Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the ...Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the temperature (T) range of [274.5 K - 366.5 K]. Those parameters include the reverse saturation current (I<sub>s</sub>), the ideality factor (n), the series and the shunt resistances (R<sub>s</sub> and R<sub>sh</sub>), the effective and the zero bias barrier heights (Φ<sub>B</sub> and Φ<sub>B0</sub>), the product of the electrical active area (A) and the effective Richardson constant (A**), the built-in potential (V<sub>bi</sub>), together with the semiconductor doping concentration (N<sub>A</sub> or N<sub>D</sub>). Some of them have been extracted by using two or three different methods. The main features of each approach have been clearly stated. From one parameter to another, results have been discussed in terms of structure performance, comparison on one another when extracted from different methods, accordance or discordance with data from other works, and parameter’s temperature or voltage dependence. A comparison of results on Φ<sub>B</sub>, ΦB0</sub>, n and N<sub>A</sub> or N<sub>D</sub> parameters with some available data in literature for the same parameters, has especially led to clear propositions on the identity of the analyzed SBD’s metal and semiconductor-type.展开更多
文摘Several parameters of a commercial Si-based Schottky barrier diode (SBD) with unknown metal material and semiconductor-type have been investigated in this work from dark forward and reverse I-V characteristics in the temperature (T) range of [274.5 K - 366.5 K]. Those parameters include the reverse saturation current (I<sub>s</sub>), the ideality factor (n), the series and the shunt resistances (R<sub>s</sub> and R<sub>sh</sub>), the effective and the zero bias barrier heights (Φ<sub>B</sub> and Φ<sub>B0</sub>), the product of the electrical active area (A) and the effective Richardson constant (A**), the built-in potential (V<sub>bi</sub>), together with the semiconductor doping concentration (N<sub>A</sub> or N<sub>D</sub>). Some of them have been extracted by using two or three different methods. The main features of each approach have been clearly stated. From one parameter to another, results have been discussed in terms of structure performance, comparison on one another when extracted from different methods, accordance or discordance with data from other works, and parameter’s temperature or voltage dependence. A comparison of results on Φ<sub>B</sub>, ΦB0</sub>, n and N<sub>A</sub> or N<sub>D</sub> parameters with some available data in literature for the same parameters, has especially led to clear propositions on the identity of the analyzed SBD’s metal and semiconductor-type.
