Selective capture of Tl2O from flue gas with formation of p-n junction on V_(2)O_(5)-WO_(3)/TiO_(2)catalyst under working conditions

Thallium(Tl)compounds,highly toxic to biology,are usually released into flue gas during fossil/minerals combustion,and further distributed in water and soil.In this work,we fundamentally investigated the capture of gaseous Tl_(2)O by industrial V2O5-WO3/TiO_(2)catalyst under working condition in Tl-containing flue gas.Experimental and theoretical results indicated that the Tl_(2)O has significant electron-feeding capacity and easily donate electron to unoccupied orbitals of TiO_(2),leading to dismutation of Ti 2p and inartificial formation of p-n junction on TiO_(2)surface,which prompted Tl_(2)O selectively interacted with TiO_(2)in flue gas.Herein,we proposed and verified an effective way to capture gaseous Tl_(2)O,which offered almost the best choice to eliminate Tl emission from flue gas and expanded the function of the TiO_(2)-based catalyst.The formation of p-n junction on commercial V2O5-WO3/TiO_(2)catalyst under working condition was revealed for the first time,which can be a valuable reference for both heterocatalysis and electro/photocatalysis.

Two Steps B Ion-Implantation of Diamond Film Grown on an n-Type Si Substrate and Its p-n Junction Effects

Polycrystalline diamond thin films are deposited on an n-type Si substrates by hot filament chemical vapor deposition,and then are implanted with boron ions in a 200keV ion implanter.In order to achieve a better distribution of the implanted element,boron ions are implanted by two steps:implanting boron ions with the energy of 70keV first,and then with the energy of 100keV.The homogeneous distribution of the B ion is gained.The current-voltage characteristics of the samples are studied.It is found that the p-n heterojunction effect is achieved in these samples.

Using 3D TCAD Simulation to Study Charge Collection of a p-n Junction in a 0.18μm Bulk Process

Single event transient of a real p-n junction in a 0.18μm bulk process is studied by 3D TCAD simulation. The impact of voltage, temperature, substrate concentration, and LET on SET is studied. Our simulation results demonstrate that biases in the range 1.62 to 1.98V influence DSET current shape greatly and total collected charge weakly. Peak current and charge collection within 2ns decreases as temperature increases,and temperature has a stronger influence on SET currents than on total charge. Typical variation of substrate concentration in modern VDSM processes has a negligible effect on SEEs. Both peak current and total collection charge increases as LET increases.

Visualizing light-to-electricity conversion process in InGaN/GaN multi-quantum wells with a p-n junction

Absorption and carrier transport behavior plays an important role in the light-to-electricity conversion process, which is difficult to characterize. Here we develop a method to visualize such a conversion process in the InGaN/GaN multiquantum wells embedded in a p-n junction. Under non-resonant absorption conditions, a photocurrent was generated and the photoluminescence intensity decayed by more than 70% when the p-n junction out-circuit was switched from open to short. However, when the excitation photon energy decreased to the resonant absorption edge, the photocurrent dropped drastically and the photoluminescence under open and short circuit conditions showed similar intensity. These results indicate that the escaping of the photo-generated carriers from the quantum wells is closely related to the excitation photon energy.

Thin Film of Perovskite Oxide with Atomic Scale p-n Junctions

Thin films of perovskite manganese oxide Lao.66Ca0.29K0.05MnO3（LCKMO） on Au/ITO（ITO=indium tin oxide） substrates were prepared by off-axis radio frequency magnetron sputtering and characterized by X-ray diffrac- tion（XRD）, high-resolution transmission electron microscopy（HRTEM）, and conductive atomic force microscopy （C-AFM） at room temperature. The thin films with thickness ranged from 100 nm to 300 nm basically show cubic structures with a=0.3886 nm, the same as that of the raw material used, but the structures are highly modulated. C-AFM results revealed that the atomic scale p-n junction feature of the thin films was the same as that of the single crystals. The preparation of the thin films thus further confirms the possibility of their application extending from micrometer-sized single crystals to macroscopic thin film.

Dependences of spin polarization on the control parameters in the spin-polarized injection through the magnetic p-n junction

Effective spin-polarized injection from magnetic semiconductor （MS） to nonmagnetic semiconductor （NMS） has been highlighted in recent years. In this paper we study theoretically the dependence of nonequilibrium spin polarization （NESP） in NMS during spin-polarized injection through the magnetic p-n junction. Based on the theory in semiconductor physics, a model is established and the boundary conditions are determined in the case of no external spin-polarized injection and low bias. The control parameters that may influence the NESP in NMS are indicated by calculating the distribution of spin polarization. They are the doping concentrations, the equilibrium spin polarization in MS and the bias. The effective spin-polarized injection can be realized more easily by optimizing the above parameters.

Study on Porous Silicon with P-N Junction Sensor for Humidity Measurement

Porous materials used for humidity sensing have been commercialized.In this paper,the preparation and humidity sensing characteristics of porous silicon with P-N junctions (PNJPS)are studied.PNJPS is made by electro-chemical anodic etched method from silicon wafers with P-N junctions.Its porous structure is verified by scanning electronic micrograph. Experiments also show that PNJPS has high sensitivity,short response time (less than 30 seconds),and long-term stability.

Analyses and Simulation of V-I Characteristics for Solar Cells Based on P-N Junction

Through theoretical analyses of the Shockley equation and the difference between a practical P-N junction and its ideal model, the mathematical models of P-N junction and solar cells had been obtained. With Matlab software, the V-I characteristics of diodes and solar cells were simulated, and a computer simulation model of the solar cells based on P-N junction was also established. Based on the simulation model, the influences of solar cell’s internal resistances on open-circuit voltage and short-circuit current under certain illumination were numerically analyzed and solved. The simulation results showed that the equivalent series resistance and shunt resistance could strongly affect the V-I characteristics of solar cell, but their influence styles were different.

Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

The state of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on the junction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about a theoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cell under an integration of the external electrical field source. An external electrical source is integrated in a solar cell system. The electronic carriers charge generated in the solar cell crossed mainly the junction with the great strength external electrical field. In open circuit, this crossing of the electronic charge carriers causes the thermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and the photo-voltage for different external electrical fields. The electric field causes the decrease of the photo-voltage mainly the open-circuit photo-voltage. The decrease of the photo-voltage translates the narrowing of the Space Charge Region (SCR). The average value of the external electric field used in this study is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the external electrical field production source. The increase of the electrical field causes rather the narrowing of the SCR. That can provide an improvement of the solar cell’s electrical outputs.

Facile Semiconductor p-n Homojunction Nanowires with Strategic p-Type Doping Engineering Combined with Surface Reconstruction for Biosensing Applications

Photosensors with versatile functionalities have emerged as a cornerstone for breakthroughs in the future optoelectronic systems across a wide range of applications.In particular,emerging photoelectrochemical(PEC)-type devices have recently attracted extensive interest in liquid-based biosensing applications due to their natural electrolyte-assisted operating characteristics.Herein,a PEC-type photosensor was carefully designed and constructed by employing gallium nitride(GaN)p-n homojunction semiconductor nanowires on silicon,with the p-GaN segment strategically doped and then decorated with cobalt-nickel oxide(CoNiO_(x)).Essentially,the p-n homojunction configuration with facile p-doping engineering improves carrier separation efficiency and facilitates carrier transfer to the nanowire surface,while CoNiO_(x)decoration further boosts PEC reaction activity and carrier dynamics at the nanowire/electrolyte interface.Consequently,the constructed photosensor achieves a high responsivity of 247.8 mA W^(-1)while simultaneously exhibiting excellent operating stability.Strikingly,based on the remarkable stability and high responsivity of the device,a glucose sensing system was established with a demonstration of glucose level determination in real human serum.This work offers a feasible and universal approach in the pursuit of high-performance bio-related sensing applications via a rational design of PEC devices in the form of nanostructured architecture with strategic doping engineering.

TiO_(2)Electron Transport Layer with p-n Homojunctions for Efficient and Stable Perovskite Solar Cells

Low-temperature processed electron transport layer(ETL)of TiO_(2)that is widely used in planar perovskite solar cells(PSCs)has inherent low carrier mobility,resulting in insufficient photogenerated elec-tron transport and thus recombination loss at buried interface.Herein,we demonstrate an effective strategy of laser embedding of p-n homojunctions in the TiO_(2)ETL to accelerate electron transport in PSCs,through localized build-in electric fields that enables boosted electron mobility by two orders of magnitude.Such embedding is found significantly helpful for not only the enhanced crystallization quality of TiO_(2)ETL,but the fabrication of perovskite films with larger-grain and the less-trap-states.The embedded p-n homojunction enables also the modulation of interfacial energy level between perovskite layers and ETLs,favoring for the reduced voltage deficit of PSCs.Benefiting from these merits,the formamidinium lead iodide(FAPbI_(3))PSCs employing such ETLs deliver a champion efficiency of 25.50%,along with much-improved device stability under harsh conditions,i.e.,maintain over 95%of their initial efficiency after operation at maximum power point under continuous heat and illumination for 500 h,as well as mixed-cation PSCs with a champion efficiency of 22.02%and over 3000 h of ambient storage under humidity stability of 40%.Present study offers new possibilities of regulating charge transport layers via p-n homojunction embedding for high performance optoelectronics.

Electronic properties of 2D materials and their junctions

With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.

基于p-n异质结CuO/TiO_(2)复合物高效的载流子分离能力构建超灵敏AFP光电化学分析

将TiO_(2)纳米粒子与Cu(pta)MOFs复合,通过高温煅烧策略制得CuO/TiO_(2)复合物.在最优实验条件下,基于复合物对可见光更强的吸收利用效率,CuO/TiO_(2)修饰的ITO电极展现出显著的光电化学(PEC)响应信号,其光电流值(59.4μA)分别是单组分TiO_(2)和CuO粒子的15.5和7.4倍.线性扫描伏安法(LSV)测试结果证实CuO/TiO_(2)/ITO电极比CuO和TiO_(2)材料具有更大的LSV响应强度.这可归因于获得的薄片层状CuO粒子及其兼有的多孔隙特征促进了光的多重散射/反射效应,同时CuO/TiO_(2)复合材料具有的典型p-n异质结构(能级带隙匹配)大幅促进了光生电荷载流子(e^(-)/h^(+))的分离与转移.选用戊二醛(GA)作为交联手臂分子,通过温和的醛胺反应将壳聚糖(CS)和anti-AFP抗体组装于CuO/TiO_(2)/ITO电极表面,再用牛血清蛋白(BSA)封闭活性位点,构建出PEC传感平台(BSA/anti-AFP/GA-CS/CuO/TiO_(2)/ITO),实现了对不同浓度甲胎蛋白(AFP)的高灵敏检测(检出限达到2.63×10^(-4) ng/mL).制备的传感电极同时展示出良好的稳定性和选择性.

铁电效应调控的高性能p-NiO/i-BaTiO_(3)/n-ITO自供能紫外光电探测器

近年来,自供能的紫外光电探测器由于无需任何外部偏压即可工作而成为军事和民用领域的研究热点。其中,钛酸钡(BTO)作为一种宽禁带铁电材料,拥有良好的铁电、压电和热电性能,可以产生本征自发极化场来分离光生载流子,从而实现自供能紫外光电探测。到目前为止,基于BTO的自供能光电探测器已经取得了巨大进展,然而,除了使用高质量的单晶材料外,所报道的器件往往表现出低响应度(10^(-8)~10^(-7) A·W^(-1))。本文利用低成本的射频溅射技术,制造了一种高性能的NiO/BTO/ITO p-i-n异质结构自供能紫外光电探测器。通过将BTO的铁电去极化场和p-i-n结的内建电场耦合,能有效提高光生载流子的分离和迁移。因此,该器件在正极化态下255 nm波长紫外光照射下的响应度可以达到3.4×10^(-5) A·W^(-1),远远高于其他已报道的基于非晶态和陶瓷BTO制备的紫外光电探测器。此外,该器件具有0.3 s/0.4 s的快速响应时间。本工作为提高BTO光电探测器的性能提供了一种新的策略。

Electron-distribution control via Pt/NC and MoC/NC dual junction:Boosted hydrogen electro-oxidation and theoretical study

The scarcity,high cost and susceptibility to CO of Platinum severely restrict its application in alkaline hydrogen oxidation reaction(HOR).Hybridizing Pt with other transition metals provides an effective strategy to modulate its catalytic HOR performance,but at the cost of mass activity due to the coverage of modifiers on Pt surface.Herein,we constructed dual junctions'Pt/nitrogen-doped carbon(Pt/NC)andδ-MoC/NC to modify electronic structure of Pt via interfacial electron transfer to acquire Pt-MoC@NC catalyst with electron-deficient Pt nanoparticles,simultaneously endowing it with high mass activity and durability of alkaline HOR.Moreover,the unique structure of Pt-MoC@NC endows Pt with a high COtolerance at 1,000 ppm CO/H_(2),a quality that commercial Pt-C catalyst lacks.The theoretical calculations not only confirm the diffusion of electrons from Pt/NC to Mo C/NC could occur,but also demonstrate the negative shift of Pt d-band center for the optimized binding energies of*H,*OH and CO.

Responses of growth performance,antioxidant function,small intestinal morphology and mRNA expression of jejunal tight junction protein to dietary iron in yellow-feathered broilers

This study aimed to investigate the dose-effect of iron on growth performance,antioxidant function.intestinal morphology,and mRNA expression of jejunal tight junction protein in 1-to21-d-old yellow-feathered broilers.A total of 7201-d-old yellow-feathered maleb roilers were allocated to 9 treatments with 8 replicate cages of 10 birds per cage.The dietary treatments were consisted of a basal diet(contained 79.6 mg Fe kg^(-1))supplemented with 0,20,40,60,80,160,320,640,and 1,280 mg Fe kg^(-1)in the form of FeSO_(4)·7H_(2)O.Compared with the birds in the control group,birds supplemented with 20mg Fe kg^(-1)had higher average daily gain(ADG)(P<0.0001).Adding 640 and 1,280 mg Fe kg^(-1)significantly decreased ADG(P<0.0001)and average daily feed intake(ADFI)(P<0.0001)compared with supplementation of 20mg Fe kg^(-1).Malondialdehyde(MDA)concentration in plasma and duodenum increased linearly(P<0.0001),but MDA concentration in liver and jejunum increased linearly(P<0.05)or quadratically(P<0.05)with increased dietary Fe concentration.The villus height(VH)in duodenum and jejunum,and the ratio of villus height to crypt depth(V/C)in duodenum decreased linearly(P?0.05)as dietary Feincreased.As dietary Fe increased,the jejunal relative mRNA abundance of claudin-1 decreased linearly(P=0.001),but the jejunal relative mRNA abundance of zona occludens-1(ZO-1)and occludin decreased linearly(P?0.05)or quadratically(P?0.05).Compared with the supplementation of 20 mg Fe kg^(-1),the supplementation of640 mg Fe kg^(-1)or higher increased(P?0.05)MDA concentrations in plasma,duodenum,and jejunum,decreased VH in the duodenum and jejunum,and the addition of 1,280 mg Fe kg^(-1)reduced(P?0.05)the jejunal tight junction protein(claudin-1,ZO-1,occludin)mRNA abundance.In summary,640 mg of supplemental Fe kg^(-1)or greater was associated with decreased growth performance,increased oxidative stress,disrupted intestinal morphology,and reduced mRNA expression of jejunal tight junction protein.

Early adenocarcinoma mixed with a neuroendocrine carcinoma component arising in the gastroesophageal junction: A case report

BACKGROUND Early adenocarcinoma mixed with a neuroendocrine carcinoma(NEC)component arising in the gastroesophageal junctional(GEJ)region is rare and even rarer in young patients.Here,we report such a case in a 29-year-old Chinese man.CASE SUMMARY This patient presented to our hospital with a 3-mo history of dysphagia and regurgitation.Upper endoscopy revealed an elevated nodule in the distal esophagus 1.6 cm above the GEJ line,without Barrett’s esophagus or involvement of the gastric cardia.The nodule was completely resected by endoscopic submu-cosal dissection(ESD).Pathological examination confirmed diagnosis of intra-mucosal adenocarcinoma mixed with an NEC component,measuring 1.5 cm.Immunohistochemically,both adenocarcinoma and NEC components were positive for P53 with a Ki67 index of 90%;NEC was positive for synaptophysin and chromogranin.Next-generation sequencing of 196 genes demonstrated a novel germline mutation of the ERCC3 gene in the DNA repair pathway and a germline mutation of the RNF43 gene,a common gastric cancer driver gene,in addition to pathogenic somatic mutations in P53 and CHEK2 genes.The patient was alive without evidence of the disease 36 mo after ESD.CONCLUSION Early adenocarcinoma with an NEC component arising in the distal esophageal side of the GEJ region showed evidence of gastric origin.

Co-doped BaFe_(2)As_(2) Josephson junction fabricated with a focused helium ion beam

Josephson junction plays a key role not only in studying the basic physics of unconventional iron-based superconductors but also in realizing practical application of thin-film based devices,therefore the preparation of high-quality iron pnictide Josephson junctions is of great importance.In this work,we have successfully fabricated Josephson junctions from Co-doped BaFe_(2)As_(2)thin films using a direct junction fabrication technique which utilizes high energy focused helium ion beam(FHIB).The electrical transport properties were investigated for junctions fabricated with various He^(+)irradiation doses.The junctions show sharp superconducting transition around 24 K with a narrow transition width of 2.5 K,and a dose correlated foot-structure resistance which corresponds to the effective tuning of junction properties by He^(+)irradiation.Significant J_c suppression by more than two orders of magnitude can be achieved by increasing the He^(+)irradiation dose,which is advantageous for the realization of low noise ion pnictide thin film devices.Clear Shapiro steps are observed under 10 GHz microwave irradiation.The above results demonstrate the successful fabrication of high quality and controllable Co-doped BaFe_(2)As_(2)Josephson junction with high reproducibility using the FHIB technique,laying the foundation for future investigating the mechanism of iron-based superconductors,and also the further implementation in various superconducting electronic devices.

Computed tomography-based nomogram of Siewert type Ⅱ/Ⅲ adenocarcinoma of esophagogastric junction to predict response to docetaxel, oxaliplatin and S-1

BACKGROUND Neoadjuvant chemotherapy(NAC)has become the standard care for advanced adenocarcinoma of esophagogastric junction(AEG),although a part of the patients cannot benefit from NAC.There are no models based on baseline computed tomography(CT)to predict response of Siewert type II or III AEG to NAC with docetaxel,oxaliplatin and S-1(DOS).AIM To develop a CT-based nomogram to predict response of Siewert type II/III AEG to NAC with DOS.METHODS One hundred and twenty-eight consecutive patients with confirmed Siewert type II/III AEG underwent CT before and after three cycles of NAC with DOS,and were randomly and consecutively assigned to the training cohort(TC)(n=94)and the validation cohort(VC)(n=34).Therapeutic effect was assessed by disease-control rate and progressive disease according to the Response Evaluation Criteria in Solid Tumors(version 1.1)criteria.Possible prognostic factors associated with responses after DOS treatment including Siewert classification,gross tumor volume(GTV),and cT and cN stages were evaluated using pretherapeutic CT data in addition to sex and age.Univariate and multivariate analyses of CT and clinical features in the TC were performed to determine independent factors associated with response to DOS.A nomogram was established based on independent factors to predict the response.The predictive performance of the nomogram was evaluated by Concordance index(C-index),calibration and receiver operating characteristics curve in the TC and VC.RESULTS Univariate analysis showed that Siewert type(52/55 vs 29/39,P=0.005),pretherapeutic cT stage(57/62 vs 24/32,P=0.028),GTV(47.3±27.4 vs 73.2±54.3,P=0.040)were significantly associated with response to DOS in the TC.Multivariate analysis of the TC also showed that the pretherapeutic cT stage,GTV and Siewert type were independent predictive factors related to response to DOS(odds ratio=4.631,1.027 and 7.639,respectively;all P<0.05).The nomogram developed with these independent factors showed an excellent performance to predict response to DOS in the TC and VC(C-index:0.838 and 0.824),with area under the receiver operating characteristic curve of 0.838 and 0.824,respectively.The calibration curves showed that the practical and predicted response to DOS effectively coincided.CONCLUSION A novel nomogram developed with pretherapeutic cT stage,GTV and Siewert type predicted the response of Siewert type II/III AEG to NAC with DOS.

A p-n WO_(3)/SnSe_(2) Heterojunction for Efficient Photo-assisted Electrocatalysis of the Oxygen Evolution Reaction

Water splitting is important to the conversion and storage of renewable energy,but slow kinetics of the oxygen evolution reaction(OER)greatly limits its utility.Here,under visible light illumination,the p-n WO_(3)/SnSe_(2)(WS)heterojunction significantly activates OER catalysis of CoFe-layered double hydroxide(CF)/carbon nanotubes(CNTs).Specifically,the catalyst achieves an overpotential of 224 mV at 10 mA cm^(-2)and a small Tafel slope of 47 mV dec^(-1),superior to RuO_(2)and most previously reported transition metal-based OER catalysts.The p-n WS heterojunction shows strong light absorption to produce photogenerated carriers.The photogenerated holes are trapped by CF to suppresses the charge recombination and facilitate charge transfer,which accelerates OER kinetics and boost the activity for the OER.This work highlights the possibility of using heterojunctions to activate OER catalysis and advances the design of energy-efficient catalysts for water oxidation systems using solar energy.