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High-voltage super-junction lateral double-diffused metal-oxide semiconductor with a partial lightly doped pillar 被引量:3
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作者 伍伟 张波 +2 位作者 方健 罗小蓉 李肇基 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第6期633-636,共4页
A novel super-junction lateral double-diffused metal-oxide semiconductor (SJ-LDMOS) with a partial lightly doped P pillar (PD) is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge... A novel super-junction lateral double-diffused metal-oxide semiconductor (SJ-LDMOS) with a partial lightly doped P pillar (PD) is proposed. Firstly, the reduction in the partial P pillar charges ensures the charge balance and suppresses the substrate-assisted depletion effect. Secondly, the new electric field peak produced by the P/P junction modulates the surface electric field distribution. Both of these result in a high breakdown voltage (BV). In addition, due to the same conduction paths, the specific on-resistance (Ron,sp) of the PD SJ-LDMOS is approximately identical to the conventional SJ-LDMOS. Simulation results indicate that the average value of the surface lateral electric field of the PD SJ-LDMOS reaches 20 V/μm at a 15 μm drift length, resulting in a BV of 300 V. 展开更多
关键词 super-junction lateral double-diffused metal-oxide semiconductor partial lightly doped pillar electric field modulation breakdown voltage
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PSJ高压器件的优化设计 被引量:3
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作者 陈万军 张波 +1 位作者 李肇基 邓小川 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第6期1089-1093,共5页
基于Semi SJ(superjunction)结构,提出了SJ的比例可以从0~1渐变的PSJ(partialsuperjunction)高压器件的概念.通过对PSJ比导通电阻的分析,得到了PSJ高压器件比导通电阻优化设计的理论公式.计算了不同击穿电压的比导通电阻,并与二维器件... 基于Semi SJ(superjunction)结构,提出了SJ的比例可以从0~1渐变的PSJ(partialsuperjunction)高压器件的概念.通过对PSJ比导通电阻的分析,得到了PSJ高压器件比导通电阻优化设计的理论公式.计算了不同击穿电压的比导通电阻,并与二维器件模拟结果和实验结果相比较.讨论了BAL(bottomassistlayer)部分穿通因素η、p型区深度归一化参数r、p型区深宽比A以及PSJ漂移区掺杂浓度是否统一对PSJ高压器件比导通电阻的影响.其理论结果和器件模拟结果相吻合,为设计与优化PSJ高压器件提供了理论依据.PSJ结构特别适于制造工艺水平不高、很难实现大的p型区深宽比的情况,为现有工艺实现高压低导通电阻器件提供了一种新的思路. 展开更多
关键词 partial super junction RESURF 击穿电压 比导通电阻
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