For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive ...For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.展开更多
The high frequency resistance and inductance of the 3-D complex interconnect structures can be calculated by solving an eddy current electromagnetic problem. In this paper, a model for charactering such a 3-D eddy cur...The high frequency resistance and inductance of the 3-D complex interconnect structures can be calculated by solving an eddy current electromagnetic problem. In this paper, a model for charactering such a 3-D eddy current problem is proposed, in which the electromagnetic fields in both the conducting and non-conducting regions are described in terms of the magnetic vector potential, and a set of the indirect boundary integral equations (IBIE) is obtained. The IBIEs can be solved by boundary element method, so this method avoids discretizing the domain of the conductors. As an indirect boundary element method, it is of minimum order. It does not restrict the direction of the current in conductors, and hence it can consider the mutual impedance between two perpendicular conductors. The numerical results can well meet the analytical solution of a 2-D problem. The mutual impedance of two perpendicular conductors is also shown under the different gaps between conductors and different frequencies.展开更多
The busbars in high power neutral point clamped three-level inverters are modeled using the Maxwell Q3D Extractor software, which is based on the partial element equivalent circuits method. The equivalent circuits of ...The busbars in high power neutral point clamped three-level inverters are modeled using the Maxwell Q3D Extractor software, which is based on the partial element equivalent circuits method. The equivalent circuits of the busbars and devices model are simulated in the electric simulator PSlM to analyze the effects of the parasitic inductance on the switching characteristics of the integrated gate commutated thyristor （IGCT） in different topology positions. The simulation results agree well with the measured impedance analyzer results and the IGCT test results, which proves the effectiveness of the modeling method for the large, complex busbars.展开更多
基金supported by the Pri⁃mary Research&Development Plan of Jiangsu Province(Nos.BE2022070,BE2022070-2).
文摘For high-voltage and high-power Gallium Nitride(GaN)power amplifiers,a drain modulation circuit with rapid rise and fall time is proposed in this paper.To decrease the rise and fall time,the high-side bootstrap drive circuit with an auxiliary discharge switch is proposed.The effect of the parasitics is analyzed based on calculation and the parallel bonding is proposed.The storage capacitance of power supply is calculated quantitatively to provide large pulse current.To ensure safe operation of the power amplifier,the circuit topology with the dead-time control and sequential control is proposed.Finally,a prototype is built to verify the drain modulation circuit design.The experiments prove that the rise time and fall time of the output pulse signal are both less than 100 ns.
基金This work was supported by the National Natural Science Foundation of China (Grant No.69876024)National Key Fundamental Research Foundation of China (Grant No. G1988030404)Natural Science Foundation of U.S.A. (Grant No. ECR-0096383).
文摘The high frequency resistance and inductance of the 3-D complex interconnect structures can be calculated by solving an eddy current electromagnetic problem. In this paper, a model for charactering such a 3-D eddy current problem is proposed, in which the electromagnetic fields in both the conducting and non-conducting regions are described in terms of the magnetic vector potential, and a set of the indirect boundary integral equations (IBIE) is obtained. The IBIEs can be solved by boundary element method, so this method avoids discretizing the domain of the conductors. As an indirect boundary element method, it is of minimum order. It does not restrict the direction of the current in conductors, and hence it can consider the mutual impedance between two perpendicular conductors. The numerical results can well meet the analytical solution of a 2-D problem. The mutual impedance of two perpendicular conductors is also shown under the different gaps between conductors and different frequencies.
文摘The busbars in high power neutral point clamped three-level inverters are modeled using the Maxwell Q3D Extractor software, which is based on the partial element equivalent circuits method. The equivalent circuits of the busbars and devices model are simulated in the electric simulator PSlM to analyze the effects of the parasitic inductance on the switching characteristics of the integrated gate commutated thyristor （IGCT） in different topology positions. The simulation results agree well with the measured impedance analyzer results and the IGCT test results, which proves the effectiveness of the modeling method for the large, complex busbars.
