Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET

In this paper, we investigate the single event transient （SET） occurring in partially depleted silicon-on-insulator （PDSOI） metal-oxide-semiconductor （MOS） devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test （DUT）. The dependences of SET characteristics on drain-induced barrier lowering （DIBL） and the parasitic bipolar junction transistor （PBJT） are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications.

Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET

In this study, we investigate the single-event transient（SET） characteristics of a partially depleted silicon-on-insulator（PDSOI） metal-oxide-semiconductor（MOS） device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor（p-BJT） effect by performing both a laser test and simulations.

Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures

Radio-frequency（RF） characteristics under ultra-low temperature of multi-finger partially depleted silicon-oninsulator（PD SOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs） with tunnel diode body-contact（TDBC） structure and T-gate body-contact（TB） structure are investigated in this paper.When operating at 77 K,TDBC device suppresses floating-body effect（FBE） as well as the TB device.For TB device and TDBC device,cut-off frequency（fT） improves as the temperature decreases to liquid-helium temperature（77 K） while that of the maximum oscillation frequency（/max） is opposite due to the decrease of the unilateral power gain.While operating under 77 K,fT and f（max） of TDBC device reach to 125 GHz and 77 GHz,representing 8%and 15% improvements compared with those of TB device,respectively,which is mainly due to the lower parasitic resistances and capacitances.The results indicate that TDBC SOI MOSFETs could be considered as promising candidates for analog and RF applications over a wide range of temperatures and there is immense potential for the development of RF CMOS integrated circuits for cryogenic applications.

Precision wire electrochemical machining of thick structures in powder superalloy René88DT using a partially insulated tube electrode

Wire electrochemical machining(WECM)is a potential method for manufacturing macrostructures from difficult-to-cut materials,such as turbine slots,with good surface integrity and low costs.In this study,a novel tube electrode with array holes in the front and insulation in the back was applied using WECM to improve the machining precision and efficiency.Additionally,assisted by an immersion electrolyte and axial flushing,the electrolyte-deficient gap was supplemented to achieve the cutting of a very thick workpiece.The simulation results indicated that this method could effectively reduce the machining gap and improve the uniformity of the electric-and flow-field distributions.Experiments verified that when the uninsulated range(machining angle)was reduced from 360°to 90°,the side machining gap was reduced from 462.5µm to 175µm.Finally,using optimized machining parameters,array slits with gaps as small as(175±10)μm were machined on a powder superalloy René88DT sample with a thickness of 10 mm at a feed rate of 16µm/s.The feasibility of fabricating complex profiles using this method was verified using a self-designed servo device.