Dynamic study in partial transient liquid phase bonding of Si_3N_4

Dynamics in partial transient liquid phase bonding (PTLP bonding) of Si_3N_4 ceramic with Ti/Cu/Ti multi-interlayer was systematically studied through micro-analysis of joint interfaces. The results show that growth of reaction layer and isothermal solidification procession do at the same time. Growth of reaction layer and moving of isothermal solidification interface obey the parabolic law governed by the diffusion of participating elements during the PTLP bonding. Coordination of the above two dynamics process is done through time and temperature. When reaction layer thickness is suitable and isothermal solidification process is finished, the high bonding strength at room temperature and high temperature are obtained.

Si_3N_4/Ti/Cu/Ti/Si_3N_4部分瞬间液相连接界面动力学

采用Ti(5μm)/Cu(70μm)/Ti中间层,通过改变连接时间和连接温度进行Si3N4陶瓷的部分瞬间液相连接(PTLP连接),用扫描电镜、电子探针对连接界面区域进行了分析,系统地研究了Si3N4/Ti/Cu/Ti/Si3N4PTLP连接过程的动力学。结果表明,界面反应层的生长和等温凝固界面的迁移均符合扩散控制的抛物线方程。PTLP连接参数的优化不同于通常的活性钎焊和固相扩散连接的参数优化,反应层生长和液相区等温凝固这两个过程必须协调,才能同时提高室温和高温连接强度。