It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light g...It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.展开更多
It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the conc...It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.展开更多
For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, a...For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.展开更多
This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze ...This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze the current-voltage characteristics of p-n-junction in which three-dimensional space (I,U,e) gives more complete information than the two-dimensional.展开更多
Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are...Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.展开更多
Building the foundations of Thermo-Photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and Photo-Electronics.It is these errors th...Building the foundations of Thermo-Photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and Photo-Electronics.It is these errors that determined the output of the asymptotics of the operating parameters of semiconductor electronic devices,in particular,both the saturation of the limiting clock frequency of processors,and the saturation of the efficiency of both thermoelectric and photoelectric converters.But in semiconductors,although these thermodynamic errors manifested themselves not only in the instrumental,but also in the technological aspect,they could not prohibit semiconductor Electronics itself,unlike Electronics based on other materials.It’s just that a number of qualitative mistakes were made in the theory of semiconductor devices and photo devices.In this work,it is shown that the energy band diagram of semiconductor contacts itself was constructed with a significant omission-without taking into account the temperature force on the contact.At the same time,because of the incorrect calculation of currents according to the outdated formulas of Richardson-Langmuir-Deshman,there were also PROHIBITIONS.So the practitioners compensated for the errors of the theory with“empirical corrections”.So electronics engineers often made devices not according to a strict theory(which simply did not exist until now),but on a hunch and according to empirical local laws.And only the correction of the historical mistakes made it possible to expand the phenomenology of the description of processes in a Solid Body,on the basis of which it is possible to make calculations of highly efficient elements of Photo-Thermo-Electronics.展开更多
文摘It is shown that the increase in the current of an asymmetric p-n-junction, caused by perturbation of potential barrier height and increasing recombination current in a strong microwave field, is suppressed by light generated photo carriers, leading to the displacement of current-voltage characteristics of p-n-junction into the direction of smaller current values.
文摘It is shown that the nonideality coefficient m actually depends on the electron temperature Te, and the hole temperature Th. We get more general expression for the nonideality coefficient, taking into account the concentration of electrons and holes, as well as their temperature, coefficient and diffusion length, the temperature of the phonons, the applied voltage, and the height of the potential barrier.
文摘For the first time the effect of light on the CVC of strained p-n-junction in a strong microwave field is examined. It is shown that the deformation and the microwave field increase the current through p-n-junction, and the light decreases it. The mechanism of this phenomenon is explained by the fact that under heating of the charge carriers by microwave field the recombination current arises, and under the action of light the generation current arises which are directed oppositely. And under the influence of the deformation the band gap of the semiconductor will be changed.
文摘This paper investigates the current-voltage characteristics (CVC) strain of p-n-junction in a strong microwave (MW) field and shows that the deformation increases the current generated in the p-n-junction. We analyze the current-voltage characteristics of p-n-junction in which three-dimensional space (I,U,e) gives more complete information than the two-dimensional.
文摘Results of experimental investigation of detection (rectification) of high power X-band microwave signal in diodes of various design (semiconductor p-n-junction, point-contact, Schottky, Metal-Isolator-Metal—MIM) are reported. The maximum of the detected direct voltage V vs. power P of microwave signal and subsequent polarity reversal, previously found in MIM diodes in the optical and microwave bands, have found to be characteristic of all investigated diodes as well. After the reversal of polarity, this dependence comes linear, and the sign of the voltage corresponds to thermoEMF. In some diodes, the hysteresis on V(P) was observed. All 5 types of V(P) of MIM diodes (have made from different pairs of metals), reported earlier, were reproduced on same p-n-junction diode by variable external DC bias. These results joined with abnormal frequency cutoff forced to suggest that there is an unknown mechanism for direct flow of charge carriers (and for generate direct current) in the high-frequency electrical field, which differs from the conventional rectification.
文摘Building the foundations of Thermo-Photo-Electronics became possible only after the correction of thermodynamic errors in the traditional theory of semiconductor Electronics and Photo-Electronics.It is these errors that determined the output of the asymptotics of the operating parameters of semiconductor electronic devices,in particular,both the saturation of the limiting clock frequency of processors,and the saturation of the efficiency of both thermoelectric and photoelectric converters.But in semiconductors,although these thermodynamic errors manifested themselves not only in the instrumental,but also in the technological aspect,they could not prohibit semiconductor Electronics itself,unlike Electronics based on other materials.It’s just that a number of qualitative mistakes were made in the theory of semiconductor devices and photo devices.In this work,it is shown that the energy band diagram of semiconductor contacts itself was constructed with a significant omission-without taking into account the temperature force on the contact.At the same time,because of the incorrect calculation of currents according to the outdated formulas of Richardson-Langmuir-Deshman,there were also PROHIBITIONS.So the practitioners compensated for the errors of the theory with“empirical corrections”.So electronics engineers often made devices not according to a strict theory(which simply did not exist until now),but on a hunch and according to empirical local laws.And only the correction of the historical mistakes made it possible to expand the phenomenology of the description of processes in a Solid Body,on the basis of which it is possible to make calculations of highly efficient elements of Photo-Thermo-Electronics.
