Non-contact evaluation of the resonant frequency of a microstructure using ultrasonic wave

This paper presents a novel non-contact method for evaluating the resonant frequency of a microstructure, Firstly, the microstructure under test is excited by ultrasonic waves. This excitation method does not impose any undefined load on the specimen like the electrostatic excitation and also this is the first actual use of ultrasonic wave for exciting a microstructure in the literature. Secondly, the amplitudes of the microstructure are determined by image edge detection using a Mexican hat wavelet transform on the vibrating images of the microstructure. The vibrating images are captured by a CCD camera when the microstructure is vibrated by ultrasonic waves at a series of discrete high frequencies （〉30 kHz）. Upon processing the vibrating images, the amplitudes at various excitation frequencies are obtained and an amplitude-frequency spectrum is obtained from which the resonant frequency is subsequently evaluated. A micro silicon structure consisting of a perforated plate （192 × 192 μm） and two cantilever beams （76 × 43 μm） which is about 4 μm thickness is tested. Since laser interferometry is not required, thermal effects on a test object can be avoided. Hence, the setup is relatively simple. Results show that the proposed method is a simple and effective approach for evaluating the dynamic characteristics of microstructures.

Probing the minigap in topological insulator-based Josephson junctions under radio frequency irradiation

Recently,a contact-resistance-measurement method was developed to detect the minigap,hence the Andreev bound states(ABSs),in Josephson junctions constructed on the surface of three-dimensional topological insulators(3D TIs).In this work,we further generalize that method to the circumstance with radio frequency(rf)irradiation.We find that with the increase of the rf power,the measured minigap becomes broadened and extends to higher energies in a way similar to the rf power dependence of the outer border of the Shapiro step region.We show that the corresponding data of contact resistance under rf irradiation can be well interpreted by using the resistively shunted Josephson junction(RSJ)model and the Blonder–Tinkham–Klapwijk(BTK)theory.Our findings could be useful when using the contact-resistancemeasurement method to study the Majorana-related physics in topological insulator-based Josephson junctions under rf irradiation.

Parametric Study of Low Frequency Broadband Rectilinear-to-Rotary Vibrational Energy Harvesting

A parametric study of a high-power-density dual resonator for achieving low frequency broadband electromagnetic energy harvesting is reported.The dual resonator consists of a rectilinear oscillator(R_LO)performing magnetic levitation and a rotary oscillator(R_TO)performing electromagnetic coupling through a stator and a rotor.Both oscillators,coupled by magnetic forces generated by a set of arc permanent magnets,radially magnetized and centro-symmetrically fixed onto the R_LO and the rotor of the R_TO achieve the reciprocating-to-rotary motion conversion and frequency up-conversion.Specifically,the dual resonator is able to convert stochastic reciprocating motion into controllable rotation,provide intrinsic frequency up-conversion,use non-contact magnetic coupling to provide near loss-free energy transfer and be configured into specific applications to obtain and maintain high-energy orbits of multi-stable energy harvesting.While solely focusing on developing a dual resonator provides substantial benefits,its dynamic behavior is unclear,thus electromagnetic-dynamic governing equations are derived,and a curve fitting model of restoring torque of R_TO under different repulsive magnets configurations are developed to predict key characteristics and to improve performance of the electromechanical system.Power analysis is carried out for providing aquantitative guidance of customizing the harvester to achieve an optimal power density.

Improvement of surface hydrophobicity on silicone rubber modified by CF_4 radio frequency capacitively coupled plasma

In order to improve the surface hydrophobicity, silicone rubber (SIR) samples were exposed to CF4 radio frequency (RF) capacitively coupled plasma (CCP). Attenuated total reflection Fourier transform infrared (ATR-FTIR) spectrum and X-ray photoelectron spectroscopy (XPS) were used to observe the variation of the functional groups of the modified SIR. Static contact angle (SCA) was employed to estimate the change of hydrophobicity of the modified SIR. The surface energy of SIR is reduced largely from 27.37 mJ/m2 of original SIR sample to 2.94 mJ/m2 of SIR sample treated by CF4 CCP modification at RF power of 200 W for a treatment time of 5 min. According to the XPS, ATR-FTIR and surface energy analysis, it is suggested that the improvement of hydrophobicity on the modified SIR surface is mainly ascribed to the decrease of surface energy, which is caused by the cooperation of the fluosilicic structure of Si—F or Si—F2 and the fluoric groups of C—CFn induced by the methyl replacement reaction and residual methyl groups of SIR surface.

Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

The effects of back gate bias(BGEs) on radio-frequency(RF) performances in PD SOI n MOSFETs are presented in this paper. Floating body(FB) device, T-gate body-contact(TB) device, and tunnel diode body-contact(TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency( fT), maximum frequency of oscillation( fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance(gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance(gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.

Dynamic test methods for natural frequency of footbridge

Using environmental random vibration as the excitation,traditional accelerometer method,non-contact video method and non-contact laser method were employed to determine the natural frequency of Kunyu River footbridge.All the results of these three methods are close to 2.70 Hz,which are concordant with each other and hence credible.

基于分层分区域虚拟材料方法的丝杠螺母结合部精确建模研究

为了建立精确的滚珠丝杠螺母结合部模型,基于多目标优化方法获取其结合部虚拟材料模型的参数,构建了精确的结合部虚拟梯度材料模型,从而建立了准确的滚珠丝杠螺母结合部动力学模型,并通过实验对此方法建立的动力学模型进行了实验验证。结果表明:基于虚拟梯度材料法建立的结合部模型具有较高的精度,梯度结构材料层的宏观材料特性在空间上呈现与接触应力随滚珠相位角分布相同的变化,据此能够充分表征滚珠轴承中滚珠和滚道接触面间接触应力分布不均匀的特性。

家师关系与小学生学校态度:师生关系的中介作用及父母差异

良好的家师关系是家校合作的基础,有利于形成教育合力、促进学生全面发展。研究对北京1366名小学四年级学生及其父母进行连续两年的测查,旨在探讨师生关系在家师关系对小学生学校态度影响间的中介作用,并分析父母差异。结果发现:(1)父亲和母亲报告的家师关系质量均能负向预测学校回避,家师联系频率均能负向预测学校喜欢;(2)母亲报告的家师关系质量能正向预测学校喜欢、家师联系频率能正向预测学校回避,而父亲报告的这两条路径均不显著,存在父母差异;(3)师生关系在父亲和母亲报告的家师关系质量对学校喜欢和学校回避的影响中均起中介作用。

陶瓷密封环旋转摩擦噪声特性研究

旋转机械密封采用的陶瓷密封环在航空航天领域应用广泛,但其干摩擦产生的噪声问题一直未得到解决。以陶瓷密封环为研究对象,在旋转摩擦试验台上通过振动加速度传感器和精密拾音器等测得振动与噪声信号,分析了陶瓷密封环的旋转摩擦随机啸叫的特点和产生机理。试验结果表明,振动加速度的倍频响应与高频啸叫关联,转动速度是影响振动和啸叫特征频率的主要因素。根据试验建立密封环的有限元仿真模型,采用瞬态动力学分析方法,得出的各转速特征频率与试验较为吻合;获得摩擦表面的接触压力,发现转动时摩擦接触界面的反复分离-附着现象,这被认为是试验中啸叫的主要机制。另外转速越大,接触压力越大,从而可推断出摩擦力越大,其诱发的啸叫声压级更大,这与试验测得转速和声压级正相关关系吻合。

基于弧触头接触振动特征分析的高压SF6断路器电寿命在线监测方法

高压SF6断路器电寿命评估对保障电力系统安全稳定运行具有重要意义。然而,现有的电寿命评估仍旧依赖累计开断电流法与动态回路电阻法,缺乏有效的在线监测手段。该文针对真实126 kV高压SF6断路器设备,研究了基于弧触头接触点分析的电寿命评估方法。结合变分模态分解(VMD)与短时傅里叶变换(STFT)分析,发现弧触头接触时产生了10 kHz以上的高频振动特征信号。通过调整机构拉杆的位置以改变弧触头刚合点,发现了高频振动特征频率出现时刻与弧触头刚合点之间的相关性,进而提出了一种基于弧触头接触振动特征分析的高压SF6断路器电寿命在线监测方法。现场瓷柱式断路器的实验结果表明,弧触头刚合点测量误差约为0.905 mm,因此该文提出的方法有望在高压SF6断路器电寿命在线监测领域实现推广应用。

染污绝缘子放电空间电场时频特性研究

恶劣气象条件地区的污闪事故时有发生,而目前对污秽外绝缘放电机制的理解还不够全面。为揭示污秽绝缘子放电空间电场特性,该文提出了一种新的污闪预警方法。在前期研究基础上,开展了染污绝缘子放电空间电场波形监测试验,重点研究了空间电场波形的时频特征参量。对于时域特征,对空间电场信号有效值、峰峰值、峰值因子三个时域特征量进行了研究,获得了其与盐密、绝缘子闪络状态的关系;对于频域特征,对空间电场信号进行傅里叶分解,获得了不同试验条件下的频谱图,发现发生闪络时,绝缘子空间电场信号中谐波分量占比升高,并提出可用三次谐波因子来描述绝缘子污闪放电发展程度。研究成果可进一步揭示污闪放电机制,并为解决恶劣环境下输电线路污闪预警的实际工程问题提供技术支撑。

基于双PSD的三维测角传感器精度分析

在机载光电转台、多自由度摇摆台等系统中,对于一些运动体与基座间没有确定的回转轴的柔性支撑、并联支撑平台,需要考虑非接触三轴角度测量方法,目前大部分的光电非接触三轴角度测量方案系统复杂,占用空间大,无法适用于如机载、星载等载荷对体积、质量敏感的场景。为此,文中提出了基于双位置敏感探测器(PSD)的非接触三轴角度测量方案,使用准直镜头汇聚、双面反射光楔反射,将光源在两片PSD上汇聚成像,利用PSD上的光斑位置坐标反解出三轴角度。描述了其工作原理以及传感器构成,分析了因两片PSD的相对位置偏移产生的误差,提出了对应补偿方法以减少焊装产生的PSD位置偏移对测量精度的影响。主要对采集的PSD模拟信号值的抖动噪声进行FIR滤波处理,分析了滤波器的相频响应特性,并在MCU中测量相位滞后时间以及滤波器的响应带宽,验证了该数字滤波器在系统内拥有较好的实时传输特性。自准直测量单元总质量为230 g,尺寸为50 mm×50 mm×50 mm。实验结果表明,34阶FIR滤波器将角度测量的误差减小至60%,在±2°测量范围内单轴测量时,方位角、俯仰角、横滚角的误差均方根分别为0.003°、0.007°、0.017°,组合测量时分别为0.006°、0.009°、0.021°,文中所提出的三维测角传感器精度较高,满足机载等场景的使用要求。

退火对不同金属薄膜上的BN/MoS_(2)异质结构形貌、结构和电性能的影响

以过渡金属硫化物、氮化硼等二维层状材料为基础,研究了一种简单可靠的集成电路制造方法。在这项工作中,采用射频磁控溅射在室温下逐层制备了M/BN/MoS_(2)(M=Al、Ti、Mo和Ag)纳米薄膜,其中BN/MoS_(2)为未发生化学反应的异质结构,然后在500℃进行退火。结果表明:所制备的金属(Al、Ti、Mo和Ag)、BN和MoS_(2)薄膜均匀连续,特别是BN/MoS_(2)异质结构界面清晰、结合紧密。退火后,顶层MoS_(2)薄膜颗粒大小、粗糙度和结晶性显著提高,且杂质减少甚至消失,其中Ag/BN膜基底上MoS_(2)薄膜结晶性最好,且出现了较大的片层状形态。电性能测试显示金属/BN和BN/MoS_(2)异质结构界面的肖特基势垒使得样品的I-V特性曲线呈明显的非线性。Ti基由于退火后氧化,电阻率最大,Mo基功函数最大,电阻率其次,Ag基功函数相对较低所以电阻率较低,而Al则由于低的功函数、结构匹配及载流子浓度等因素导致其电阻率最低。

Meniscus Behavior in Electromagnetic Soft-Contact Continuous Casting Round Billet Mold

Using molten Pb-Sn-Bi alloy, the meniscus shape under high frequency magnetic field of φ100 mm round billet caster was investigated. The effect of some parameters on meniscus shape was studied. The results show that for a mold with 12 segments, the meniscus shape is relatively stable. With increasing power input, the menis- cus height increases with intensification of fluctuation. For the given caster, the reasonable power input is about 70 kW. The coil should be near to the top of mold and/or the initial meniscus should be near to the center of the coil. The lower the frequency, the higher is the meniscus height. With increasing frequency, the free surface is more flattened and meniscus becomes more stable. In practice, the power input should be increased simultaneously with frequency. The optimal frequency is about 20 kHz.

Numerical analysis of elastic coated solids in line contact

A line contact model of elastic coated solids is presented based on the influence coefficients(ICs) of surface displacement and stresses of coating-substrate system and the traditional contact model. The ICs of displacement and stresses are obtained from their corresponding frequency response functions(FRF) by using a conversion method based on fast Fourier transformation(FFT). The contact pressure and the stress field in the subsurface are obtained by employing conjugate gradient method(CGM) and discrete convolution fast Fourier transformation(DC-FFT). Comparison of the contact pressure and subsurface stresses obtained by the numerical method with the exact analytical solutions for Hertz contact is conducted, and the results show that the numerical solution has a very high accuracy and verify the validity of the contact model. The effect of the stiffness and thickness of coatings is further numerically studied. The result shows that the effects on contact pressure and contact width are opposite for hard and soft coatings and are intensified with the increase of coating thickness; the locations of crack initiation and propagation are different for soft and hard coatings; the risk of cracks and delaminations of coatings can be brought down by improving the lubrication condition or optimizing the non-dimensional parameter h/bh. This research offers a tool to numerically analyze the problem of elastic coated solids in line contact and make the blindness and randomness of trial-type coating design less.

Performance comparison of zero-Schottky-barrier and doped contacts carbon nanotube transistors with strain applied

Atomistic quantum simulation is performed to compare the performance of zero-Schottky-barrier and doped source-drain contacts carbon nanotube field effect transistors(CNTFETs) with strain applied. The doped source-drain contact CNTFETs outperform the Schottky contact devices with and without strain applied. The off-state current in both types of contact is similar with and without strain applied. This is because both types of contact offer very similar potential barrier in off-state. However, the on-state current in doped contact devices is much higher due to better modulation of on-state potential profile, and its variation with strain is sensitive to the device contact type. The on/off current ratio and the inverse subthreshold slope are better with doped source-drain contact, and their variations with strain are relatively less sensitive to the device contact type. The channel transconductance and device switching performance are much better with doped source-drain contact, and their variations with strain are sensitive to device contact type.

A Normal Contact Stiffness Model of Joint Surface Based on Fractal Theory

Based on the fractal theory,a normal contact stiffness model is established.In the model,the asperity is initially in elastic deformation under contact interference.As the interference is increased,a transition from elastic to elastoplastic to full plastic deformation occurs in this order.The critical elastic interference,the first elastoplastic critical interference and the second elastoplastic critical interference are scale-dependent.According to the truncated asperity size distribution function,the relations between the total normal contact stiffness and the total contact load are obtained.The results show the total normal contact stiffness depends on the range of frequency indexes of asperities.The normal contact stiffness in elastic deformation is major contribution to the total normal contact stiffness.When the first six frequency indexes are less than the critical elastic frequency index,the dimensionless load-stiffness relation approximately isF^*r^(K^*r)^3.When the initial frequency index is greater than the critical elastic frequency index,the dimensionless load-stiffness relation approximately isF^*r^K^*r.The comparison between the theoretical results and the experimental results indicates that the theoretical results are consistent with the experimental data;therefore,the present fractal model of contact stiffness is reasonable.

A Spring-Layer Model for a Bi-Layered Plate-Strip with Initial Stress Through Imperfect Contact Interface

In this paper,we present our report on the forced vibration of a bi-layered plate-strip with initial stress resting on a rigid foundation induced by a time-harmonic force.The investigation is carried out according to the piecewise homogeneous body model with utilizing the three-dimensional linearized theory of elastic waves in initially stressed bodies(TLTEWISB).The materials of the body are chosen to be linearly elastic,homogeneous,and isotropic.The interface between the layers is assumed to be imperfect,and is simulated by the spring-layer model.A similar degree of imperfection on the interface is realized in the normal and tangential directions.The mathematical model for the problem under consideration is designed,and the system of the equations of motion is approximately solved by employing the finite element method(FEM).The numerical results explaining the influence of the parameter that characterizes the degree of corresponding imperfectness on the dynamic response of the plate-strip are presented.In particular,we demonstrate that the distributions of the normal stress become flat,as the normal-spring parameter increases.

Influence of Heat Exchange Coefficients on Both Optimized Thermal Contact (OTCR) and Critical (CTCR) Resistances at the Contact Interface of a Flat Concrete Slab and a Rice Straw Board

The study is carried out in imperfect contact with a concrete slab wall attached to a panel based on rice straw compressed in a dynamic frequency regime. We will propose the characterization of thermal insulation for thermal resistance of contact (x = 0.05 m). The impact of heat exchange coefficients on the front face (x = 0 m) and the rear face (x = 0.1 m) on these resistors is shown.