State Variable Model for Considering the Parasitic Inductor Resistance on the Open Loop Performance of DC to DC Converters

This paper shows DC and small-signal circuit models for the PWM DC to DC buck, boost and back/ boost converters with the equivalent series resistance of the inductor. The DC voltage transfer function and the efficiency of the converter are derived from the DC model. Small-signal open-loop characteristics are derived from the small-signal model based on a state variable model. A design example proves the performance of the circuit and verification of the model.

Hydraulic Resistance and Capacitance in the Soil-Plant System

In this paper, the hydraulic resistances and capacitances were evaluated. based on the development of non-(?) model of water flow in the soil-plant system and the simulating experiment work.The results show that the mean hydraulic resistance in the soil-plant system is 6.79×109 MPa·S·m-3; the mean hydraulic capacitance in the system is 5.2×107m3·MPa-1. In the components of hydraulic capacitance in the system, the capacitance in soil (81.8×10-6m3·MPa ) is the biggest and its variability with suii water potential is extremely strong, the capacitance in plant (5.3×10-7m3·MPa-1) is much smaller than that in soil, and the capacitance in shoots (15.5×10-7m3·2MPa-1) is bigger than that in roots (8.4×10-7m3·2MPa-1). An interesting result is that the capacitance in plant is almost equivalent to that in the soil-plant system.

Instability of parasitic capacitance in T-shape-gate enhancementmode AlGaN/GaN MIS-HEMTs

Parasitic capacitances associated with overhangs of the T-shape-gate enhancement-mode(E-mode)GaN-based power device,were investigated by frequency/voltage-dependent capacitance-voltage and inductive-load switching measurements.The overhang capacitances induce a pinch-off voltage distinguished from that of the E-mode channel capacitance in the gate capacitance and the gatedrain capacitance characteristic curves.Frequency-and voltage-dependent tests confirm the instability caused by the trapping of interface/bulk states in the LPCVD-SiNx passivation dielectric.Circuit-level double pulse measurement also reveals its impact on switching transition for power switching applications.

On the uncertainty of interwell connectivity estimations from the capacitance-resistance model

The capacitance-resistance model （CRM） is an alternative to conventional reservoir simulation. CRM, a simplification of complex numerical models, uses production and injection rates to infer a reservoir description. There is no prior geologic model. The principal output of CRM fitting is the fraction of injected fluid （usually water） that is produced at a producer at steady-state. These fractions are interwell connectivities. Interwell connectivities are fundamental information needed to manage waterfloods in oil reservoirs. The data-driven CRM is a fast tool to estimate these parameters in mature fields and allows one to make full use of the dynamic data available. This paper considers the problem of setting an upper bound on the uncertainty of interwell connectivities for linear-constrained models. Using analytical bounds and numerical simulations, we derive a consistent upper limit on the uncertainty of interwell connections that can be used to quantify the information content of a given dataset.

Input signal design to estimate interwell connectivities in mature fields from the capacitance-resistance model

Interwell connectivities are fundamental parameters required to manage waterfloods in oil reservoirs. Data-driven models, such as the capacitance-resistance model （CRM）, are fast tools to estimate these parameters from time-correlations of input （injection rates） and output （production rates） signals. Noise and structure of the input time-series impose limits on the information that can be extracted from a given data-set. This work uses the CRM to study general prescriptions for the design of input signals that enhance the information content of injection/production data in the estimation of well-to-well interactions. Numerical schemes and general features of the optimal input signal strategy are derived for this problem.

Effect of displacement on resistance and capacitance of polyaniline film

This paper investigates the properties of displacement sensors based on polyaniline （PANI） films. About 1 wt% of PANI micropowder is mixed and stirred in a solution of 90 wt% water and 10 wt% alcohol at room temperature. The films of PANI axe deposited from solution by drop-casting on Ag electrodes, which are preliminary deposited on glass substrates. The thicknesses of the PANI films are in the range of 20 μm-80 μm. A displacement sensor with polyaniline film as an active material is designed and fabricated. The investigations showed that, on average, the AC resistance of the sensor decreases by 2 times and the capacitance accordingly increases by 1.6 times as the displacement changes in the range of 0 mm-0.5 mm. The polyaniline is the only active material of the displacement sensor. The resistance and capacitance of the PANI changes under the pressure of spring and elastic rubber, and this pressure is created by the downward movement of the micrometer.

Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors

The parasitic source resistance（RS） of AlGaN/AlN/GaN heterostructure field-effect transistors（HFETs） is studied in the temperature range 300–500 K. By using the measured RSand both capacitance–voltage（C–V） and current–voltage（I–V） characteristics for the fabricated device at 300, 350, 400, 450, and 500 K, it is found that the polarization Coulomb field（PCF） scattering exhibits a significant impact on RSat the above-mentioned different temperatures. Furthermore, in the AlGaN/AlN/GaN HFETs, the interaction between the additional positive polarization charges underneath the gate contact and the additional negative polarization charges near the source Ohmic contact, which is related to the PCF scattering, is verified during the variable-temperature study of RS.

Single nucleotide polymorphisms in candidate genes are significantly associated with resistance to Haemonchus contortus infection in goats

Background: Haemonchosis is a major economic problem in goat production in humid, tropical and subtropical regions. The disease is caused by an abomasal nematode, Haemonchus contortus, which is highly pathogenic in small ruminants. The aim of this study was to identifying single-nucleotide polymorphisms(SNP) that were associated with fecal egg counts(FEC) and could be used as markers to identify resistance to H. contortus in goats.Results: Ten novel variants in the CI TA, ATP2 A3, HSPA8, STAT5 B, ESYT1, and SERPING1 genes were associated with FEC in goats with a nominal significance level of P < 0.05. Two missense mutation in the exon region of the caprine CI TA gene resulted in replacement of arginine with cysteine at position 9473550(R9473550 C) and aspartic acid with glutamic acid at position 9473870(D9473870 E). Chinese goat breeds had significantly higher FEC than Bangladeshi goat breeds within their respective genotypes. Polymorphism information content(PIC), effective al ele number(Ne), and heterozygosity(He)were greatest for the STAT5 B197A > G SNP locus in al goat breeds. Pairwise coefficients of linkage disequilibrium(D′, r2)revealed complete LD(r2= 1) between significant SNP polymorphisms in CI TA and SERPING1 and strong LD(r2= 0.93 and0.98) between polymorphisms in HSPA8 and ATP2 A3, respectively. Correlation coefficient(r) between FEC and body weight(BW) was significantly positive(r = 0.56***, P < 0.001) but that between FEC and packed cel volume(PCV) was negatively significant(r =-0.47**, P < 0.01) in the total population of goats. On the other hand, correlation coefficient(r)between BW and PCV was not significant in total population of goats. Association analysis revealed that haplotypes within ATP2 A3, HSPA8, and SERPING1 were significantly associated with FEC. Quantitative real-time PCR revealed that the relative expression of m RNA was higher(P < 0.001) for resistant, compared to susceptible, groups of goats for al candidate genes except CI TA.Conclusions: This study identified SNP markers that can potential y be used in marker-assisted selection programs to develop goat breeds that are resistant to H. contortus.

Low-parasitic ESD protection strategy for RF ICs in 0.35μm CMOS process

A systemic and comprehensive ESD-induced parasitic model is presented in this paper, which is used to analyse the parasitic influences of electrostatic discharge （ESD） protection circuits on the performance of radio frequency applications. A novel low-parasitic ESD protection structure is made in a 0.35μm 1P3M silicide CMOS process. The measured results show that this novel structure has a low parasitic capacitance about 310fF and a low leakage current about 12.2nA with a suitable ESD robustness target about 5kV human body model.

Analytical capacitance model for 14 nm Fin FET considering dual-k spacer

The conformal mapping of an electric field has been employed to develop an accurate parasitic capacitance model for nanoscale fin field-effect transistor（Fin FET） device. Firstly, the structure of the dual-layer spacers and the gate parasitic capacitors are thoroughly analyzed. Then, the Cartesian coordinate is transferred into the elliptic coordinate and the equivalent fringe capacitance model can be built-up by some arithmetical operations. In order to validate our proposed model, the comparison of statistical analysis between the proposed calculation and the 3D-TCAD simulation has been carried out, and several different material combinations of the dual-k structure have been considered. The results show that the proposed analytical model can accurately calculate the fringe capacitance of the Fin FET device with dual-k spacers.

Analysis of Capacitive Parasitism in PWM Inverter-Fed Motor

The effects of parasitic capacitance in induction motor system are unnoticed when it is fed from the AC line, but they are obvious when supplied directly from a PWM inverter. Consequently, many parasitic problems occur, such as motor to earth leakage current, bearing current, incoming line current distortion and uneven distribution of electrical stresses along the winding. On the basis of the uniform transmission line principle, a complete equivalent circuit of the PWM inverter fed motor system is presented, based on which all the capacitive parasitic problems mentioned above are analyzed and simulated by means of PSPICE. All the results are consistent with the existing ones.

Accurate capacitance-voltage characterization of organic thin films with current injection

To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage(C-V)characterization of organic thin films when current injection is significant,a three-element equivalent circuit model is proposed.On this basis,the expression of real capacitance in consideration of current injection is theoretically derived by small-signal analysis method.The validity of the proposed equivalent circuit and theoretical expression are verified by a simulating circuit consisting of a capacitor,a diode,and a resistor.Moreover,the accurate C-V characteristic of an organic thin film device is obtained via theoretical correction of the experimental measuring result,and the real capacitance is 35.7%higher than the directly measured capacitance at 5-V bias in the parallel mode.This work strongly demonstrates the necessity to consider current injection in C-V measurement and provides a strategy for accurate C-V characterization experimentally.

Parasitic effects of air-gap through-silicon vias in high-speed three-dimensional integrated circuits

In this paper,ground-signal-ground type through-silicon vias（TSVs） exploiting air gaps as insulation layers are designed,analyzed and simulated for applications in millimeter wave.The compact wideband equivalent-circuit model and passive elements（RLGC） parameters based on the physical parameters are presented with the frequency up to 100 GHz.The parasitic capacitance of TSVs can be approximated as the dielectric capacitance of air gaps when the thickness of air gaps is greater than 0.75 μm.Therefore,the applied voltage of TSVs only needs to achieve the flatband voltage,and there is no need to indicate the threshold voltage.This is due to the small permittivity of air gaps.The proposed model shows good agreement with the simulation results of ADS and Ansoft＇s HFSS over a wide frequency range.

On the Absence of Carrier Drift in Two-Terminal Devices and the Origin of Their Lowest Resistance Per Carrier R_k=h/Q²

After a criticism on today’s model for electrical noise in resistors, we pass to use a Quantum-compliant model based on the discreteness of electrical charge in a complex Admittance. From this new model we show that carrier drift viewed as charged particle motion in response to an electric field is unlike to occur in bulk regions of Solid-State devices where carriers react as dipoles against this field. The absence of the shot noise that charges drifting in resistors should produce and the evolution of the Phase Noise with the active power existing in the resonators of L-C oscillators, are two effects added in proof for this conduction model without carrier drift where the resistance of any two-terminal device becomes discrete and has a minimum value per carrier that is the Quantum Hall resistance Rk=h/q2

Parasitic Effects on the Performance of DC-DC SEPIC in Photovoltaic Maximum Power Point Tracking Applications

This paper presents an analysis of the effect of parasitic resistances on the performance of DC-DC Single Ended Pri- mary Inductor Converter (SEPIC) in photovoltaic maximum power point tracking (MPPT) applications. The energy storage elements incorporated in the SEPIC converter possess parasitic resistances. Although ideal components significantly simplifies model development, but neglecting the parasitic effects in models may sometimes lead to failure in predicting first scale stability and actual performance. Therefore, the effects of parasitics have been taken into consideration for improving the model accuracy, stability, robustness and dynamic performance analysis of the converter. Detail mathematical model of SEPIC converter including inductive parasitic has been developed. The performance of the converter in tracking MPP at different irradiance levels has been analyzed for variation in parasitic resistance. The converter efficiency has been found above 83% for insolation level of 600 W/m2 when the parasitic resistance in the energy storage element has been ignored. However, as the parasitic resistance of both of the inductor has increased to 1 ohm, a fraction of the power managed by the converter has dissipated;as a result the efficiency of the converter has reduced to 78% for the same insolation profile. Although the increasing value of the parasitic has assisted the converter to converge quickly to reach the maximum power point. Furthermore it has also been observed that the peak to peak load current ripple is reduced. The obtained simulation results have validated the competent of the MPPT converter model.

Possibility of a Novel Warm-Up Strategy Using Capacitive and Resistive Electric Transfer: A Pilot Study

[Purpose] Capacitive and resistive electric transfer (CRET) is becoming prevalent in sports settings. CRET is effective for improving pain and healing injured tissue;however, its influence on muscle function and morphology is still unclear. This study confirmed the immediate effects of CRET on the duration of muscular stiffness and range of motion (ROM). [Method] This study describes the protocol for a single-arm trial with the non-blinding of participants and researchers. Twenty-four healthy men participated in the study. They received CRET therapy for their low back areas. The muscular stiffness of the multifidus muscle (superficial and deep) and the ROM using the active straight leg raise (ASLR) test were measured pre-intervention, post-intervention (immediately), and 15 and 30 min post-intervention. We compared these parameters using a one-way analysis of variance and Dunnett’s test (multiple comparison tests for subtests). [Results] The muscular stiffness of the superficial and deep multifidus muscles was significantly decreased, and the ASLR test showed a significant increase compared with the test performed pre-intervention. In addition, these effects persisted for 30 min. [Conclusion] Warm-up is vital for improving muscular stiffness and increasing the ROM. CRET is a useful device for achieving these aims, particularly as a passive warm-up method in sports settings.

The Use of RNA Interference in Enhancing Plant Resistance against Nematodes

Plant-parasitic nematodes caused severe yield loss in major crops all over the world.The most wild-used strategies to combat the nematodes is the chamical nematicides,but the overuse of synthetic nematicides threaten sustainable agriculture development.Other strategies,like resistance cultivars and crop rotation,have limited efficiency.Thus,the utilization of molecular biotechnology like RNA interference(RNAi)would be one of the alternative ways to enhance plant resistance against nematodes.RNAi has already used as a tool for gene functional analysis in a wide range of species,especially in the non-parasitic nematode,Caenorhabtidis elegans.In plant-parasitic nematodes,RNAi is induced by soaking nematodes with double strand RNA(dsRNA)solution mixed with neurostimulants,which is called in vitro RNAi delivery method.In another way around,in planta RNAi method,which is Host-mediated RNAi approach also showed a great success in conferring the resistance against root-knock nematodes.Two main advantages of RNAi-based transgenics are RNAi technology do not produce any functional foreign proteins and it target organisms in a sequence-specific way.Even though the development of RNAi-based transgenics against plant-parasitic nematodes is still in the initial phase,it offers the prospect into a novel nematode control strategy in the future.

Effect of the Dynamic Resistance on the Maximum Output Power in Dynamic Modelling of Photovoltaic Solar Cells

Several studies on PV solar cells are found in the literature which use static models. Those models are mainly one-diode, two-diode or three-diode models. In the dynamic modelling, a variable parallel capacitance is incorporated. Unlike the previous studies which do not clearly establish a relationship between the capacitance and the voltage, in the present paper, the link between the capacitance and the voltage is investigated and established. In dynamic modelling investigated in this paper, the dynamic resistance is introduced in the modelling of the solar cell. It is introduced in the current-voltage characteristic. The value of the dynamic resistance is evaluated at the maximum power point and its effect on the maximum power is investigated. The study shows for the first time, that the dynamic resistance must be introduced in the current-voltage characteristic, because it has an influence on the PV cell output.

Simulation and structure optimization of triboelectric nanogenerators considering the effects of parasitic capacitance

Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists in electric circuits, and it is the most important second-order non-ideal effect that must be considered while designing a triboelectric nanogenerator （TENG） because its magnitude is comparable to the magnitude of the TENG capacitance. This paper investigates the structure and performance optimization of TENGs through modeling and simulation, taking the parasitic capacitance into account. Parasitic capacitance is generally found to cause severe performance degradation in TENGs, and its effects on the optimum matching resistance, maximum output power, and structural figures-of-merit （FOMs） of TENGs are thoroughly investigated and discussed. Optimum values of important structural parameters such as the gap and electrode length are determined for the different working modes of TENGs, systematically demonstrating how these optimum structural parameters change as functions of the parasitic capacitance. Additionally, it is demonstrated that the parasitic capacitance can improve the height tolerance of the metal freestanding-mode TENGs. This work provides a theoretical foundation for the structure and performance optimization of TENGs for practical applications and promotes the development of mechanical energy-harvesting techniques.

Impact of parasitic resistance on the ESD robustness of high-voltage devices

The impacts ofsubstrate parasitic resistance and drain ballast resistance on electrostatic discharge （ESD） robustness of LDMOS are analyzed. By increasing the two parasitic resistances, the ESD robustness of LDMOS are significantly improved. The proposed structures have been successfully verified in a 0.35μm BCD process without using additional process steps. Experimental results show that the second breakdown current of the optimal structure increases to 3,5 A, which is about 367% of the original device.