perspectives of the development of hy-perdoped Si are also provided.
文摘In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.
