This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold v...This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold voltage(VTH)of−3.8 V,a maximum ON-state current(ION)of 1.12 mA/mm,and an impressive ION/IOFF ratio of 10^(7).To achieve these remarkable results,an H plasma treatment was strategically applied to the gated p-GaN region,where a relatively thick GaN layer(i.e.,70 nm)was kept intact without aggressive gate recess.Through this treatment,the top portion of the GaN layer was converted to be hole-free,leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gateoxide/GaN interface.This approach allows for E-mode operation while retaining high-quality p-channel characteristics.展开更多
基金supported by the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321)the National Natural Science Foundation of China(Grant No.92163204).
文摘This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold voltage(VTH)of−3.8 V,a maximum ON-state current(ION)of 1.12 mA/mm,and an impressive ION/IOFF ratio of 10^(7).To achieve these remarkable results,an H plasma treatment was strategically applied to the gated p-GaN region,where a relatively thick GaN layer(i.e.,70 nm)was kept intact without aggressive gate recess.Through this treatment,the top portion of the GaN layer was converted to be hole-free,leaving only the bottom portion p-type and spatially separated from the etched GaN surface and gateoxide/GaN interface.This approach allows for E-mode operation while retaining high-quality p-channel characteristics.
