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New Method of Total Ionizing Dose Compact Modeling in Partially Depleted Silicon-on-Insulator MOSFETs 被引量:4
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作者 黄建强 何伟伟 +3 位作者 陈静 罗杰馨 吕凯 柴展 《Chinese Physics Letters》 SCIE CAS CSCD 2016年第9期82-85,共4页
On the basis of a detailed discussion of the development of total ionizing dose (TID) effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- s... On the basis of a detailed discussion of the development of total ionizing dose (TID) effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide- semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with 60Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed. 展开更多
关键词 of New Method of Total Ionizing Dose Compact Modeling in partially depleted Silicon-on-Insulator MOSFETs for SOI TID in is IO NMOS on
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Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-μm MOSFET 被引量:6
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作者 毕津顺 曾传滨 +3 位作者 高林春 刘刚 罗家俊 韩郑生 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第8期631-635,共5页
In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient sig... In this paper, we investigate the single event transient (SET) occurring in partially depleted silicon-on-insulator (PDSOI) metal-oxide-semiconductor (MOS) devices irradiated by pulsed laser beams. Transient signal characteristics of a 0.18-p.m single MOS device, such as SET pulse width, pulse maximum, and collected charge, are measured and an- alyzed at wafer level. We analyze in detail the influences of supply voltage and pulse energy on the SET characteristics of the device under test (DUT). The dependences of SET characteristics on drain-induced barrier lowering (DIBL) and the parasitic bipolar junction transistor (PBJT) are also discussed. These results provide a guide for radiation-hardened deep sub-micrometer PDSOI technology for space electronics applications. 展开更多
关键词 laser test single event transient charge collection partially depleted silicon on insulator
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Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology 被引量:1
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作者 张梦映 胡志远 +4 位作者 张正选 樊双 戴丽华 刘小年 宋雷 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第8期144-147,共4页
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13?μm partially depleted silicon-on-insulator technology. The measured ... An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13?μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions. 展开更多
关键词 PDSOI Total Ionizing Dose Response of Different Length Devices in 0.13 m partially depleted Silicon-on-Insulator Technology
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Impact of back-gate bias on the hysteresis effect in partially depleted SOI MOSFETs
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作者 罗杰馨 陈静 +4 位作者 周建华 伍青青 柴展 余涛 王曦 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第5期473-478,共6页
The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted(PD) silicon-on-insulator(SOI) MOSFETs at different back-gate biases.I D hystere... The hysteresis effect in the output characteristics,originating from the floating body effect,has been measured in partially depleted(PD) silicon-on-insulator(SOI) MOSFETs at different back-gate biases.I D hysteresis has been developed to clarify the hysteresis characteristics.The fabricated devices show the positive and negative peaks in the I D hysteresis.The experimental results show that the I D hysteresis is sensitive to the back gate bias in 0.13-渭m PD SOI MOSFETs and does not vary monotonously with the back-gate bias.Based on the steady-state Shockley-Read-Hall(SRH) recombination theory,we have successfully interpreted the impact of the back-gate bias on the hysteresis effect in PD SOI MOSFETs. 展开更多
关键词 floating body effect hysteresis effect back gate bias partially depleted (PD) SOl
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Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI nMOSFETs
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作者 彭超 恩云飞 +3 位作者 雷志锋 陈义强 刘远 李斌 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第11期106-109,共4页
Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator (SOI) technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flick... Total ionizing dose effect induced low frequency degradations in 130nm partially depleted silicon-on-insulator (SOI) technology are studied by ^60Co γ -ray irradiation. The experimental results show that the flicker noise at the front gate is not affected by the radiation since the radiation induced trapped charge in the thin gate oxide can be ignored. However, both the Lorenz spectrum noise, which is related to the linear kink effect (LKE) at the front gate, and the flicker noise at the back gate are sensitive to radiation. The radiation induced trapped charge in shallow trench isolation and the buried oxide can deplete the nearby body region and can activate the traps which reside in the depletion region. These traps act as a GR center and accelerate the consumption of the accumulated holes in the floating body. It results in the attenuation of the LKE and the increase of the Lorenz spectrum noise. Simultaneously, the radiation induced trapped charge in the buried oxide can directly lead to an enhanced flicker noise at the back gate. The trapped charge density in the buried oxide is extracted to increase from 2.21×10^18 eV^-1 cm^-3 to 3.59×10^18?eV^-1 cm^-3 after irradiation. 展开更多
关键词 SOI MOSFET Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in partially depleted SOI nMOSFETs
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Experimental and simulation studies of single-event transient in partially depleted SOI MOSFET
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作者 闫薇薇 高林春 +4 位作者 李晓静 赵发展 曾传滨 罗家俊 韩郑生 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期520-525,共6页
In this study, we investigate the single-event transient(SET) characteristics of a partially depleted silicon-on-insulator(PDSOI) metal-oxide-semiconductor(MOS) device induced by a pulsed laser.We measure and an... In this study, we investigate the single-event transient(SET) characteristics of a partially depleted silicon-on-insulator(PDSOI) metal-oxide-semiconductor(MOS) device induced by a pulsed laser.We measure and analyze the drain transient current at the wafer level. The results indicate that the body-drain junction and its vicinity are more SET sensitive than the other regions in PD-SOI devices.We use ISE 3D simulation tools to analyze the SET response when different regions of the device are hit. Then, we discuss in detail the characteristics of transient currents and the electrostatic potential distribution change in devices after irradiation. Finally, we analyze the parasitic bipolar junction transistor(p-BJT) effect by performing both a laser test and simulations. 展开更多
关键词 single-event transient pulsed laser parasitic bipolar junction transistor partially depleted silicon on insulator
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Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures
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作者 吕凯 陈静 +3 位作者 黄瑜萍 刘军 罗杰馨 王曦 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第11期652-655,共4页
Radio-frequency(RF) characteristics under ultra-low temperature of multi-finger partially depleted silicon-oninsulator(PD SOI) n-type metal-oxide-semiconductor field-effect transistors(nMOSFETs) with tunnel diod... Radio-frequency(RF) characteristics under ultra-low temperature of multi-finger partially depleted silicon-oninsulator(PD SOI) n-type metal-oxide-semiconductor field-effect transistors(nMOSFETs) with tunnel diode body-contact(TDBC) structure and T-gate body-contact(TB) structure are investigated in this paper.When operating at 77 K,TDBC device suppresses floating-body effect(FBE) as well as the TB device.For TB device and TDBC device,cut-off frequency(fT) improves as the temperature decreases to liquid-helium temperature(77 K) while that of the maximum oscillation frequency(/max) is opposite due to the decrease of the unilateral power gain.While operating under 77 K,fT and f(max) of TDBC device reach to 125 GHz and 77 GHz,representing 8%and 15% improvements compared with those of TB device,respectively,which is mainly due to the lower parasitic resistances and capacitances.The results indicate that TDBC SOI MOSFETs could be considered as promising candidates for analog and RF applications over a wide range of temperatures and there is immense potential for the development of RF CMOS integrated circuits for cryogenic applications. 展开更多
关键词 depleted immense representing tunnel partially finger floating analog helium insulator
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Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect 被引量:1
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作者 周建华 高明辉 +1 位作者 彭树根 邹世昌 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第2期33-37,共5页
As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is ana... As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed. 展开更多
关键词 partially depleted SOI-CMOS floating body effect HOT-CARRIERS kink-effect gate oxide tunneling
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Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose effect of partially-depleted silicon-on-insulator input/output n-MOSFETs 被引量:1
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作者 彭超 胡志远 +5 位作者 宁冰旭 黄辉祥 樊双 张正选 毕大炜 恩云飞 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第9期154-160,共7页
we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator (PDSOI) input/output (I/O) n-MOSFETs. A shallow trench isolation (STI) parasitic transistor is responsi... we investigate the effects of 60^Co γ-ray irradiation on the 130 nm partially-depleted silicon-on-isolator (PDSOI) input/output (I/O) n-MOSFETs. A shallow trench isolation (STI) parasitic transistor is responsible for the observed hump in the back-gate transfer characteristic curve. The STI parasitic transistor, in which the trench oxide acts as the gate oxide, is sensitive to the radiation, and it introduces a new way to characterize the total ionizing dose (TID) responses in the STI oxide. A radiation enhanced drain induced barrier lower (DIBL) effect is observed in the STI parasitic transistor. It is manifested as the drain bias dependence of the radiation-induced off-state leakage and the increase of the DIBL parameter in the STI parasitic transistor after irradiation. Increasing the doping concentration in the whole body region or just near the STI sidewall can increase the threshold voltage of the STI parasitic transistor, and further reduce the radiation-induced off-state leakage. Moreover, we find that the radiation-induced trapped charge in the buried oxide leads to an obvious front-gate threshold voltage shift through the coupling effect. The high doping concentration in the body can effectively suppress the radiation-induced coupling effect. 展开更多
关键词 partially depleted silicon-on-isolator n-MOSFET sidewall implant shallow trench isolation totalionizing dose
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A novel SOI-DTMOS structure from circuit performance considerations
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作者 宋文斌 毕津顺 韩郑生 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2009年第2期34-38,共5页
The performance of a partially depleted silicon-on-insulator (PDSO1) dynamic threshold MOSFET (DT- MOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce t... The performance of a partially depleted silicon-on-insulator (PDSO1) dynamic threshold MOSFET (DT- MOS) is degraded by the large body capacitance and body resistance. Increasing silicon film thickness can reduce the body resistance greatly, but the body capacitance also increases significantly at the same time. To solve this problem, a novel SOl DTMOSFET structure (drain/source-on-local-insulator structure) is proposed. From ISE simulation, the improvement in delay, obtained by optimizing p-n junction depth and silicon film thickness, is very significant. At the same time, we find that the drive current increases significantly as the thickness of the silicon film increases. Furthermore, only one additional mask is needed to form the local SIMOX, and other fabrication processes are fully compatible with conventional CMOS/SOI technology. 展开更多
关键词 partially depleted silicon-on-insulator dynamic threshold MOSFET body capacitance body resistance silicon film thickness circuit delay
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